A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

The present invention provides a vitreous silica crucible which inhibits a deformation even when used under a high temperature condition for a long time, and a method for manufacturing the same. The vitreous silica crucible comprises: a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein, the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof, a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, and a tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress.

A method of producing high strength shaped alumina by feeding alumina power into an agglomerator having a shaft with mixers able to displace the alumina power along the shaft, spraying a liquid binder onto the alumina power as it is displaced along the shaft to form a shaped alumina, and calcining the shaped alumina. The shaped alumina produced having a loose bulk density of greater than or equal to 1.20 g/ml, a surface area less than 10 m.sup.2/g, impurities of less than 5 ppm of individual metals and less than 9 ppm of impurities in total, and/or crush strength of greater than 12,000 psi.

A dust collecting system for single crystal growth system includes an air compressor, a dust collecting device, a first inert gas source, a rotary pump and a scrubber. The air compressor is fluidly connected to an exit pipe of the single crystal growth system. The exit pipe is used to exhaust unstable dust from the single crystal growth system. The dust collecting device is fluidly connecting to the exit pipe to collect the dust oxide. The first inert gas source is fluidly connected to the exit pipe to blow a first inert gas into the exit pipe to compel the dust oxide toward the dust collecting device. The rotary pump is fluidly connected to the dust collecting device. The scrubber is fluidly connected to the rotary pump. The rotary pump transports the residual dust oxide toward the scrubber. The present disclosure further provides a method for collecting dust.

A dust collecting system for single crystal growth system includes an air compressor, a dust collecting device, a first inert gas source, a rotary pump and a scrubber. The air compressor is fluidly connected to an exit pipe of the single crystal growth system. The exit pipe is used to exhaust unstable dust from the single crystal growth system. The dust collecting device is fluidly connecting to the exit pipe to collect the dust oxide. The first inert gas source is fluidly connected to the exit pipe to blow a first inert gas into the exit pipe to compel the dust oxide toward the dust collecting device. The rotary pump is fluidly connected to the dust collecting device. The scrubber is fluidly connected to the rotary pump. The rotary pump transports the residual dust oxide toward the scrubber. The present disclosure further provides a method for collecting dust.

A cleaning device for cleaning the inside of a monocrystal pulling apparatus includes a main tube part that is capable of being inserted into a pull chamber and a wire cleaning mechanism that is provided at an upper portion of the main tube part and is configured to clean a pulling wire to be inserted into the main tube part. The main tube part includes a continuous extension mechanism that adds together and joins a plurality of joint tube parts in an axial direction and allows the plurality of joint tube parts to be sealed and connected to each other. Accordingly, the cleaning device is configured to efficiently clean the wire by preventing powdery dust from adhering thereto again.

A vapor phase growth apparatus of an embodiment includes: a reactor; a first gas chamber provided above the reactor, a first process gas being introduced into the first gas chamber; a plurality of first gas conduits for supplying the first process gas from the first gas chamber to the reactor, each of the first gas conduits having a predetermined length; and a first adjustment conduit inserted to an upper side of one of the plurality of first gas conduits. The first adjustment conduit has as annular protrusion provided on an outer periphery of an upper end portion and is removable from the first gas conduit.

A vapor phase growth apparatus of an embodiment includes: a reactor; a first gas chamber provided above the reactor, a first process gas being introduced into the first gas chamber; a plurality of first gas conduits for supplying the first process gas from the first gas chamber to the reactor, each of the first gas conduits having a predetermined length; and a first adjustment conduit inserted to an upper side of one of the plurality of first gas conduits. The first adjustment conduit has as annular protrusion provided on an outer periphery of an upper end portion and is removable from the first gas conduit.

A sputtering equipment configured to grow a gallium oxide film on a substrate is proposed, and the sputtering equipment may include: a chamber; a stage located in the chamber and configured to secure the substrate thereon; a gallium target located in the chamber and including gallium elements; a first power supply configured to apply voltage to the gallium target; and an oxygen element supplier configured to supply oxygen elements into the chamber.