An optical measurement device according to an aspect of the present disclosure includes a universal metasurface on which light is incident, a polarization sensor configured to measure a polarization state of light passing through the universal metasurface, and a controller configured to collect a quantitative differential interference contrast (QDIC) image for the x polarization of incident light that is collected by the polarization sensor, a QDIC image for y polarization, and a quantitative relative phase (QRP) image representing a relative phase difference between the x polarization and y polarization and configured to calculate intensity, a phase or polarization information of the incident light.

A system comprises alight source to provide light, an optical system comprises focusing optics to focus the light onto a focal surface, a detector to measure returning light that is reflected off of a three dimensional object, a translation mechanism to displace the focal surface along an imaging axis defined by the optical path, and one or more processor. The one or more processor is to generate measurement data comprising coordinates of a plurality of surface points of the three dimensional object based on the measured returning light; adjust the coordinates of the subset of the plurality of surface points along up to three axes to correct the measurement data so as to remove inaccuracies caused by changes in magnification at the focal surface; and generate a three dimensional model of the three dimensional object using corrected measurement data.

The present disclosure relates to a solid-state imaging device and an electronic apparatus that make it possible to estimate a normal vector to one direction with high accuracy with a simple configuration. A polarization image sensor includes a plurality of polarizers disposed on a chip and having different polarization directions, and a plurality of photoelectric conversion sections having light reception regions for receiving light transmitted through the polarizers, the light reception regions being symmetrical. The present disclosure can be applied, for example, to a polarization image sensor or the like that estimates a surface and a shape of an imaging object.

The optical device comprises a group of Fabry-Perot resonators, formed by a stack of a first and second partial reflection layer and an intermediate layer between the first and second partial reflection layer. The intermediate layer comprises a dielectric material and a group of arrays of posts embedded in the dielectric material at different positions along the intermediate layer. Each array in the group contains posts of a different non-circular shape and/or orientation in cross-section with a plane parallel to the reflection layers. As a result, Fabry-Perot resonators are formed in areas that contain different arrays, each having first and second resonance peaks at mutually different resonance frequencies for different polarization components. Light intensity sensors may be provided located below the different areas. From the intensities measured by the sensors, the intensities of different polarization components of the light can be computed over a range of wavelengths.

The optical device comprises a group of Fabry-Perot resonators, formed by a stack of a first and second partial reflection layer and an intermediate layer between the first and second partial reflection layer. The intermediate layer comprises a dielectric material and a group of arrays of posts embedded in the dielectric material at different positions along the intermediate layer. Each array in the group contains posts of a different non-circular shape and/or orientation in cross-section with a plane parallel to the reflection layers. As a result, Fabry-Perot resonators are formed in areas that contain different arrays, each having first and second resonance peaks at mutually different resonance frequencies for different polarization components. Light intensity sensors may be provided located below the different areas. From the intensities measured by the sensors, the intensities of different polarization components of the light can be computed over a range of wavelengths.

An ellipsometer includes a focusing system that uses an image of the measurement spot to determine a best focal position for the ellipsometer. The focus signal is produced by splitting off the ellipsometer measurement spot before the signal is analyzed by a polarizer thereby avoiding imagining the spot with a modulated intensity. The focus signal is imaged on a sensor array and based on the position of the spot on the sensor array, the focal position of the ellipsometer may be determined. A single image may be used to determine the focal position of the ellipsometer permitting a real time focus position measurement.

A transition metal dichalcogenides device includes a substrate, a bottom layer of boron nitride, a tungsten diselenide monolayer on the bottom layer of boron nitride, a top layer of boron nitride on the tungsten diselenide monolayer such that the bottom and top layers of boron nitride at least partially encapsulate the tungsten diselenide monolayer, a source electrode on the substrate, a drain electrode on the substrate, and a top gate electrode on the top layer of boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about −17 T to about 17 T.

A transition metal dichalcogenides device includes a substrate, a bottom layer of boron nitride, a tungsten diselenide monolayer on the bottom layer of boron nitride, a top layer of boron nitride on the tungsten diselenide monolayer such that the bottom and top layers of boron nitride at least partially encapsulate the tungsten diselenide monolayer, a source electrode on the substrate, a drain electrode on the substrate, and a top gate electrode on the top layer of boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about −17 T to about 17 T.

A spatial filtering apparatus includes a composite filter including first filter patterns respectively having a first phase profile, and second filter patterns respectively having a second phase profile, wherein the first filter patterns and the second filter patterns overlap with each other, wherein first light in a first polarization direction that is emitted on the composite filter is first spatially filtered by the first filter patterns, and wherein second light in a second polarization direction that is emitted on the composite filter is second spatially filtered by the second filter patterns.

A spatial filtering apparatus includes a composite filter including first filter patterns respectively having a first phase profile, and second filter patterns respectively having a second phase profile, wherein the first filter patterns and the second filter patterns overlap with each other, wherein first light in a first polarization direction that is emitted on the composite filter is first spatially filtered by the first filter patterns, and wherein second light in a second polarization direction that is emitted on the composite filter is second spatially filtered by the second filter patterns.