A light shielding member of the present invention includes a first polarizing plate, a second polarizing plate facing the first polarizing plate, and a thermosensitive sheet interposed between the first polarizing plate and the second polarizing plate, in which the first polarizing plate and the second polarizing plate are positioned so that their respective transmission axes are different from each other, and the thermosensitive sheet contains a side chain crystal polymer that crystallizes at a temperature lower than the melting point and exhibits fluidity at a temperature of the melting point or higher. The light shielding member may transmit light at a temperature lower than the melting point and may not transmit light at a temperature of the melting point or higher, when light travels from one of the first polarizing plate and the second polarizing plate toward the other.

An optical film for a back light unit that includes an array of light emitting diodes. The optical film includes a substrate, and a plurality of regions of spatially modulated microstructures on at least one side of the substrate. The spatially modulated microstructures have different sizes and/or shapes configured to create a gradient structure within each region. The gradient structure within each region is constructed and arranged to cause more spreading of light when positioned directly above an individual light emitting diode and less spreading of light at locations not directly above an individual light emitting diode. Within the back light unit, the gradient structure converts light beams emitted by the respective light emitting diode at different angles into a more uniform and higher on-axis luminance upon exiting the back light unit.

A semiconductor device includes a base substrate comprising a first region and a second region, a photonics device disposed in the first region, the photonics device comprising a first doped layer disposed on the base substrate, and a second doped layer disposed on the first doped layer so that at least a portion vertically overlaps the first doped layer, the second doped layer having a first vertical thickness, and a transistor disposed in the second region, the transistor comprising a semiconductor layer disposed on the base substrate and horizontally spaced apart from the first doped layer, and a gate electrode horizontally spaced apart from the second doped layer and disposed on the semiconductor layer, disposed at the same vertical level as that of the second doped layer, and having a second vertical thickness equal to the first vertical thickness.

A film forming method includes preparing a substrate having a first region in which a metal film or an oxide film of the metal film is exposed, and a second region in which an insulating film is exposed, supplying, to the substrate, an organic compound containing, in a head group, a triple bond between carbon atoms represented by Chemical Formula (1) described in the specification, causing the organic compound to be selectively adsorbed in the first region among the first region and the second region, and cleaving the triple bond in the first region and forming a hydrophobic film having a honeycomb structure of carbon atoms through polymerization.

An optical device includes variable optical material that alters at least one of: incident ambient light, spectral content of incident ambient light or direction of incident ambient light through the optical device in response to a stimulus provided by the device. The device can sense intensity and/or spectral characteristics of ambient light and provide appropriate stimulus to various portions of the optical device to activate the variable optical material and alter at least one of: incident ambient light, spectral content of incident ambient light or direction of incident ambient light.

A metasurface unit cell for use in constructing a metasurface array is provided. The unit cell may include a ground plane layer comprising a first conductive material, and a phase change material layer operably coupled to the ground plane layer. The phase change material layer may include a phase change material configured to transition between an amorphous phase and a crystalline phase in response to a stimulus. The unit cell may further include a patterned element disposed adjacent to the phase change material layer and includes a second conductive material. In response to the phase change material transitioning from a first phase to a second phase, the metasurface unit cell may resonate to generate an electromagnetic signal having a defined wavelength. The first phase may be the amorphous phase or the crystalline phase and the second phase may be the other of the amorphous phase or the crystalline phase.

A method of producing transition-metal dichalcogenide crystals includes providing a silicon substrate having a phosphine-treated surface, exposing the phosphine-treated surface of the silicon substrate to a vapor containing a transition metal, and exposing the phosphine-treated surface of the silicon substrate to a vapor containing a chalcogen. A crystal of the transition-metal and the chalcogen is formed on the phosphine-treated surface of the silicon substrate to produce a transition-metal dichalcogenide crystal by chemical vapor deposition.

An electro-optic device comprising electrophoretic medium including a dispersion of a plurality of particles in a fluid configured to migrate within the fluid in a direction responsive to an applied electric field. The plurality of particles include a first type of particles having a first charge of a first charge polarity, a second type of particles having a second charge of a second charge polarity, and a third type of particles having a third charge of the second charge polarity. The first charge polarity is opposite to the second charge polarity, and the third type of particles are configured to migrate within the fluid in a direction responsive to an applied magnetic field gradient.

A diffraction grating includes a substrate and a plurality of fringes supported by the substrate. The fringes run parallel to each other in a first direction. A refractive index of a material of the plurality of fringes is anisotropic, whereby a refractive index contrast of the diffraction grating depends on direction of electric field of an impinging light beam, and through that dependence is a function of an azimuthal angle of the impinging light beam. A dependence of the diffraction efficiency on the azimuthal angle is affected by the dependence of the refractive index contrast on the direction of electric field of an impinging light beam. A pupil-replicating waveguide may use such a diffraction grating as a coupler for in- our out-coupling image light.

In an optical device, a center position of a pinhole is disposed at a center position of a sensor region, in a first individual region disposed in a center region, of a plurality of first individual regions, and a distance in planar view between a center region of the sensor region and the pinhole in the first individual region far from the center region is longer than a distance in planar view between the center region of the sensor region and the pinhole in the first individual region close to the center region in the first individual regions disposed in the peripheral region.