A light emitting diode (LED) array is formed by bonding an LED substrate to a backplane substrate via fitted nanotube interconnects. The backplane substrate may include circuits for driving the LED array. The LED substrate may be a chip or wafer, and may include one or more LED devices. The LED substrate is positioned above the backplane substrate, such that a LED device of the LED substrate is aligned to a corresponding circuit in the backplane substrate. Each of the fitted interconnects electrically connect a LED device to the corresponding circuit of the backplane substrate.

A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

A cantilever (30) for an ultrasound acoustic microscopy device is provided comprising a transmission tip (31) to contact a sample (11) to therewith transmit an ultrasound acoustic signal as an ultrasound acoustic wave into the sample. The cantilever further comprises a reception tip (32) separate from the transmission tip (31) to contact the sample to receive an acoustic signal resulting from reflections of the ultrasound wave from within the sample.

A cantilever (30) for an ultrasound acoustic microscopy device is provided comprising a transmission tip (31) to contact a sample (11) to therewith transmit an ultrasound acoustic signal as an ultrasound acoustic wave into the sample. The cantilever further comprises a reception tip (32) separate from the transmission tip (31) to contact the sample to receive an acoustic signal resulting from reflections of the ultrasound wave from within the sample.

This document is directed at a method of manufacturing a semiconductor element, the method comprising manipulating a surface of a substrate using an atomic force microscope, the atomic force microscope including a probe, the probe including a cantilever and a probe tip, the substrate including at least one or more device features embedded underneath the surface. The method comprises: imaging the embedded device features, and identifying that a position of the probe tip of the atomic force microscope is aligned with the feature; and displacing the probe tip transverse to the surface for exerting a stress for performing the step of surface manipulation, as for example contact holes. Imaging is performed by applying and obtaining an acoustic signal to and from the substrate via the probe tip, including a first and a second signal component at different frequencies. The imaging and surface manipulation are performed using said same probe and probe tip.

This document is directed at a method of manufacturing a semiconductor element, the method comprising manipulating a surface of a substrate using an atomic force microscope, the atomic force microscope including a probe, the probe including a cantilever and a probe tip, the substrate including at least one or more device features embedded underneath the surface. The method comprises: imaging the embedded device features, and identifying that a position of the probe tip of the atomic force microscope is aligned with the feature; and displacing the probe tip transverse to the surface for exerting a stress for performing the step of surface manipulation, as for example contact holes. Imaging is performed by applying and obtaining an acoustic signal to and from the substrate via the probe tip, including a first and a second signal component at different frequencies. The imaging and surface manipulation are performed using said same probe and probe tip.

An active medium piece (109), which has been taken out using a nanoprobe (108), is processed so as to match the shape of a nanoslot (104), and thus an active medium small piece (111) that is smaller than the active medium piece (109) is formed (a fourth step). For example, irradiation with an ion beam (110) is performed so that the active medium piece (109) is shaped (processed) into an active medium small piece (111) that has a three-dimensional shape suitable for being placed in the nanoslot (104). The active medium piece (109) is processed into the active medium small piece (111) in the state of being held by the nanoprobe (108).

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.