A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.

A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.

The present disclosure relates to a device for determining and/or monitoring temperature of a liquid, comprising a temperature sensor, a reference element for in-situ calibration and/or validation of a temperature sensor and an electronics unit, wherein the reference element is composed at least partially of a material, in the case of which at least one phase transformation occurs at at least a first predetermined phase transformation temperature in a temperature range relevant for calibrating the temperature sensor, in which phase transformation the material remains in the solid phase. According to the present disclosure, the electronics unit is embodied to supply the reference element with a dynamic excitation signal. Furthermore, the present disclosure relates to a method for calibration and/or validation of a temperature sensor based on a device of the invention.

A stretchable temperature sensor includes one or more elastomeric ionic conducting layers; at least two electronic conducting elements, wherein the one or more ionic conducting layers and one or more electronic conducting elements are configured and arranged to provide at least one electrical double layer at a first contact area between the ionic conducting layer and a first electronic conducting element in a sensing end and at least one electrical double layer at a contact area between the ionic conducting layer and a second electronic conducting element in an open end of the temperature sensor; wherein the second electronic conducting element provides a connection at the open end to an external circuit for measuring a signal generated in response to a temperature condition at the sensing end.

A stretchable temperature sensor includes one or more elastomeric ionic conducting layers; at least two electronic conducting elements, wherein the one or more ionic conducting layers and one or more electronic conducting elements are configured and arranged to provide at least one electrical double layer at a first contact area between the ionic conducting layer and a first electronic conducting element in a sensing end and at least one electrical double layer at a contact area between the ionic conducting layer and a second electronic conducting element in an open end of the temperature sensor; wherein the second electronic conducting element provides a connection at the open end to an external circuit for measuring a signal generated in response to a temperature condition at the sensing end.

The present disclosure relates to an apparatus of measuring a temperature of a battery cell, which may measure temperature values at a plurality of locations through a plurality of temperature sensors arranged at the locations below a water-cooled battery cell module, and thus may identify a temperature difference between an upper portion and a lower portion of a battery cell, which is not visually identified, as well as all temperature values at all locations below the battery cell.

The present disclosure relates to an apparatus of measuring a temperature of a battery cell, which may measure temperature values at a plurality of locations through a plurality of temperature sensors arranged at the locations below a water-cooled battery cell module, and thus may identify a temperature difference between an upper portion and a lower portion of a battery cell, which is not visually identified, as well as all temperature values at all locations below the battery cell.

This application relates to methods and apparatus for temperature monitoring for integrated circuits, and in particular to temperature monitoring using a locked-loop circuits, e.g. FLLs, PLLs or DLLs. According to embodiments a locked-loop circuit includes a controlled signal timing module, wherein the timing properties of an output signal (S.sub.OUT, S.sub.FB) are dependent on a value of a control signal and on temperature. A controller compares a feedback signal (S.sub.FB) output from the timing module to a reference signal (S.sub.REF) and generates a control signal (S.sub.C) to maintain a desired timing relationship. A temperature monitor monitors temperature based on the value of the control signal. For FLLs and PLLs the signal timing module may be a controlled oscillator.

A temperature sensor provided with: an element that comprises a resistor which has a resistance value that changes with temperature thereof, and a lead wire; a signal wire that is bonded to the lead wire by welding; and a cover that covers the element and a welded part between the lead wire and the signal wire, where the lead wire comprises a material in which oxide particles are dispersed in platinum or platinum alloy; and the welded part has a welded part interface region along an interface with the lead wire or the signal wire, and a welded part main region inside thereof, and a volume ratio of the oxide particles occupying the welded part interface region is larger than a volume ratio of the oxide particles occupying the welded part main region.

A thermal sensor with non-ideal coefficient elimination is shown. The thermal sensor has a bandgap circuit, a dual-phase voltage-to-frequency converter, and a frequency meter. The bandgap circuit outputs a temperature-dependent voltage. The dual-phase voltage-to-frequency converter is coupled to the bandgap circuit in the normal phase to perform a voltage-to-frequency conversion based on the temperature-dependent voltage, and is disconnected from the bandgap circuit in the coefficient capturing phase to perform the voltage-to-frequency conversion based on the supply voltage. The frequency meter is coupled to the dual-phase voltage-to-frequency converter to calculate the temperature-dependent frequency corresponding to the normal phase of the dual-phase voltage-to-frequency converter. The frequency meter also calculates the temperature-independent frequency corresponding to the coefficient capturing phase of the dual-phase voltage-to-frequency converter. The temperature-dependent frequency and the temperature-independent frequency are provided for temperature evaluation with non-ideal coefficient elimination.