An end effector assembly for use with an electrosurgical instrument is provided. The end effector assembly has a pair of opposing jaw members. One or more of the jaw members includes a support base, an electrical jaw lead, and a sealing plate coupled to the electrical jaw lead. The sealing plate has a stainless steel layer and one or more piezo electric sensors. The jaw member also includes an insulative plate disposed between the support base and the sealing plate.

A capacitive sensor to sense an electric field has a shield tube that extends axially along its own axis and has a first open end, an electric field sensor positioned within the shield tube, a source electrode, and a mass of dielectric insulating material positioned within the shield tube and around the shield tube. The shield tube is formed by a jacket having a plurality of first through openings that each have an area comprised between a minimum of 0.1 mm.sup.2 and a maximum of 3 mm.sup.2.

A capacitive sensor to sense an electric field has a shield tube that extends axially along its own axis and has a first open end, an electric field sensor positioned within the shield tube, a source electrode, and a mass of dielectric insulating material positioned within the shield tube and around the shield tube. The shield tube is formed by a jacket having a plurality of first through openings that each have an area comprised between a minimum of 0.1 mm.sup.2 and a maximum of 3 mm.sup.2.

Embodiments are directed to methods of producing devices using modified multi-layer, multi-material electrochemical fabrication processes and/or using a laser cutting processes wherein individual layers or layer groups are formed and then stacked and bonded to produce prototypes or production parts. The methods can reduce the cost and lead time of prototyping when compared with previous multi-layer, multi-material electrochemical fabrication processes and can also reduce the lead time of production quantities, by allowing multiple layers of a multilayer device to be formed simultaneously, e.g. in parallel on the same wafer. Additionally, these methods may be used to extend the maximum height to which parts may practically be made. Finally, the methods allow geometries that are impossible, impractical or difficult to release (e.g. microfluidic devices such as pumps or parts with long, narrow channels) to be fabricated in multiple pieces and then joined after full or partial release.

A cleaning film designed to remove foreign matter and particulates from working surfaces of cleaning wafers used in semiconductor processes. These processes include wafer sort test for cleaning of probe card pins and FEOL tooling for cleaning during wafer handling equipment and wafer chucks. The debris collected on the cleaning wafer working surfaces is removed by the particle removal film allowing the debris and foreign matter to be discarded. The use of the cleaning film allows the operator to refresh the cleaning wafer without use of an outside vendor and eliminates wet washing and the use of solvents in the cleaning process.

An electric contact having a contact resistance that is hardly increased even if the electric contact is repeatedly used for a long period of time. A base material of an electric contact is provided with a first contact part that is in contact with a first electrode of a first electric component, a second contact part that is in contact with a second electrode of a second electric component, and a spring part that presses the first contact part to the first electrode, and a wear-resistant contact point film is formed on a distal end portion of the first contact part. Furthermore, a highly conductive film is formed between a region of the wear-resistant contact point film and a distal end portion of the second contact part in the base material.

Electrical connection device comprising at least one substrate and one or several first electrical connection elements located on a front face of the electrical connection device such that they can be coupled to contact pads of an electronic device to which the electrical connection device is intended to be connected, each first electrical connection element comprising: at least one support, of which at least one first end is anchored to the substrate such that part of the support is suspended above the front face, the support comprising at least a portion of piezoelectric material located between two electrodes and capable of moving said part of the support in two directions approximately perpendicular to the front face depending on a value of an electrical voltage intended to be applied onto the electrodes; at least one electrical conducting element located on said part of the support.

Electrical connection device comprising at least one substrate and one or several first electrical connection elements located on a front face of the electrical connection device such that they can be coupled to contact pads of an electronic device to which the electrical connection device is intended to be connected, each first electrical connection element comprising: at least one support, of which at least one first end is anchored to the substrate such that part of the support is suspended above the front face, the support comprising at least a portion of piezoelectric material located between two electrodes and capable of moving said part of the support in two directions approximately perpendicular to the front face depending on a value of an electrical voltage intended to be applied onto the electrodes; at least one electrical conducting element located on said part of the support.

A method of probe testing dies, the method includes loading a wafer having a first die and a second die into a prober and bringing probes of the prober into contact with first contact pads of the first die according to first probe parameters. A first probe contact test of first values of the contact between the probes and the first contact pads is performed, and a die test of the first die is performed after performing the probe contact test. Results of the die test and results of the probe contact test are saved and second probe parameters are automatically generated based on at least the results of the first probe contact test.

A method of probe testing dies, the method includes loading a wafer having a first die and a second die into a prober and bringing probes of the prober into contact with first contact pads of the first die according to first probe parameters. A first probe contact test of first values of the contact between the probes and the first contact pads is performed, and a die test of the first die is performed after performing the probe contact test. Results of the die test and results of the probe contact test are saved and second probe parameters are automatically generated based on at least the results of the first probe contact test.