The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

A semiconductor burn-in oven includes a housing including a burn-in chamber and an opening to the burn-in chamber surrounded by a front face, a heating device, testing circuitry, a door and a sealing mechanism. The door has an open position, in which the burn-in chamber is accessible through the opening, and a closed position, in which the door covers the opening. The sealing mechanism is configured to form a seal around the opening between an interior side of the door and the front face when the door is in the closed position. The sealing mechanism includes at least one sealing member having a recessed position, in which a gap extends between the front face and the interior side of the door, and a sealing position, in which the at least one sealing member closes the gap and forms the seal.

A wafer baking apparatus includes a chamber including a processing space, and a wafer heater disposed in the processing space and configured to support a wafer. The wafer heater includes a first heating plate, a heating resistance pattern disposed on a lower surface of the first heating plate, a second heating plate disposed on the first heating plate, and a heat dispersion layer interposed between the first and second heating plates and having thermal conductivity lower than a thermal conductivity of materials of the first and second heating plates.

In an example implementation, a sintering system includes optical fiber installed into a sintering furnace. A support structure inside the furnace is to support a token green object in a predetermined position and to hold a distal end of the fiber adjacent to the predetermined position. A light source is operably engaged at a proximal end of the fiber to transmit light through the fiber into the furnace. A light detector is operably engaged at the proximal end of the fiber to receive reflected light through the fiber that scatters off a surface of the token green object.

The invention concerns a method for accentuating the orientation of the grains of a continuous steel sheet (1), in particular for producing electrical sheet steel, said method involving, during the movement of the steel sheet (1) in the longitudinal direction of same, a longitudinal stretching of the steel sheet (1) in a stretch region (1d) in which the steel sheet (1) moves at a temperature of between approximately 750° C. and approximately 900° C. The invention also concerns a device for implementing said method in which the stretching is carried out by two tensioning blocks (41, 42) comprising traction rollers arranged to move and guide the steel sheet (1). The invention further concerns a facility for producing electrical sheet steel comprising a line comprising a rolling mill and on which said method and said device are implemented downstream from the rolling mill.

The invention concerns a method for accentuating the orientation of the grains of a continuous steel sheet (1), in particular for producing electrical sheet steel, said method involving, during the movement of the steel sheet (1) in the longitudinal direction of same, a longitudinal stretching of the steel sheet (1) in a stretch region (1d) in which the steel sheet (1) moves at a temperature of between approximately 750° C. and approximately 900° C. The invention also concerns a device for implementing said method in which the stretching is carried out by two tensioning blocks (41, 42) comprising traction rollers arranged to move and guide the steel sheet (1). The invention further concerns a facility for producing electrical sheet steel comprising a line comprising a rolling mill and on which said method and said device are implemented downstream from the rolling mill.

A ductile iron composition including, by weight: about 3.1% to about 3.6% C; about 3.5% to about 4.0% Si; about 0.035% to about 0.050% Mg; about 0.001% to about 0.004% Ce; up to about 0.005% Sb; about 0.008% to about 0.016% S; up to about 0.04% P; up to about 0.3% Mn; and balance iron and incidental impurities;
The ductile iron composition includes a ratio of Sb/Ce greater than or equal to about 1.25, has a ferritic microstructure and graphite nodules, and greater than about 65% of the graphite nodules having a highly spherical geometry. A method and apparatus for forming a ductile iron composition are also disclosed.

First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

The present disclosure provides a support mechanism for supporting a cover that performs sealing of a furnace opening of a heat treatment furnace or release the sealing by being moved up or down by an elevating unit. The support mechanism includes a first elastic body having a first elastic modulus; and a second elastic body having a second elastic modulus larger than the first elastic modulus. A reaction force in relation to the first elastic body is applied to the cover when the cover abuts on the furnace opening by being moved up by the elevating unit, and a reaction force in relation to the first elastic body and the second elastic body is applied to the cover after the cover abuts on the furnace opening by being moved up by the elevating unit.

Disclosed is a vertical heat treatment apparatus. The apparatus includes: a heat treatment furnace provided with a furnace inlet at a lower end thereof; a cover unit disposed on the furnace inlet of the heat treatment furnace; a cover unit opening/closing mechanism configured to support the cover unit in a cantilever manner from a bottom side of the cover unit; and an auxiliary mechanism configured to press the cover unit from the bottom side of the cover unit when the cover unit is disposed on the furnace inlet. The auxiliary mechanism is provided with a toggle mechanism.