A DC plasma arc furnace, a method of co-processing waste and metal, a method of producing energy by processing material using the furnace, and the products produced by the furnace are provided. Metal may be efficiently processed by the furnace via an increased organic content in other feedstock fed into the furnace.

A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

Substrate treating equipment includes a first process chamber group including a plurality of process chambers, each of which includes a laser beam emitting unit that applies a laser beam to a substrate to heat the substrate, one laser beam generator that generates the laser beam applied to the substrate through the laser beam emitting unit of each of the plurality of process chambers included in the first process chamber group, and a beam shifting module including one or more mirrors corresponsable to the plurality of process chambers included in the first process chamber group. Each of the one or more mirrors is shifted to a position in which the mirror forms an optical path of the laser beam toward a predetermined one of the plurality of process chambers.

A process chamber includes one or more vertical walls at least partially defining a chamber portion of the process chamber, and multiple zones located about a periphery of the one or more vertical walls, wherein one or more of the multiple zones extends from a top to a bottom of the one or more vertical walls. The process chamber further includes a plurality of temperature control devices, each thermally coupled to the one or more vertical walls in one of the multiple zones, and a controller coupled to the plurality of temperature control devices and configured to set temperatures of one or more of the plurality of temperature control devices to obtain temperature uniformity within 2% across a substrate located in the chamber portion.

Provided is a hot isostatic pressing (HIP) device that improves the heat uniformity of a hot zone during a pressurization process of an object being processed. This HIP device (100) is provided with: an outer casing (4) having an open outer opening part (4H); an inner casing (5) having an open inn opening part (5H); a heat-insulating body (R) disposed between the outer casing (4) and the inner casing (5); a gas flow generation part (30); and a plurality of first gas conduits (12), A hot zone (P) in which a pressurization process is performed is formed inside the inner casing (5). During the pressurization process, a low-temperature pressurization medium gas which has been generated by the gas flow generation part (30) and has passed through the first gas conduits (12) moves upward in an inner flow passage (L1) between the casings, and then flows into the hot zone (P) from the inner opening part (5H), Even when the pressurization medium gas leaks from the vicinity of a bottom all part (20) and flows into the hot zone (P), the heat uniformity of the hot zone (P) is maintained.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

A thermoelectric element can comprise a thermoelectric body, a first contact, and a second contact structure, wherein the first and/or second contact structure can comprise at least one porous metal structure embedded within an outer region of the thermoelectric body, and at least one metal layer overlying the outer region of the thermoelectric body and being in direct contact with the embedded porous metal structure. A method of making the thermoelectric element can include embedding the at least one porous metal structure within the outer region of the thermoelectric body by induction heating, followed by electroplating of the at least one metal layer.

A thermoelectric element can comprise a thermoelectric body, a first contact, and a second contact structure, wherein the first and/or second contact structure can comprise at least one porous metal structure embedded within an outer region of the thermoelectric body, and at least one metal layer overlying the outer region of the thermoelectric body and being in direct contact with the embedded porous metal structure. A method of making the thermoelectric element can include embedding the at least one porous metal structure within the outer region of the thermoelectric body by induction heating, followed by electroplating of the at least one metal layer.

An induction heating system can comprise a furnace chamber comprising a non-magnetic and non-conductive furnace wall; at least one induction heating coil surrounding an outer side of the furnace wall in a length direction (z) of the furnace chamber; and a holding and pressing construction. The holding and pressing construction can be designed to hold an arrangement to be placed within the furnace chamber, and the holding and pressing construction can apply a pressure on a proximal end and a distal end of the arrangement in the length direction of the chamber.

A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.