The present invention provides an infrared selective emitter in which since infrared energy can be emitted in a desired wavelength band by adjusting a metamaterial having a repeating structure on a plane, infrared camouflage is possible by attaching to the surface of the shape of an object to be camouflaged, and at the same time, the infrared selective emitter has flexible characteristics that can be applied to curved surfaces without limitations on the shape of an object.

Provided an imaging apparatus including a first optical device, a second optical device disposed such that light transmitted through the first optical device is incident on the second optical device, and a third optical device disposed such that light transmitted through the second optical device is incident on the third optical device, wherein at least one of the first optical device, the second optical device, and the third optical device includes a plurality of nanostructures, and heights of at least two nanostructures of the plurality of nanostructures are different from each other.

An imaging system includes at least one laser light source having a wavelength in the visible spectral range and a beam guidance element with high solarization resistance at high beam power densities. The invention also relates to the use of the imaging system, in particularly in projectors and in material processing.

A device for luminescent imaging includes an array of imaging pixels, a photonic structure over the array of imaging pixels, and an array of features over the photonic structure. A first feature of the array of features is over a first pixel of the array of imaging pixels, and a second feature of the array of features is over the first pixel and spatially displaced from the first feature. A first luminophore is within or over the first feature, and a second luminophore is within or over the second feature. The device includes a radiation source to generate first photons having a first characteristic at a first time, and generate second photons having a second characteristic at a second time. The first pixel selectively receives luminescence emitted by the first and second luminophores responsive to the first photons at the first time and second photons at the second time, respectively.

Systems and techniques are provided for meta-lens cameras. For example, an apparatus can include a first substrate including a first aperture and a second substrate including a first meta-lens. The first substrate and the second substrate are mechanically coupled such that at least a first portion of the first aperture is disposed over at least a second portion of the first meta-lens.

Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

The disclosed structure is configured such that it does not support electromagnetic waves having frequencies within a selected band gap; those electromagnetic waves are thus reflected. Some variations provide an omnidirectional infrared reflector comprising a three-dimensional photonic crystal containing: rods of a first material that has a first refractive index, wherein the rods are arranged to form a plurality of lattice periods in three dimensions, and wherein the rods are connected at a plurality of nodes; and a second material that has a refractive index that is lower than the first refractive index, wherein the rods are embedded in the second material. The lattice spacing and the rod radius or width are selected to produce a photonic band gap within a selected band of the infrared spectrum. Methods of making and using the three-dimensional photonic crystal are described. Applications include thermal barrier coatings and blackbody emission signature control.

A photonic reflector device includes a first layer, a second layer, and a third layer. The first layer, which functions as a retro-reflector, is formed of a first material contacting a second material and having a non-planar interface therebetween. The second layer, which functions as a photonic crystal, includes third and fourth materials that have different refractive indices from one another and are configured such that the second layer has a periodic optical potential along at least one dimension. The third layer, which functions as a Lambertian scatterer, includes a plurality of inclusions in a first matrix material. In combination, the layers may be optimized to synergistically reflect targeted wavelengths and/or polarizations of light.

The present example embodiment relates generally to creating a specific nanostructure on a substrate to improve the angle independence of a surface plasmon resonance mode. It may comprise a metamaterial structure comprising nanostructures located in a pattern on or within a substrate. The nanostructures may be paraboloid shaped and periodic.