A plurality of flash lamps are disposed on an upper side of a chamber housing a semiconductor wafer and a plurality of LED lamps are disposed on a lower side thereof. A surface of a semiconductor wafer preheated by light irradiation from a plurality of LED lamps is irradiated with a flash of light from a flash lamp. The LED lamps emit light having a wavelength of 900 nm or less. The light radiated from the LED lamps passes through a quartz lower chamber window, and then emitted to the semiconductor wafer. The light with the wavelength of 900 nm or less radiated from the LED lamps is also favorably absorbed by the semiconductor wafer in a low temperature range of 500° C. or less, and is hardly absorbed by the quartz lower chamber window. Thus, the semiconductor wafer can be efficiently heated by the LED lamps.

In a system and method for producing submicron sized particles from a substance, the system may comprise a constant current power supply, a furnace for vaporizing the substance having a chamber for containing the substance, and a condensation unit for rapid cooling of the vaporized substance. The furnace may comprise an insulating outer section, a chamber wall, and two electrodes.

Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

A substrate processing apparatus includes: a rotary table provided in a processing container; a stage provided on the rotary table to place a substrate thereon, and configured to revolve by a rotation of the rotary table; a heater configured to heat the substrate placed on the stage; and a rotation shaft configured to rotate together with the rotary table and support the stage to be rotatable; and a deflector configured to deflect heating light emitted from the heater toward the rotation shaft.

A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

The invention relates to a method for producing pellets which are capable of providing free flowing powder suitable for firing an industrial furnace from municipal and/or other waste, the process comprising the following steps: (i) providing waste material comprising one or more thermoplastic material(s) of more than 40%, based on the total dry weight of the waste and one or more cellulosic material(s) of more than 30%, based on the total dry weight of the waste, wherein the waste has a particle size distribution with more than 80% larger than 5 mm, more than 95% smaller than 60 mm, (ii) subjecting the waste material through a pelletiser with holes between 4-16 mm and a length ratio of more than 2, and subjecting the pellets through a second pelletiser with holes between 4 and 10 mm, and a length ratio of more than 2 to provide pellets with a diameter between 4 and 10 mm, and a length of between 3 and 50 mm. The invention also relates to pellets obtained and having advantageous properties.

There is provided a technique capable of shortening a temperature stabilization time in a process chamber by improving a heat insulation performance of a lower portion of the process chamber. A heat insulation structure is arranged in a vicinity of a furnace opening of a heat treatment furnace wherein a temperature gradient is formed at the vicinity of the furnace opening. The heat insulation structure includes a plurality of heat insulation plates with predetermined gaps therebetween. Each heat insulation plate includes a heat shield made of metal; and a seal made of quartz or ceramics and configured to cover a front surface and a rear surface of the heat shield. The heat shield is arranged in a vacuum cavity provided in the seal.

An apparatus for treating a substrate are provided. The apparatus includes a chamber having a treatment space therein, a substrate support unit to support the substrate in the treatment space, and a heater unit to heat the substrate supported by the substrate support unit. The substrate support unit includes a support plate having a seating surface, a support protrusion provided to protrude from the seating plate and to directly support the substrate, and a sensor provided to the support protrusion to measure a temperature of the substrate.

Substrate treating equipment includes a first process chamber group including a plurality of process chambers, each of which includes a laser beam emitting unit that applies a laser beam to a substrate to heat the substrate, one laser beam generator that generates the laser beam applied to the substrate through the laser beam emitting unit of each of the plurality of process chambers included in the first process chamber group, and a beam shifting module including one or more mirrors corresponsable to the plurality of process chambers included in the first process chamber group. Each of the one or more mirrors is shifted to a position in which the mirror forms an optical path of the laser beam toward a predetermined one of the plurality of process chambers.