The present application provides a baking equipment applied in a display panel manufacturing process. In the present application, the first and second pipes are communicated with each other and evenly distributed inside the baking plate, so that the heating liquid injected from the head end of the first pipe heats the baking plate evenly during flowing through the first and second pipes, which improves the uniformity of the baking temperature of the TFT array substrate to be baked by the baking plate, thereby ensuring the stability of the baking process of the TFT array substrate.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

A method for forming large titanium parts includes forming bends into a titanium plate for form a bent part. The bent part is then roll-formed to form contours into the bent part. The surfaces of the contoured part are rough-machined, and the part is then secured to a bladed form fixture. The bladed form fixture comprises a plurality of header boards that secure the part to the fixture. The fixture part is placed in a thermal vacuum furnace and a stress-relieving operation is performed. The part is removed from the fixture and final machining takes place.

A method for forming large titanium parts includes forming bends into a titanium plate for form a bent part. The bent part is then roll-formed to form contours into the bent part. The surfaces of the contoured part are rough-machined, and the part is then secured to a bladed form fixture. The bladed form fixture comprises a plurality of header boards that secure the part to the fixture. The fixture part is placed in a thermal vacuum furnace and a stress-relieving operation is performed. The part is removed from the fixture and final machining takes place.

A support tooling for porous preforms intended to be infiltrated by a molten metal includes a rack including two suspension bars each extending longitudinally along a first direction, the suspension bars being held spaced apart from one another along a second direction perpendicular to the first direction; a plurality or porous preform supports removably mounted on the suspension bars, each support including a first portion connected to one of the suspension bars by a connection sliding along a third direction perpendicular to the first and second directions and a second portion extending from the first portion and including support elements which are able to hold a porous preform by point or linear contact.

A support tooling for porous preforms intended to be infiltrated by a molten metal includes a rack including two suspension bars each extending longitudinally along a first direction, the suspension bars being held spaced apart from one another along a second direction perpendicular to the first direction; a plurality or porous preform supports removably mounted on the suspension bars, each support including a first portion connected to one of the suspension bars by a connection sliding along a third direction perpendicular to the first and second directions and a second portion extending from the first portion and including support elements which are able to hold a porous preform by point or linear contact.

A high-temperature forming device for imperfect single-crystal wafers used for a neutron monochromator includes a heating electric furnace, a temperature control system, a die system, a loading system, a vacuum protection system, and an auxiliary system. Where a furnace mouth of the heating electric furnace faces downwards, the heating electric furnace can be lifted vertically or a hearth of the heating electric furnace can be opened and closed. A vacuum protection cavity is formed by a glass cover and a blocking flange, a through hole is formed in one end of the glass cover, and the other end of the glass cover is closed. An operation opening is formed in the glass cover, the die system includes an upper die, a middle die, and a lower die, the middle die is a composite die.

A refractory article having a support structure including a first plurality of posts coupled by a first member; and a second plurality of posts substantially parallel with the first plurality of posts, the second plurality of posts coupled by a second member, wherein the support structure has a height, H, and wherein the first and second members are positioned between 0.3H and 0.7H. In another aspect, the support structure has a height to width ratio of at least 1.5, a stiffness factor of no greater than 100 mm, and a solid to open volume ratio of no greater than 5%. In another aspect, the support structure has a weight of no greater than 1200 kg, a stiffness factor of no greater than 100 mm, and a solid to open volume ratio of no greater than 5%.

A refractory article having a support structure including a first plurality of posts coupled by a first member; and a second plurality of posts substantially parallel with the first plurality of posts, the second plurality of posts coupled by a second member, wherein the support structure has a height, H, and wherein the first and second members are positioned between 0.3H and 0.7H. In another aspect, the support structure has a height to width ratio of at least 1.5, a stiffness factor of no greater than 100 mm, and a solid to open volume ratio of no greater than 5%. In another aspect, the support structure has a weight of no greater than 1200 kg, a stiffness factor of no greater than 100 mm, and a solid to open volume ratio of no greater than 5%.