One or more embodiments of a burner panel for a metallurgical furnace is described herein. The burner panel has a body having a top surface, a bottom surface, a left surface, a right surface, and a front surface surrounding an interior burner area. A spray-cool system disposed in the interior area. A burner tube at least partially disposed in the interior burner area and extends into the front surface. The burner tube is configured to accept a burner.

A method and system for doping semiconductor materials using microwave exposure. In some embodiments, the surface of a semiconductor substrate coated with a layer of dopant material is exposed to a beam of microwave radiation, with the frequency of the microwave radiation chosen to coincide with a microwave absorption resonance of the dopant. A gyrotron is a preferred source of monochromatic microwaves capable of delivering the appropriate the power density. Under this microwave exposure, the dopant heats up and diffuses into the semiconductor. Since only the dopant is selectively excited, the atoms of the crystal lattice remain cooler. Additional cooling can be provided by a flow of cooling gas onto the surface. When the electric field of the microwave exposure is high enough to overcome the potential barrier of interstitial diffusion within the crystal, the dopants migrate to vacancies in the crystal lattice, and the semiconductor material becomes activated.

A method and system for doping semiconductor materials using microwave exposure. In some embodiments, the surface of a semiconductor substrate coated with a layer of dopant material is exposed to a beam of microwave radiation, with the frequency of the microwave radiation chosen to coincide with a microwave absorption resonance of the dopant. A gyrotron is a preferred source of monochromatic microwaves capable of delivering the appropriate the power density. Under this microwave exposure, the dopant heats up and diffuses into the semiconductor. Since only the dopant is selectively excited, the atoms of the crystal lattice remain cooler. Additional cooling can be provided by a flow of cooling gas onto the surface. When the electric field of the microwave exposure is high enough to overcome the potential barrier of interstitial diffusion within the crystal, the dopants migrate to vacancies in the crystal lattice, and the semiconductor material becomes activated.

A graphitization furnace with a rapid active cooling system is disclosed, including a furnace body and an active cooling system. The active cooling system is provided with at least one medium loop unit and a control unit for controlling a flow velocity of a medium in the medium loop unit, each medium loop unit includes a plurality of heat removal pipes pre-embedded in a furnace cavity of the furnace body, and each heat removal pipe is provided with a medium flow channel communicated with the medium loop unit. The graphitization furnace with a rapid active cooling system can realize rapid active cooling, short turnover time and high energy utilization efficiency of the graphitization furnace, and has wide applicability, which is not only suitable for construction of a new graphitization furnace, but also suitable for transformation of the existing Acheson graphitization furnace.

A graphitization furnace with a rapid active cooling system is disclosed, including a furnace body and an active cooling system. The active cooling system is provided with at least one medium loop unit and a control unit for controlling a flow velocity of a medium in the medium loop unit, each medium loop unit includes a plurality of heat removal pipes pre-embedded in a furnace cavity of the furnace body, and each heat removal pipe is provided with a medium flow channel communicated with the medium loop unit. The graphitization furnace with a rapid active cooling system can realize rapid active cooling, short turnover time and high energy utilization efficiency of the graphitization furnace, and has wide applicability, which is not only suitable for construction of a new graphitization furnace, but also suitable for transformation of the existing Acheson graphitization furnace.

A continuous heating furnace including an inlet, a heating zone, a cooling zone and an outlet in this order, for carrying out a heat treatment while conveying at least one workpiece from the inlet to the outlet, wherein the cooling zone is configured such that an ambient gas for direct cooling of the workpiece can flow into the cooling zone from the outlet; the cooling zone includes a plurality of indirect coolers arranged in parallel in the conveying direction of the workpiece, each of the indirect coolers having at least one regulator for independently adjusting a cooling power; and the cooling zone includes one or more residual heat outlets for discharging a residual heat gas in the cooling zone.

A blast furnace for ironmaking production wherein iron ore is at least partly reduced by a reducing gas which is injected in the stack of the blast furnace. The blast furnace includes an external wall, an internal wall in contact with matters charged into the blast furnace, the internal wall including several rows of staves having a parallelepipedal shape. At least one row of staves comprises staves with a hole drilled in a least one of the corners of the parallelepipedal stave wherein an injection device may be partly inserted in.

A hood-type annealing furnace has a base, which has a site on which a batch of a annealing material can be arranged. The annealing material arranged on the site can be covered by a protective hood, which forms an annealing space enclosed by the protective hood and the site. The protective hood can be covered by a heating hood, thereby forming an intermediate space arranged between the heating hood and the protective hood and bounded at the bottom by the base. A cooling gas system is communicably connected or connectable to the intermediate space. The cooling gas system is communicably connected or connectable to the intermediate space, to a cooling gas outlet formed on the base and communicably connected to the intermediate space, and at least one cooling gas inlet formed on the base and communicably connected to the intermediate space.

A hood-type annealing furnace has a base, which has a site on which a batch of a annealing material can be arranged. The annealing material arranged on the site can be covered by a protective hood, which forms an annealing space enclosed by the protective hood and the site. The protective hood can be covered by a heating hood, thereby forming an intermediate space arranged between the heating hood and the protective hood and bounded at the bottom by the base. A cooling gas system is communicably connected or connectable to the intermediate space. The cooling gas system is communicably connected or connectable to the intermediate space, to a cooling gas outlet formed on the base and communicably connected to the intermediate space, and at least one cooling gas inlet formed on the base and communicably connected to the intermediate space.

A heat treatment device includes a chamber accommodating a work substrate including a first organic layer, a heater part which is disposed in the chamber and heats the work substrate, an air supply part including a first nozzle which supplies an external air to the chamber, a second nozzle which is disposed in the first nozzle and supplies a process gas to the chamber, and a cover part provided through which an opening overlapping the second nozzle is defined and which is disposed at an end of the first nozzle, which is adjacent to an outlet of the first nozzle, and an air exhaust part exhausting particles in the chamber to an outside of the chamber.