The method includes the step of positioning the product to be measured on a transport table. The method proceeds with the step of advancing the product under a frame that includes at least one terahertz sensor. The method continues with the step of emitting incident terahertz radiation in the direction of the product. The method proceeds with the step of detecting the signal corresponding to a multiple spectrum of terahertz rays reflected by the interfaces encountered by the incident ray. The method continues with the step of analyzing the signal to determine various peaks corresponding to the various interfaces encountered. The method proceeds with the step of determining, on the basis of the amplitude of each peak, the temperature of each layer of material through which the incident ray passes.

An electronic apparatus comprises a plurality of antenna modules separated by a distance from each other; a detection unit configured to detect a specific condition of each of the plurality of antenna modules, the specific condition being a factor to degrade that antenna module; and at least one control device, wherein the at least one control device performs activation frequency adjustment in which the at least one control device lowers frequency of activating at least one of the plurality of antenna modules of which the specific condition has been detected by the detection unit to below frequency of activating any of the plurality of antenna modules other than the at least one of the plurality of antenna modules.

Temperature locale sensors include an enclosure defining a sealed volume with a phase-change material therein at a known pressure. The phase-change material is formulated to exhibit a gas-to-solid phase change, without condensing to a liquid phase, at the known pressure and a targeted temperature, i.e., the material's “deposition temperature.” The phase-change material—while at least partially in gaseous form, either initially or after sublimation—is exposed to an environment with temperatures varying by location, including a maximum temperature above the phase-change material's deposition temperature and other temperatures at or below the deposition temperature. The gaseous phase-change material, in a location at the deposition temperature, solidifies from its gaseous phase to form solid grain deposits on a surface within the enclosure of the sensor. The solid deposits precisely identify the location of the specific, targeted deposition temperature.

The invention offers high resolution and accuracy for nanoscale temperature mapping. Instead of collecting light after emission in near-field that decays to far-field, the present invention directly couples the near-field waves to a polaritonic-coated infrared probe. The polaritonic coating can be formed on an IR-tuned optical fiber to receive the coupled IR radiation and form polaritons, including plasmons or phonons, using the IR polaritonic material. The IR polaritons propagate along the probe decay back into the fiber core without substantial losses to far-field and are transmitted to a detector, such as a spectroscope. The coupling of the near-field energy to emission detected through the tip apex of fiber can be expressed as emission spectra. Through mapping with other spatial points, multi-dimensional displays and other information can be provided. The resolution can be less than 100 nanometers, such as at least an order of magnitude less than 100 nanometers.

A measuring arrangement and method for a thermal analysis of a sample, having a crucible for storing a sample in the crucible, as well as a sensor for measuring a sample temperature of the sample when the crucible is arranged on the sensor. To provide for a high level of reproducibility of measurements in the case of such a measuring arrangement and a method for the thermal analysis performed with the measuring arrangement, the measuring arrangement has an anti-rotation protection for the crucible, in order to provide a predetermined rotational position of the crucible with respect to the sensor when the crucible is arranged on the sensor. The invention includes a method for the thermal analysis of a sample, which is performed using such a measuring arrangement.

Provided is a Raman spectroscopy method for simultaneously measuring a temperature and a thermal stress of a two-dimensional film material in situ. The method includes: providing the two-dimensional film material including a suspended part and a supported part and measuring Raman signals of the suspended part and the supported part; establishing equations of a Raman shift with temperature and a Raman shift with thermal stress for each of the suspended part and the supported part, and solving simultaneous equations to obtain coefficients with temperature and thermal stress; and scanning a characteristic Raman spectrum field of the two-dimensional film material and obtaining a temperature distribution and a thermal stress distribution of the two-dimensional film material according to the characteristic Raman spectrum field in combination of the coefficients of the Raman shift with temperature and the Raman shift with thermal stress.

Provided is a Raman spectroscopy method for simultaneously measuring a temperature and a thermal stress of a two-dimensional film material in situ. The method includes: providing the two-dimensional film material including a suspended part and a supported part and measuring Raman signals of the suspended part and the supported part; establishing equations of a Raman shift with temperature and a Raman shift with thermal stress for each of the suspended part and the supported part, and solving simultaneous equations to obtain coefficients with temperature and thermal stress; and scanning a characteristic Raman spectrum field of the two-dimensional film material and obtaining a temperature distribution and a thermal stress distribution of the two-dimensional film material according to the characteristic Raman spectrum field in combination of the coefficients of the Raman shift with temperature and the Raman shift with thermal stress.

A temperature estimating apparatus is provided with: a deriving device configured to derive a slope function, on the basis of a value of a complex impedance of a battery at a predetermined frequency out of values obtained at a plurality of different temperatures and on the basis of a temperature of the battery when the complex impedance is obtained, wherein the slope function indicates a relation between the value of the complex impedance at the predetermined frequency and an inverse of the temperature of the battery; and an estimator configured (i) to measure a value of the complex impedance at the predetermined frequency and (ii) to substitute the measured value of the complex impedance at the predetermined frequency into the slope function, thereby estimating a temperature of the battery when the value of the complex impedance is measured.

A temperature estimating apparatus is provided with: a deriving device configured to derive a slope function, on the basis of a value of a complex impedance of a battery at a predetermined frequency out of values obtained at a plurality of different temperatures and on the basis of a temperature of the battery when the complex impedance is obtained, wherein the slope function indicates a relation between the value of the complex impedance at the predetermined frequency and an inverse of the temperature of the battery; and an estimator configured (i) to measure a value of the complex impedance at the predetermined frequency and (ii) to substitute the measured value of the complex impedance at the predetermined frequency into the slope function, thereby estimating a temperature of the battery when the value of the complex impedance is measured.

The disclosed embodiments relate to the monitoring and control of additive manufacturing. In particular, a method is shown for removing errors inherent in thermal measurement equipment so that the presence of errors in a product build operation can be identified and acted upon with greater precision. Instead of monitoring a grid of discrete locations on the build plane with a temperature sensor, the intensity, duration and in some cases position of each scan is recorded in order to characterize one or more build operations.