Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) system to receive a sample having a surface to be patterned. The system positions a conductive tip over a pixel region of the surface. While the conductive tip remains laterally fixed relative to the surface, the system applies a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region. The system stops applying the voltage and current when it senses the removal of the at least one atom. The system then verifies that the at least one atom has been removed from the pixel region.

Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Methods, systems, and devices are disclosed for performing mechanosynthesis, including those that involve bulk chemical preparation of tips, multiple tips for supplying feedstock, and use of sequential tips such as in a thermodynamic cascade; such features may simplify starting requirements, increase versatility, and/or reduce complexity in the mechanosynthesis equipment and/or process.

Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

The invention proposes a method for processing a sample with a processing arrangement, comprising the steps of: taking up a particle adhering on a sample surface of the sample with a measuring tip of the processing arrangement; modifying a physical and/or chemical nature of a surface section on the sample or on a deposition unit for providing an activated surface section; and moving the measuring tip into an interaction region of the activated surface section in which an attractive interaction acts between the particle taken up by the measuring tip and the activated surface section in order to transfer the particle from the measuring tip to the activated surface section.

The invention proposes a method for processing a sample with a processing arrangement, comprising the steps of: taking up a particle adhering on a sample surface of the sample with a measuring tip of the processing arrangement; modifying a physical and/or chemical nature of a surface section on the sample or on a deposition unit for providing an activated surface section; and moving the measuring tip into an interaction region of the activated surface section in which an attractive interaction acts between the particle taken up by the measuring tip and the activated surface section in order to transfer the particle from the measuring tip to the activated surface section.

This disclosure relates to an method for the nanoscale creation of functional defects in 2D materials with the ability to control their dimensions and compositions.

This disclosure relates to an method for the nanoscale creation of functional defects in 2D materials with the ability to control their dimensions and compositions.