F27B17/00

SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING SYSTEM COMPRISING THE SAME

A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

Hot Air Flow Direction Control Mechanism of Base Board Baking Machine
20220090863 · 2022-03-24 ·

A hot air flow direction control mechanism of a base board baking machine includes a stand, a controller, a housing, a hot air device, an air suction unit, and a top cover. Thus, the hot air device blows the hot air into the housing, and the air suction unit sucks the hot air so that the hot air is circulated evenly in the housing and around the periphery of the housing.

SEMICONDUCTOR BURN-IN OVEN CHAMBER SEALING
20220082611 · 2022-03-17 ·

A semiconductor burn-in oven includes a housing including a burn-in chamber and an opening to the burn-in chamber surrounded by a front face, a heating device, testing circuitry, a door and a sealing mechanism. The door has an open position, in which the burn-in chamber is accessible through the opening, and a closed position, in which the door covers the opening. The sealing mechanism is configured to form a seal around the opening between an interior side of the door and the front face when the door is in the closed position. The sealing mechanism includes at least one sealing member having a recessed position, in which a gap extends between the front face and the interior side of the door, and a sealing position, in which the at least one sealing member closes the gap and forms the seal.

ADAPTIVE BAKING METHOD

A controller includes a non-transitory computer readable medium configured to store information related to a target temperature of a wafer, a target temperature of a heating element, a temperature of the wafer, and a temperature of the heating element. The controller further includes a processor connected to the non-transitory computer readable medium, the processor configured to generate at least one heating signal during a baking process to adjust a duration of an entirety of the baking process in response to the temperature of the wafer and the temperature of the heating element.

SYSTEMS AND METHODS FOR SEGREGATING AND GRINDING OXIDIZABLE CATALYST MATERIAL
20220074589 · 2022-03-10 · ·

A method of disposing of a mixture of oxidizable catalyst material and inert support media. The method comprises introducing inert gas into an enclosure; introducing the mixture into the enclosure; separating the oxidizable catalyst material and the inert support media within the enclosure; maintaining an inert gas environment around the oxidizable catalyst material during separating; exporting the separated inert support media from the enclosure; and grinding the separated oxidizable catalyst material into a powder for disposal as hazardous waste via incineration.

Method of manufacturing semiconductor device, method of controlling temperature and non-transitory computer-readable recording medium

There is provided a technique that includes (a) acquiring temperature data of at least one of a heater temperature defined by a temperature of a heater and a furnace temperature defined by an inner temperature of a process chamber, and acquiring a power supply value indicating an electric power supplied to the heater; (b) acquiring a reference temperature of the temperature data; (c) creating a predetermined equation using a prediction model of estimating a predicted temperature of the temperature data; (d) calculating a solution of minimizing a deviation between the reference temperature and the predicted temperature based on the predetermined equation; and (e) outputting a calculated power supply value calculated from the solution, and processing a substrate while controlling heating of the heater based on the calculated power supply value.

TRANSMITTING AND DETECTING LIGHT WITH OPTICAL FIBER DURING SINTERING

In an example implementation, a sintering system includes optical fiber installed into a sintering furnace. A support structure inside the furnace is to support a token green object in a predetermined position and to hold a distal end of the fiber adjacent to the predetermined position. A light source is operably engaged at a proximal end of the fiber to transmit light through the fiber into the furnace. A light detector is operably engaged at the proximal end of the fiber to receive reflected light through the fiber that scatters off a surface of the token green object.

Flameless Impingement Oven
20210318068 · 2021-10-14 ·

A flameless combustion oven arranges gas and air jets to directly impinge on product, being heated to substantially promote transfer of heat to the product by impingement transfer rather than by conventional radiation and thermally induced convection. In one embodiment, a set of spaced air and gas nozzles are uniformly distributed on a wall of the oven opposite the product to provide substantially uniform impingement over a surface of the product.

CLEANING METHOD AND HEAT TREATMENT APPARATUS
20210310739 · 2021-10-07 ·

A cleaning method introduces a cleaning gas containing hydrogen fluoride into a reaction tube included in a heat treatment apparatus and having a furnace portion at one end in a state where an inside of the reaction tube with the furnace port being closed by a lid is maintained at a temperature at which water exists as a liquid film and the furnace port is locally heated, thereby removing a deposit from the reaction tube.

LIGHT-IRRADIATION HEAT TREATMENT APPARATUS

A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.