A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.

A piezoelectric element includes a piezoelectric element body including a first principal surface and a second principal surface opposing each other, and a plurality of external electrodes disposed on the first principal surface. A vibration member includes a third principal surface opposing the second principal surface. The piezoelectric element is joined to the third principal surface. A wiring member is electrically connected to the piezoelectric element. The wiring member includes a region located on the plurality of external electrodes and joined to the plurality of external electrodes. The region of the wiring member monolithically covers the plurality of external electrodes when viewed from a direction orthogonal to the first principal surface.

A pressure sensing device includes a pressure signal receiver configured to receive an analog pressure signal from a pressure sensor, a converter configured to convert the analog pressure signal to a digital pressure signal, and a processor configured to convert a pressure value of the digital pressure signal to a bit value corresponding to the pressure value and output the bit value. The processor is configured to convert the pressure value to a first bit value by a first bit resolution in response to the pressure value being included in a first pressure interval, and convert the pressure value to a second bit value by a second bit resolution in response to the pressure value being included in a second pressure interval. The second pressure interval is a pressure interval greater than the first pressure interval, and the first bit resolution is greater than the second bit resolution.

Provided are a MEMS pressure sensor and a method for forming the same. The method includes: preparing a first substrate including a first surface and a second surface opposite to each other; preparing a second substrate including a third surface and a fourth surface opposite to each other; bonding the first surface and the third surface with each other and forming a cavity between the first substrate and the pressure sensing region of the second substrate; thinning the second substrate from the fourth surface by partially removing the second base, to form a fifth surface opposite to the third surface; and forming a first conductive plug passing through the second substrate from the side of the fifth surface of the second substrate to the at least one conductive layer.

A pressure sensor includes a base substrate, a first insulating layer at the base substrate, a stationary electrode at the first insulating layer, a side-wall portion around the stationary electrode at the first insulating layer, and a membrane having electrical conductivity, facing the stationary electrode across a space, and supported by the side-wall portion. The side-wall portion includes a shield electrode on the first insulating layer and a second insulating layer on the shield electrode. A distance between the stationary electrode and the membrane is less than a distance between the shield electrode and the membrane.

Dishwashing appliances and methods, as provided herein, may include features or steps such as measuring a first pressure in a sump with a pressure sensor and storing the first pressure in a memory of the dishwashing appliance as a reference pressure. Dishwashing appliances and methods may further include features or steps for measuring a second pressure within the sump with the pressure sensor after measuring the first pressure, and determining that a check valve is failed when the second pressure exceeds the first pressure by at least a predetermined margin.

A differential MEMS pressure sensor includes a topping wafer with a top side and a bottom side, a diaphragm wafer having a top side connected to the bottom side of the topping wafer and a bottom side, and a backing wafer having a top side connected to the bottom side of the diaphragm wafer and a bottom side. The topping wafer includes a first cavity formed in the bottom side of the topping wafer. The diaphragm wafer includes a diaphragm, a second cavity formed in the bottom side of the diaphragm wafer underneath the diaphragm, an outer portion surrounding the diaphragm, and a trench formed in the top side of the diaphragm wafer and positioned in the outer portion surrounding the diaphragm.

Method for setting parameters for individual adaptation of an audio signal, including: performing a first listening test with the substeps: playing a plurality of first audio signals having different levels; obtaining feedback per frequency range from an individual which of the plurality of first acoustic signals is above an individual listening threshold; and using the lowest level of the different levels for which feedback is available as a level for the individual listening threshold per frequency range; performing adaptation of a second audio signal with the substeps: playing the second audio signal according to a total volume level considering a sound adaptation characteristic map; and varying the sound adaptation characteristic wherein the levels for the individual listening thresholds are used as minimum output levels in the sound adaptation characteristic map.