A sintering and debinding system includes a debinding chamber configured to switch between an open state and a closed state, the open state being configured to permit receipt or removal of at least one part within or from the debinding chamber and a sintering chamber operably connected to the debinding chamber and being vertically positioned above or below the debinding chamber. The sintering system also includes a shelf structure configured to receive the at least one part, the shelf structure being movable between the debinding chamber and the sintering chamber and a gate valve configured to switch between an open state and a closed state, the gate valve being configured to selectively permit or block fluid communication between the debinding chamber and the sintering chamber. The gate valve is configured such that: when the gate valve is in an open state, fluid communication between the debinding chamber and the sintering chamber is permitted and the shelf structure is movable between the debinding chamber and the sintering chamber. The gate valve is further configured such that, when the gate valve is in the closed state, fluid communication between the debinding chamber and sintering chamber is restricted, and at least one of: (i) movement of the shelf structure between the debinding chamber and the sintering chamber is restricted or (ii) the debinding chamber is configured to permit receipt within and removal of the at least one part from the debinding chamber.

The inventive concept provides an apparatus for treating a substrate by using a supercritical fluid. In an embodiment, the apparatus may include a process chamber that provides a treatment space, and including a chamber heater that increases a temperature of an interior of the treatment space, a substrate support provided in the treatment space and that supports the substrate, and a substrate heating member that heats a lower surface of the substrate while contacting the lower surface of the substrate.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

A method for heating ware in a kiln. The ware space of the kiln includes a plurality of temperature control zones oriented in a first direction, and a plurality of temperature control zones oriented in a second direction. The method includes heating the ware space in a first heating stage, a second heating stage, and a third heating stage. At least one of the following conditions is satisfied: (i) in one of the heating stages, a temperature control zone oriented in the first direction has a setpoint temperature that is different from a setpoint temperature of one other temperature control zone oriented in the first direction; and (ii) in one of the heating stages, one temperature control zone oriented in the second direction has a setpoint temperature that is different from a set point temperature of one other temperature control zone oriented in the second direction, wherein the first direction is a vertical direction and the second direction is a horizontal direction.

A method for heating ware in a kiln. The ware space of the kiln includes a plurality of temperature control zones oriented in a first direction, and a plurality of temperature control zones oriented in a second direction. The method includes heating the ware space in a first heating stage, a second heating stage, and a third heating stage. At least one of the following conditions is satisfied: (i) in one of the heating stages, a temperature control zone oriented in the first direction has a setpoint temperature that is different from a setpoint temperature of one other temperature control zone oriented in the first direction; and (ii) in one of the heating stages, one temperature control zone oriented in the second direction has a setpoint temperature that is different from a setpoint temperature of one other temperature control zone oriented in the second direction.

A semiconductor processing tool is disclosed, the tool having a frame forming at least one chamber with an opening and having a sealing surface around a periphery of the opening, a door configured to interact with the sealing surface for sealing the opening, the door having sides perpendicular to the door sealing surface and perpendicular to a transfer plane of a substrate, and at least one drive located on the frame to a side of at least one of the sides that are substantially perpendicular to the door sealing surface and substantially perpendicular to the transfer plane of the substrate, the drive having actuators located at least partially in front of the sealing surface and the actuators being coupled to one of the sides of the door for moving the door from a sealed position. The at least one drive is located outside of a substrate transfer zone.

An oven system includes an oven chamber defined by side walls and a top wall. The oven chamber includes a slot formed in the top wall. A conveyor rail extends longitudinally along the slot at a position outside of the oven chamber. A conveyor hanger is coupled to and movable along the conveyor rail to support a material within the oven chamber. A first support bracket and a second support bracket each extend longitudinally along a length of the top wall of the oven chamber. The second support bracket is spaced from the first support bracket to define the slot that extends longitudinally along the top wall of the oven chamber. A closure mechanism is coupled to the first and second support brackets to inhibit heat from releasing out of the oven chamber.

There is provided a technique for suppressing interference between processes respectively performed in the plurality of reactors. According to one aspect thereof, a substrate processing apparatus includes: a first vessel including a transfer port and a process chamber; a second vessel adjacent to the first vessel and communicating with the first vessel via the transfer port; a lid for closing the transfer port; a seal arranged between the transfer port and the lid; and a controller for controlling the inner pressure of the first vessel to be lower than the inner pressure of the second vessel with the transfer port closed by the lid while the substrate is processed in the process chamber and the inner pressure of the first vessel to be higher than the inner pressure of the second vessel after the substrate is processed and before the first vessel comes into communication with the second vessel.

A method and system for doping semiconductor materials using microwave exposure. In some embodiments, the surface of a semiconductor substrate coated with a layer of dopant material is exposed to a beam of microwave radiation, with the frequency of the microwave radiation chosen to coincide with a microwave absorption resonance of the dopant. A gyrotron is a preferred source of monochromatic microwaves capable of delivering the appropriate the power density. Under this microwave exposure, the dopant heats up and diffuses into the semiconductor. Since only the dopant is selectively excited, the atoms of the crystal lattice remain cooler. Additional cooling can be provided by a flow of cooling gas onto the surface. When the electric field of the microwave exposure is high enough to overcome the potential barrier of interstitial diffusion within the crystal, the dopants migrate to vacancies in the crystal lattice, and the semiconductor material becomes activated.