Methods and devices are provided for circuits. One device includes an adjustment circuit having an adjustable resistor for modifying a resistance value of a resistive device, the adjustment circuit connected to an adjustment terminal of the resistive device. The resistance value of the adjustable resistor changes, when a voltage or charge on the adjustment terminal of the adjustable resistor is changed. The adjustable resistor is a phase change element with an adjusting terminal to which different voltage values are applied for adjusting a conversion device threshold value.

According to an aspect, a temperature sensor in a chip for determining a chip temperature comprises a first temperature sensor with a first characteristic, a second temperature sensor with a second characteristic, first characteristic being different from the second characteristic, a processor operative to determine the chip temperature is configured to determine a first parameter and a second parameter in the calibration mode and determining the chip temperature using the first parameter and the second parameter in a real time operating mode, wherein, the first parameter is derived from a first relation between the first characteristic and the second characteristic and the second parameter is at least based on first parameter.

A system comprises a gate driver that is configured to couple to a transistor disposed in a transistor module via a first pin. The gate driver comprises a duty cycle measurement circuit having a first input terminal and a first output terminal, the first input terminal coupled to a second pin via an isolator. The duty cycle measurement circuit comprises a flip-flop, a counter, a shift register, and a comparator. The system comprises an analog to digital converter circuit having a second input terminal, a second output terminal, and a reference terminal, the second input terminal coupled to a third pin configured to couple to a temperature-sensitive device disposed in the transistor module, the second output terminal coupled to a fourth pin via the isolator, and the reference terminal coupled to the first output terminal.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

An offset corrected bandgap reference and temperature sensor is disclosed. In a complementary metal-oxide-semiconductor (CMOS) bandgap reference, non-idealities in the operational amplifier (op-amp) bandgap reference circuit can lead to a voltage offset. This operational amplifier offset voltage is the dominant source of error in the bandgap reference. If the bandgap reference is used in a temperature sensor, it only needs to be accurate during the analog-to-digital conversion cycle. Embodiments of the present disclosure employ switched capacitors to store the operational amplifier offset during a sample mode in which the bandgap reference operates continuous-time. The operational amplifier offset is then corrected during a hold mode while the temperature sensor completes the analog-to-digital conversion.

A system comprises a gate driver that is configured to couple to a transistor disposed in a transistor module via a first pin. The gate driver comprises a duty cycle measurement circuit having a first input terminal and a first output terminal, the first input terminal coupled to a second pin via an isolator. The duty cycle measurement circuit comprises a flip-flop, a counter, a shift register, and a comparator. The system comprises an analog to digital converter circuit having a second input terminal, a second output terminal, and a reference terminal, the second input terminal coupled to a third pin configured to couple to a temperature-sensitive device disposed in the transistor module, the second output terminal coupled to a fourth pin via the isolator, and the reference terminal coupled to the first output terminal.

A temperature sensor arrangement includes a current integrating modulator that provides a count value dependent on the current supplied to its input terminal. A temperature-sensitive element includes a resistor to generate a current dependent on temperature. First and second switches alternately connect the temperature-sensitive element and another resistor to the input terminal of the current integrating modulator. The temperature sensor arrangement can be combined with an ambient light sensor sharing the current integrating modulator.

An abnormal temperature detection device includes a temperature acquirer configured to acquire temperature data, a preprocessor configured to perform preprocessing for calculating difference data indicating a difference sequence in the temperature data, generating substituted data in which either of a piece of difference data which is a positive number or a piece of difference data which is a negative number is substituted with zero, and calculating a similarity between the substituted data and reference data obtained from training data in which normality or abnormality has been identified, a learner configured to perform machine learning on the similarity calculated by the preprocessor and output an identification function, and a determiner configured to determine whether temperature data for detection acquired by the temperature acquirer and subjected to the preprocessing by the preprocessor is normal or abnormal by using the identification function.

An amplifier includes an amplification circuit including an input circuit receiving an input signal and configured to output an output signal by amplifying the input signal; and an offset cancelling circuit configured to cancel offset by controlling the input circuit according to activation control signal and offset control signal, wherein the offset cancelling circuit cancels the offset according to the offset control signal after the activation control signal is activated.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.