Temperature measurements of photonic circuit components may be performed optically, exploiting a temperature-dependent spectral property of the photonic device to be monitored itself, or of a separate optical temperature sensor placed in its vicinity. By facilitating measurements of the temperature of the individual photonic devices rather than merely the photonic circuit at large, such optical temperature measurements can provide more accurate temperature information and help improve thermal design.

The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze. The present application increases efficiency and accuracy of temperature detection of the thermal chamber, reduce fluctuations caused by silicon wafer thickness and resistivity, increase utilization of silicon wafer, and reduce cost.

The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze. The present application increases efficiency and accuracy of temperature detection of the thermal chamber, reduce fluctuations caused by silicon wafer thickness and resistivity, increase utilization of silicon wafer, and reduce cost.

A method includes exposing a sample etalon-object to sample incident radiation, resulting in a sample transmitted radiation and sample reflected radiation; exposing a reference etalon-object to reference incident radiation, resulting in a reference transmitted radiation and reference reflected radiation; and analyzing resultant radiation for a heterodyned spectrum. The sample transmitted radiation may become the reference incident radiation, and the reference transmitted radiation may become the resultant radiation. The reference transmitted radiation may become the sample incident radiation, and the sample transmitted radiation may become the resultant radiation. The sample transmitted radiation may become the reference incident radiation, and the reference reflected radiation may become the resultant radiation. The reference transmitted radiation may become the sample incident radiation, and the sample reflected radiation may become the resultant radiation.

A method includes exposing a sample etalon-object to sample incident radiation, resulting in a sample transmitted radiation and sample reflected radiation; exposing a reference etalon-object to reference incident radiation, resulting in a reference transmitted radiation and reference reflected radiation; and analyzing resultant radiation for a heterodyned spectrum. The sample transmitted radiation may become the reference incident radiation, and the reference transmitted radiation may become the resultant radiation. The reference transmitted radiation may become the sample incident radiation, and the sample transmitted radiation may become the resultant radiation. The sample transmitted radiation may become the reference incident radiation, and the reference reflected radiation may become the resultant radiation. The reference transmitted radiation may become the sample incident radiation, and the sample reflected radiation may become the resultant radiation.

A temperature measurement member measures a temperature of an inspection object or a temperature of a mounting table on which the inspection object is placed inside an inspection apparatus that inspects the inspection object. The temperature measurement member is attached to an attachment position of a probe card used for electrical characteristic inspection in the inspection apparatus, and includes a main body having substantially a same shape as the probe card; a probe formed to extend from the main body toward the mounting table in a state in which the temperature measurement member is attached to the attachment position; and a temperature sensor configured to measure the temperature of the inspection object or the mounting table. The sensor transmits/receives a temperature measurement-related electrical signal to/from an inspection part via the probe card in the electrical characteristic inspection, and transmits a temperature measurement result to the inspection part.

A method for measuring a temperature of a fluid for use with a microfluidic analysis apparatus includes a reading step and a determination step. During the reading step, at least one diffusion signal is read, the latter representing a diffusion characteristic of the diffusion of the fluid. During the determination step, the temperature is determined using the at least one diffusion signal.

A temperature monitoring and labeling system that includes, among other things, a computer and a thermometer having an electronic label display in communication with the computer.

A microprobe is provided that includes a microsphere optical resonator operatively coupled to a nanoscatterer. The microsphere optical resonator includes a back surface and a front surface opposite the front surface. The front surface is configured to receive a focused laser beam, and the nanoscatterer is positioned adjacent to the back surface.

A microprobe is provided that includes a microsphere optical resonator operatively coupled to a nanoscatterer. The microsphere optical resonator includes a back surface and a front surface opposite the front surface. The front surface is configured to receive a focused laser beam, and the nanoscatterer is positioned adjacent to the back surface.