An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.

A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

The invention relates to a crystal growing unit comprising a crucible for producing and/or enlarging a single crystal. The crystal growing unit has a first thermal insulation with a first thermal conductivity and a second thermal insulation with a second thermal conductivity. The crucible has a crucible base, a crucible side wall and a crucible cover. The crucible side wall is indirectly or directly surrounded by the first thermal insulation. The second thermal insulation is arranged indirectly or directly above the crucible cover. The second thermal conductivity is greater than the first thermal conductivity.

A device for cleaning the inside of a monocrystalline pulling apparatus includes a main tube unit to be inserted into a pull chamber and an inner surface cleaning mechanism that is provided at an upper part of the main tube unit and cleans the inner surface of the pull chamber. The main tube unit includes a retreat/housing section into which a seed chuck provided at the lower end of a wire retreats and which houses the seed chuck therein, and a continuous extension mechanism that is provided at the lower part of the main tube unit and to which a plurality of extension rods are capable of being added and joined. Accordingly, the inner surface of the pull chamber is efficiently cleaned.

A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.

In a method of producing a SiC single crystal ingot of the present invention, in a lower part of a crucible, a high thermal conductivity raw material layer containing a high thermal conductivity raw material and a low thermal conductivity raw material layer containing a low thermal conductivity raw material in at least one of a position above or below the high thermal conductivity raw material layer are disposed to form a raw material part, and heating is performed so that the raw material part reaches the maximum temperature in the high thermal conductivity raw material layer and a SiC single crystal ingot is grown.

A die for growing a single crystal by an Edge-defined Film-fed Growth (EFG) technique includes a first outer die plate; a second outer die plate; and at least one central die plate positioned between the first outer die plate and the second outer die plate such that at least two capillaries are formed between the first outer die plate and the second outer die plate. First ends of the first outer die plate and the second outer die plate have a slope extending away from at least one of the at least two capillaries to form a growth interface at a top of the die. Second ends of the first outer die plate and the second outer die plate are immersed in a raw material melt provided in a crucible. The raw material melt is configured to travel to the growth interface by capillary flow of the raw material melt through the at least two capillaries.

Aspects of the present disclosure generally relate to oscillating a boundary layer of a flow of process gas in methods and systems for processing substrates. In one aspect, one or more of a pressure, a gas flow rate, and/or a height of a substrate are oscillated during processing. In one implementation, a method of processing a substrate includes conducting a processing operation on the substrate in an interior volume of a processing chamber. The conducting the processing operation on the substrate includes moving a flow of one or more process gases over a surface of the substrate. The method also includes oscillating a boundary layer of the flow of one or more process gases while the flow of one or more process gases moves over the surface of the substrate.

The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are distinct and independent from one another; the reactor (100) further comprises a shielding assembly (140) adapted to limit electromagnetic coupling between the first and the second inductors (131, 132).