A system for heat treating a part includes an oven chamber, a first infrared (IR) emitter configured to deliver a first amount of IR energy to a first region of the part, a second IR emitter configured to deliver a second amount of IR energy different from the first amount of energy to a second region of the part, and a receiver with an outer surface configured to contact a second surface of the part and shield the second surface of the part from infrared radiation. The part can be heat treated by delivering different amounts of IR energy to the first and second regions of the part. The system can be used to heat treat different thicknesses of a part without overheating a thinner region, or to apply different heat treatments to the different regions.

A system for heat treating a part includes an oven chamber, a first infrared (IR) emitter configured to deliver a first amount of IR energy to a first region of the part, a second IR emitter configured to deliver a second amount of IR energy different from the first amount of energy to a second region of the part, and a receiver with an outer surface configured to contact a second surface of the part and shield the second surface of the part from infrared radiation. The part can be heat treated by delivering different amounts of IR energy to the first and second regions of the part. The system can be used to heat treat different thicknesses of a part without overheating a thinner region, or to apply different heat treatments to the different regions.

A hydrogen-plasma rotary kiln furnace reactor and a method of reducing iron ore to iron using the same are disclosed. The hydrogen-plasma rotary kiln furnace includes a rotary kiln furnace and a hydrogen-plasma generator.

A hydrogen-plasma rotary kiln furnace reactor and a method of reducing iron ore to iron using the same are disclosed. The hydrogen-plasma rotary kiln furnace includes a rotary kiln furnace and a hydrogen-plasma generator.

A modular industrial energy transfer system includes a shell and at least one energy transfer unit coupled to the shell. The shell includes a plurality of sidewalls, a ceiling member coupled thereto, and a plurality of mounting structures disposed along the shell. The plurality of sidewalls and the ceiling member cooperate to define an interior volume to accommodate a work product. The at least one energy transfer unit is coupled to the shell via at least one of the plurality of mounting structures and is partially disposed through the shell to generate an airflow pattern through the interior volume of the shell.

A modular industrial energy transfer system includes a shell and at least one energy transfer unit coupled to the shell. The shell includes a plurality of sidewalls, a ceiling member coupled thereto, and a plurality of mounting structures disposed along the shell. The plurality of sidewalls and the ceiling member cooperate to define an interior volume to accommodate a work product. The at least one energy transfer unit is coupled to the shell via at least one of the plurality of mounting structures and is partially disposed through the shell to generate an airflow pattern through the interior volume of the shell.

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

One embodiment is directed to an apparatus comprising a firing furnace comprising a heating chamber configured to fire a metallization layer of photovoltaic devices and a cooling chamber configured to cool the photovoltaic devices that have been heated by the heating chamber. The cooling chamber comprises lights to light anneal the photovoltaic devices to reduce light induced degradation as the photovoltaic devices are cooled in the cooling chamber. The cooling chamber of the firing furnace is configured to use residual heat from heating performed in the heating chamber of the firing furnace as heat for the light annealing of the photovoltaic devices. Light annealing is not performed in the heating chamber of the firing furnace.

One embodiment is directed to an apparatus comprising a firing furnace comprising a heating chamber configured to fire a metallization layer of photovoltaic devices and a cooling chamber configured to cool the photovoltaic devices that have been heated by the heating chamber. The cooling chamber comprises lights to light anneal the photovoltaic devices to reduce light induced degradation as the photovoltaic devices are cooled in the cooling chamber. The cooling chamber of the firing furnace is configured to use residual heat from heating performed in the heating chamber of the firing furnace as heat for the light annealing of the photovoltaic devices. Light annealing is not performed in the heating chamber of the firing furnace.