Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.

Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.

A component includes a memory region containing optically active material, a control arrangement configured to provide at least one control signal configured to change optical properties of the optically active material, and a detector configured to detect a change in the optical properties of the optically active material. The detector includes an evaluation input region configured to receive at least one evaluation input signal and an evaluation output region configured to provide an evaluation output signal. The memory region is arranged between the evaluation input region and the evaluation output region, and the control arrangement adjoins the memory region.

Aspects relate to methods and systems for optical matrix calculation. An exemplary system includes at least a first light source configured to output at least a first optical output having a first wavelength, at least a second light source configured to output at least a second optical output having a second wavelength substantially different from the first wavelength, at least an optical modulator configured to modulate the at least a first optical output, at least an optical matrix multiplier configured to perform at least two matrix multiplications, a first matrix multiplication as a function of the first optical output and a second matrix multiplication as a function of the second optical output, and at least a photodetector configured to measure the at least a first optical output and the at least a second optical output.

Photonic controlled-phase gates that include a dipole emitter chirally coupled to a plurality of photonic qubit pairs in a waveguide are disclosed herein. Each photonic qubit pair includes a two-qubit state |xy, wherein the two-qubit state |xy comprises a combination of single-qubit states |0 and |1, and may be |00, |01, |10, and |11. The dipole emitter is configured to interact with the single-qubit state |0 to impose a π phase shift, and the dipole emitter interacts with states |00, |01, and |10<

Photonic controlled-phase gates that include a dipole emitter chirally coupled to a plurality of photonic qubit pairs in a waveguide are disclosed herein. Each photonic qubit pair includes a two-qubit state |xy, wherein the two-qubit state |xy comprises a combination of single-qubit states |0 and |1, and may be |00, |01, |10, and |11. The dipole emitter is configured to interact with the single-qubit state |0 to impose a π phase shift, and the dipole emitter interacts with states |00, |01, and |10<

This disclosure relates to optical devices for quantum information processing applications. In one example implementation, a semiconductor structure is provided. The semiconductor structure may be embedded with single defects that can be individually addressed. An electric bias and/or one or more optical excitations may be configured to control the single defects in the semiconductor structure to produce single photons for use in quantum information processing. The electric bias and optical excitations are selected and adjusted to control various carrier processes and to reduce environmental charge instability of the single defects to achieve optical emission with wide wavelength tunability and narrow spectral linewidth. Electrically controlled single photon source and other electro-optical devices may be achieved.

Quantum state readout is achieved using four-wave mixing. A quantum-state carrier, e.g., a cesium 133 atom, is illuminated with a set of three wavelengths. In the event that the atom is in a first quantum state, e.g., an F=3 state of cesium 133, the illumination triggers emission in a first direction from the atom of a fourth wavelength due to four-wave mixing. Detection of the emission in the first direction thus indicates that the atom is in the first quantum state. In an embodiment, failure to detect an emission indicates the atom is in a second quantum state. In other embodiments, a second set of three wavelengths is used to provide a positive indication that the atom is in its second state, e.g., an F=4 state for cesium 133.

Quantum state readout is achieved using four-wave mixing. A quantum-state carrier, e.g., a cesium 133 atom, is illuminated with a set of three wavelengths. In the event that the atom is in a first quantum state, e.g., an F=3 state of cesium 133, the illumination triggers emission in a first direction from the atom of a fourth wavelength due to four-wave mixing. Detection of the emission in the first direction thus indicates that the atom is in the first quantum state. In an embodiment, failure to detect an emission indicates the atom is in a second quantum state. In other embodiments, a second set of three wavelengths is used to provide a positive indication that the atom is in its second state, e.g., an F=4 state for cesium 133.

An optoelectronic computing system includes a first semiconductor die having a photonic integrated circuit (PIC) and a second semiconductor die having an electronic integrated circuit (EIC). The PIC includes optical waveguides, in which input values are encoded on respective optical signals carried by the optical waveguides. The PIC includes an optical copying distribution network having optical splitters. The PIC includes an array of optoelectronic circuitry sections, each receiving an optical wave from one of the output ports of the optical copying distribution network, and each optoelectronic circuitry section includes: at least one photodetector detecting at least one optical wave from the optoelectronic operation. The EIC includes electrical input ports receiving respective electrical values. The first semiconductor die and the second semiconductor die are electrically coupled in a controlled collapse chip connection, with the electrical output port of the PIC connected to one of the electrical input ports of the EIC.