Methods of fabricating a plurality of carbon nanotube-bundle probes on a substrate are disclosed. In some embodiments, the method includes the following: providing a substrate having a top surface and a bottom surface; forming an array of electrically conductive pads on the top surface, the array of electrically conductive pads being formed to mirror an array of pads on an integrated circuit that is to be tested; applying a catalyst for promoting growth of carbon nanotubes on each of the array of electrically conductive pads; heating the substrate in a carbon-rich environment thereby growing nanotubes extending upwardly from each of the array of electrically conductive pads and above the top surface of the substrate thereby forming a plurality of carbon nanotube-bundle probes extending upwardly above the top surface of the substrate; and capping each of the plurality of carbon nanotube-bundle probes with an electrically conductive material.

The disclosure relates to a test socket and a method of fabricating a test socket that supports a probe stretchable in a longitudinal direction. The method of fabricating a test socket includes forming a probe hole for accommodating the probe in a base member made of a conductive material, filling the probe hole with a resin as an insulating material to a predetermined depth from an upper surface of the base member to form a probe support member; and forming a first support hole for supporting one end portion of the probe in the probe support member in the probe hole to expose the one end portion of the probe.

Disclosed are a probe sheet with a multi-layer contact tip and a method of manufacturing the same capable of improving the design freedom of a contact tip formed on a probe sheet of a probe card for testing a semiconductor device to come in contact with a pad of the semiconductor device. According to the present invention, the design freedom of a contact tip formed on a probe sheet of a probe card for testing a semiconductor device to come in contact with a pad of the semiconductor device can be improved, and since the shape of a contact surface of a contact tip is maintained the same and contact resistance is maintained in an allowable range even when a protective layer coated on the contact tip to increase durability of the contact tip is worn, test reliability of the probe card can be improved.

Systems, methods, and devices for characterizing a defect of a device-under-test (DUT). A first measurement is performed of a first quantity on the DUT prior to performing a first operation on the DUT, producing a first result. The first operation is performed on the DUT, and subsequently a second measurement of the first quantity is performed on the DUT, producing a second result. A defect class is characterized for the DUT from a plurality of defect classes based on a difference between the first and second results.

A socket assembly with liquid cooling frame for a semiconductor integrated circuit (IC) chip is provided. The socket assembly includes a liquid cooling socket frame including a metallic frame body defining an opening sized to receive the semiconductor IC chip, wherein the frame body includes one or more channels transversely positioned through the frame body and positioned in an interior of the frame body, the channels defining a fluid path. The socket assembly also includes a socket cartridge including a metallic cartridge body defining a plurality of cavities each sized to receive a test probe therein, the socket frame covering a portion of the socket cartridge and exposing the plurality of cavities at the opening.

An insulating block configured for attachment to an electrical structure without the use of a tool. The insulating block is formed from an electrical insulator. One of the electrical structure and the insulating block may have a clip that is configured to engage a catch surface on the other of the electrical structure and the insulating block without the use of a tool. An opening or recess of the electrical structure may be configured to receive a portion of the insulating block having the clip or catch surface, and the portion of the insulating block may move within the opening or recess from a disengaged position to an engaged position, in which the clip engages the catch surface to securely attach the insulating block to the electrical structure. The electrical structure may be a meter socket enclosure. The combination of the insulating block with the electrical structure.

An insulating block configured for attachment to an electrical structure without the use of a tool. The insulating block is formed from an electrical insulator. One of the electrical structure and the insulating block may have a clip that is configured to engage a catch surface on the other of the electrical structure and the insulating block without the use of a tool. An opening or recess of the electrical structure may be configured to receive a portion of the insulating block having the clip or catch surface, and the portion of the insulating block may move within the opening or recess from a disengaged position to an engaged position, in which the clip engages the catch surface to securely attach the insulating block to the electrical structure. The electrical structure may be a meter socket enclosure. The combination of the insulating block with the electrical structure.

A method for repairing a test contact arrangement in which a test contact which is disposed on a test contact carrier by means of solder material and is incorrectly positioned is gripped at a body edge by means of a gripping tool in a gripping contact phase, an absorption surface which is realized on an outer surface of the gripping tool is treated with laser radiation during the gripping contact phase, and the gripping tool performs a movement on at least one axis when the temperature is at the softening point of the solder material, in such a manner that the incorrect position is corrected by means of the movement to bring the test contact into a desired position.

A method for repairing a test contact arrangement in which a test contact which is disposed on a test contact carrier by means of solder material and is incorrectly positioned is gripped at a body edge by means of a gripping tool in a gripping contact phase, an absorption surface which is realized on an outer surface of the gripping tool is treated with laser radiation during the gripping contact phase, and the gripping tool performs a movement on at least one axis when the temperature is at the softening point of the solder material, in such a manner that the incorrect position is corrected by means of the movement to bring the test contact into a desired position.

[Objective] To provide a wiring substrate for electronic component inspection apparatus which includes a first laminate of resin layers with a plurality of pads for probe provided on its front surface and a second laminate of ceramic layers disposed on the back side of the first laminate and which, despite joining by brazing of a plurality of studs to the back surface of the second laminate, is free from deformation of resin of the first laminate caused by softening or the like and from accidental formation of a short circuit between brazing material layers used for the brazing and external connection terminals formed on the back surface of the second laminate.

[Means for Solution] A wiring substrate for electronic component inspection apparatus 1 which includes a first laminate 3 composed of a plurality of stacked resin layers j1 to j3 and having a plurality of pads for probe 9 on its front surface 5, a second laminate 4 disposed on a back surface 6 side of the first laminate 3 and composed of a plurality of stacked ceramic layers c1 to c3, and a plurality of studs 20a joined to a back surface 8 of the second laminate 4 and in which the resin layers j1 to j3 of the first laminate 3 are formed of a resin having a thermal deformation temperature of 300 C. or higher, and the studs 20a are joined to surfaces of metal layers 16 formed on the back surface 8 of the second laminate 4 via brazing material layers 28, respectively.