Patent classifications
G02B1/00
Composite Film and Fabrication Method Therefor
A composite film (100, 200) and a preparation method therefor. The composite film (100, 200) may comprise: a substrate (110, 210); a first isolation layer (130), which is located on the top surface of the substrate (110, 210); and an optical film structure (A, B), which is located on the first isolation layer (130) and comprises a stacked structure formed from a light modulation layer (150), a light transmission layer (170) and an active layer (190) that generates light. The active layer (190) may be in contact with one of the light modulation layer (150) and the light transmission layer (170).
GRADIENT INDEX METAMATERIAL LENS FOR TERAHERTZ RADIATION
A lens (100) for terahertz radiation, which can be used in an antenna arrangement (400), comprises a cylindrical lens body made of silicon having a planar front surface and a planar back surface. The lens body has a front body region (30) which forms a silicon metamaterial with a relative permittivity that decreases in a lateral direction with increasing radial distance from a cylinder axis. A back body region (20) is immediately adjacent to the front body region and extends to the back surface. It consists of bulk silicon having a laterally constant relative permittivity. The front body region comprises holes that are distributed on the front surface in rings that are concentric with respect to the cylinder axis. The holes extend from the front surface to respective hole bottoms at an equal bottom level in a depth direction. The hole bottoms interface with the back body region.
QUANTUM DOT LENS, BACKLIGHT MODULE, DISPLAY DEVICE AND MANUFACTURING METHOD OF QUANTUM DOT LENS
A quantum dot lens, a backlight module, a display device and a manufacturing method of the quantum dot lens are provided. The quantum dot lens includes: a first lens, which is a convex lens and is provided with a first lens surface; a second lens, which is a concave lens and is provided with a second lens surface opposite to the first lens surface; and a quantum dot fluorescent resin layer, provided between the first lens surface and the second lens surface, and including more than one quantum dot fluorescent material. With the above structure, the quantum dot lens has a simple manufacturing process and ease of mass production, saves the quantum dot fluorescent material, and solves the problems of poor consistency and blue light leakage of existing quantum dot lenses.
QUANTUM DOT LENS, BACKLIGHT MODULE, DISPLAY DEVICE AND MANUFACTURING METHOD OF QUANTUM DOT LENS
A quantum dot lens, a backlight module, a display device and a manufacturing method of the quantum dot lens are provided. The quantum dot lens includes: a first lens, which is a convex lens and is provided with a first lens surface; a second lens, which is a concave lens and is provided with a second lens surface opposite to the first lens surface; and a quantum dot fluorescent resin layer, provided between the first lens surface and the second lens surface, and including more than one quantum dot fluorescent material. With the above structure, the quantum dot lens has a simple manufacturing process and ease of mass production, saves the quantum dot fluorescent material, and solves the problems of poor consistency and blue light leakage of existing quantum dot lenses.
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.
Meta-material, devices and methods of use thereof
This invention relates to a device for rapid focus control of one or more lasers. The controlled beam (5), is refracted by the dynamic refraction device (1) whose refractive index is set by its response to the control beam (3). The invention can be used for rapid focus and re-focus of a laser on a target as might be useful in such industries as flat panel television manufacturing, fuel injector nozzle manufacture, laser material processing/machining, laser scanning and indirect drive inertial confinement fusion.
MODULAR PHOTONIC REFLECTORS
A photonic reflector device includes a first layer, a second layer, and a third layer. The first layer, which functions as a retro-reflector, is formed of a first material contacting a second material and having a non-planar interface therebetween. The second layer, which functions as a photonic crystal, includes third and fourth materials that have different refractive indices from one another and are configured such that the second layer has a periodic optical potential along at least one dimension. The third layer, which functions as a Lambertian scatterer, includes a plurality of inclusions in a first matrix material. In combination, the layers may be optimized to synergistically reflect targeted wavelengths and/or polarizations of light.
Display substrate, display device and method of manufacturing same
A display substrate is provided. The display substrate includes a plurality of organic material film layers and a plurality of inorganic material film layers, wherein the plurality of organic material film layers and the plurality of inorganic material film layers are provided with a functional hole, and the functional hole is disposed in an aperture area of the display substrate. An organic material is provided on an inner side wall of the functional hole in at least one of the inorganic material film layers.
Broadband absorbers via nanostructures
The document discloses transferrable hyperbolic metamaterial particles (THMMP) that display broadband, selective, omnidirectional absorption and can be transferred to secondary substrates, allowing enhanced flexibility and selective transmission. A device having metamaterial nanostructures includes a substrate and metamaterial nanostructures engaged to the substrate to form an optical layer to interact with light incident to the optical layer to exhibit optical reflection or absorption or transmission that is substantially uniform over a spectral range of different optical wavelengths associated with materials and structural features of the metamaterial nanostructures, each metamaterial nanostructure including different material layers that are interleaved to form a multi-layer nanostructure.
MULTILAYER LIGHT-FILTERING STRUCTURE AND FABRICATING METHOD THEREOF
A multilayer light-filtering structure includes a substrate, a light-filtering layer and a patterned light-blocking layer. The light-filtering layer is disposed on a surface of the substrate, in which the light-filtering layer has a first surface away from the substrate, and the light-filtering layer includes a plurality of high refractive index films and a plurality of low refractive index films. The low refractive index films are correspondingly overlapped with the high refractive index films. The patterned light-blocking layer is disposed on the first surface and includes a plurality of metal material films and a plurality of dielectric films. The dielectric films are correspondingly overlapped with the metal material films.