Patent classifications
F27D5/00
Method and system for doping semiconductor materials
A method and system for doping semiconductor materials using microwave exposure. In some embodiments, the surface of a semiconductor substrate coated with a layer of dopant material is exposed to a beam of microwave radiation, with the frequency of the microwave radiation chosen to coincide with a microwave absorption resonance of the dopant. A gyrotron is a preferred source of monochromatic microwaves capable of delivering the appropriate the power density. Under this microwave exposure, the dopant heats up and diffuses into the semiconductor. Since only the dopant is selectively excited, the atoms of the crystal lattice remain cooler. Additional cooling can be provided by a flow of cooling gas onto the surface. When the electric field of the microwave exposure is high enough to overcome the potential barrier of interstitial diffusion within the crystal, the dopants migrate to vacancies in the crystal lattice, and the semiconductor material becomes activated.
Substrate processing apparatus, substrate processing method, and storage medium
A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.
Portable carrier device for a furnace charge and handling system for the carrier device
The present invention relates to a device for carrying component parts to be temperature-controlled, in particular coiled metal strips or metal wires, in a temperature-control device. The carrier device has a base body and a carrier element, to which a component part is attachable, wherein the carrier element is detachably attached to the base body. The base body has a transport coupling, which is configured such that the transport coupling is detachably fixable to a handling system for handling the device.
SPOT HEATING BY MOVING A BEAM WITH HORIZONTAL ROTARY MOTION
Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.
Substrate processing apparatus and method
A substrate processing apparatus, comprising a substrate support (32) provided with a support surface (34) for supporting a substrate or a substrate carrier (24) thereon and a support heater (50) constructed and arranged to heat the support surface (34). The apparatus comprises a heat shield constructed and arranged to cover and shield the substrate support (32) when no substrate or substrate carrier (24) is on the support surface.
Sagger for firing secondary battery active material and method for manufacturing secondary battery active material using same
A sagger for firing an object to be fired includes an active material for a secondary battery. Carbon dioxide that is a reaction by-product produced during a positive electrode active material firing process can be smoothly discharged from the sagger, and such a smooth discharge of carbon dioxide can lower a residual lithium concentration of a positive electrode active material and thus can improve dispersibility of a positive electrode active material slurry and also improve capacity of a battery.
Shielding and differentiating receiver for radiant heating processes
A receiver is formed as the physical inverse or relief of at least a portion of a machined part or casting. The receiver has accommodations for sensor systems that monitor the temperature of the part during a radiant heating process which is placed on top of the casting receiver to move through the radiant heating process.
Shielding and differentiating receiver for radiant heating processes
A receiver is formed as the physical inverse or relief of at least a portion of a machined part or casting. The receiver has accommodations for sensor systems that monitor the temperature of the part during a radiant heating process which is placed on top of the casting receiver to move through the radiant heating process.
Vacuum Forming Method
A method for forming large titanium parts includes forming bends into a titanium plate for form a bent part. The bent part is then roll-formed to form contours into the bent part. The surfaces of the contoured part are rough-machined, and the part is then secured to a bladed form fixture. The bladed form fixture comprises a plurality of header boards that secure the part to the fixture. The fixture part is placed in a thermal vacuum furnace and a stress-relieving operation is performed. The part is removed from the fixture and final machining takes place.
Vacuum Forming Method
A method for forming large titanium parts includes forming bends into a titanium plate for form a bent part. The bent part is then roll-formed to form contours into the bent part. The surfaces of the contoured part are rough-machined, and the part is then secured to a bladed form fixture. The bladed form fixture comprises a plurality of header boards that secure the part to the fixture. The fixture part is placed in a thermal vacuum furnace and a stress-relieving operation is performed. The part is removed from the fixture and final machining takes place.