An embodiment of the present invention provides a test socket for a semiconductor device, comprising: a base layer having a first surface and a second surface opposite to the first surface, and having, on the second surface, an external connection pad formed at a pitch corresponding to an electrode terminal of a test board; a plurality of circuit patterns formed to be partially exposed on the surface of the base layer and rearranged at a pitch corresponding to the external connection pad; a plurality of electrode patterns formed on the first surface to be electrically connected to the circuit patterns and an external connection terminal of a semiconductor device, and arranged at a pitch corresponding to the external connection terminal; and an elastic layer covering the electrode patterns such that the electrode patterns are partially exposed.

An embodiment of the present invention provides a test socket for a semiconductor device, comprising: a base layer having a first surface and a second surface opposite to the first surface, and having, on the second surface, an external connection pad formed at a pitch corresponding to an electrode terminal of a test board; a plurality of circuit patterns formed to be partially exposed on the surface of the base layer and rearranged at a pitch corresponding to the external connection pad; a plurality of electrode patterns formed on the first surface to be electrically connected to the circuit patterns and an external connection terminal of a semiconductor device, and arranged at a pitch corresponding to the external connection terminal; and an elastic layer covering the electrode patterns such that the electrode patterns are partially exposed.

The purpose of the present disclosure is to provide a electro-conductive part protecting member for a signal transmitting connector and a manufacturing method therefor, and a signal transmitting connector having same and a manufacturing method therefor, the electro-conductive part protecting member being capable of protecting an electro-conductive part so as to be able to minimize deformation of and damage to the electro-conductive part coming into contact with the terminals of an electronic component such as a semiconductor package, and more specifically, the electro-conductive part protecting members capable of being elastically modified in the longitudinal direction of the electro-conductive parts by having a hollow tube-shaped protection member body encompassing the electro-conductive parts, and a spiral groove to promote elasticity provided along the circumference of the protection member body so as to pass through the inside and the outside of the protection member body.

There is provided a wafer inspection device that is capable of bringing a polishing wafer into proper contact with probes without lowering throughput. The total value T of a thickness t.sub.1 of a polishing plate, a thickness t.sub.2 of a polishing wafer and a magnitude t.sub.3 extending from a lower surface of a main body of a pogo frame to a lower end of each probe of a probe card is set to be larger than a magnitude t.sub.4 of a lip seal protruding from an upper surface of a chuck top.

A method for upgrading an automatic testing system includes electrically connecting at least one pogo pin attaching device to an expansion instrument and a pogo pin of a pogo pin interface of the automatic testing system wherein the pogo pin attaching device comprises at least one metal attaching member and at least one cable, each of said at least one cable having two opposite ends, a first end electrically connected to the metal attaching member and a second end electrically connected to the expansion instrument, and the metal attaching member attaches to the pogo pin. In response to operating the automatic testing system, electrically connecting the pogo pin to a subject so that a measurement path is established between the subject and the expansion instrument through the pogo pin attaching device, wherein the measurement path is configured to connect signals for upgrading the automatic testing system.

Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

A probe for direct nano- and micro-scale electrical characterization of materials and semi conductor wafers. The probe (10) comprises a probe body (12), a first cantilever (20a) extending from the probe body. The first cantilever defining a first loop with respect to said probe body. The probe further comprises a first contact probe being supported by said first cantilever, and a second contact probe being electrically insulated from the first contact probe. The second contact probe being supported by the first cantilever or by a second cantilever (20b) extending from the probe body.

Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.