Patent classifications
G01T7/00
Deterioration determination method and deterioration determination device for industrial x-ray imaging apparatus
A deterioration determination method in a deterioration determination device configured to determine deterioration of an X-ray detector of an industrial X-ray imaging apparatus, the deterioration determination method including: an acquisition step of acquiring a captured image generated by the X-ray detector; a statistical processing step of generating statistical processing information of the captured image; and a determination step of determining whether or not the X-ray detector has been deteriorated, based on the statistical processing information.
METHODS AND APPARATUS FOR PERFORMING DIFFUSE OPTICAL IMAGING
An apparatus for performing diffuse optical imaging of a patient, said apparatus comprising: a computer; at least one sensor module comprising at least one optical source, at least one photodetector, and calibration data specific to said at least one sensor module; means for communicating between said computer and said at least one sensor module; means for automatically accessing said calibration data; and means for adjusting said apparatus in order to produce calibrated measurements.
Radiation detector, radiographic imaging device, and manufacturing method
A radiation detector including: a substrate formed with a plural pixels in pixel region of a flexible base member, the plural pixels accumulates charges generated in response to light converted from radiation; a conversion layer provided at a surface to which the pixel region is provided on the base member, the conversion layer converts the radiation into light; and a reinforcement substrate provided at a surface of the conversion layer that faces a surface of the substrate side, the reinforcement substrate contains a material having a yield point and has a higher rigidity than the base member.
Radiation detector, radiographic imaging device, and manufacturing method
A radiation detector including: a substrate formed with a plural pixels in pixel region of a flexible base member, the plural pixels accumulates charges generated in response to light converted from radiation; a conversion layer provided at a surface to which the pixel region is provided on the base member, the conversion layer converts the radiation into light; and a reinforcement substrate provided at a surface of the conversion layer that faces a surface of the substrate side, the reinforcement substrate contains a material having a yield point and has a higher rigidity than the base member.
RADIATION DETECTION DEVICE, SEMICONDUCTOR MEMORY DEVICE AND RADIATION DETECTION METHOD
A radiation detection device includes a non-volatile memory chip including a plurality of stacked memory cells, and a controller configured to detect gamma rays incident on the non-volatile memory chip during a gamma ray detection window according to a data inversion or a threshold voltage change of at least some of the memory cells in the non-volatile memory chip during the gamma ray detection window.
RADIATION DETECTION DEVICE, SEMICONDUCTOR MEMORY DEVICE AND RADIATION DETECTION METHOD
A radiation detection device includes a non-volatile memory chip including a plurality of stacked memory cells, and a controller configured to detect gamma rays incident on the non-volatile memory chip during a gamma ray detection window according to a data inversion or a threshold voltage change of at least some of the memory cells in the non-volatile memory chip during the gamma ray detection window.
Radiation detection apparatus having an analyzer within a housing
A radiation detection apparatus can include a scintillator to emit scintillating light in response to absorbing radiation; a photosensor to generate an electronic pulse in response to receiving the scintillating light; an analyzer to determine a characteristic of the radiation; and a housing that contains the scintillator, the photosensor, and the analyzer, wherein the radiation detection apparatus to is configured to allow functionality be changed without removing the analyzer from the housing. The radiation detection apparatus can be more compact and more rugged as compared to radiation detection apparatuses that include a photomultiplier tube.
Radiation detection apparatus having an analyzer within a housing
A radiation detection apparatus can include a scintillator to emit scintillating light in response to absorbing radiation; a photosensor to generate an electronic pulse in response to receiving the scintillating light; an analyzer to determine a characteristic of the radiation; and a housing that contains the scintillator, the photosensor, and the analyzer, wherein the radiation detection apparatus to is configured to allow functionality be changed without removing the analyzer from the housing. The radiation detection apparatus can be more compact and more rugged as compared to radiation detection apparatuses that include a photomultiplier tube.
Radiation window
According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.
Radiation window
According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.