An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

A substrate processing apparatus includes a carrier block, an end block for returning a substrate picked up from the carrier block to the carrier block, and a middle block. The middle block includes a plurality of first processing modules stacked one above another, each being configured to process the picked-up substrate and directed to the end block or the substrate returning from the end block to the carrier block; a first transfer mechanism for vertically moving to transfer the substrate that is transferred from one of the carrier and end blocks to the middle block, to a respective one of the first processing modules, and delivering the substrate to the other of the carrier and end blocks; and a second transfer mechanism for transferring the substrate from the other of the carrier and end blocks to the one thereof, without passing through the plurality of first processing modules.

A substrate liquid treatment method includes: (a) rotating the substrate about the vertical axis; (b) supplying the treatment liquid to the rotating substrate from the second nozzle with a falling point of the treatment liquid supplied from the second nozzle moving from the central portion to the peripheral portion of the substrate, while supplying the treatment liquid to the central portion of the substrate from the first nozzle, (c) after (b), moving the second nozzle from the peripheral portion to the central portion of the substrate with the supplying of the treatment liquid from the second nozzle being stopped, while continuing supplying the treatment liquid to the central portion of the rotating substrate from the first nozzle; and (d) after (c), supplying the treatment liquid to the rotating substrate from the second nozzle.

A substrate processing method performs a photolithography processing on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.

A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

A substrate treating apparatus according to the present invention includes: an index unit having an index robot and a port on which a container containing a substrate is placed; a process treating unit having a development treating unit in which a first development treating chamber and a second development treating chamber for performing a substrate development process are arranged in divided layers; and a first path unit arranged between the development treating unit and the index unit, wherein the first development treating chamber includes a development module, a first heating module, and a first main transport robot arranged in a movement passage accessible to the development module and the first heating module, wherein the first path unit includes a second heating module, a first buffer module, a cooling module, a second buffer module, and a first buffer transport robot arranged in a movement passage accessible to the second heating module, the first buffer module, the cooling module and the second buffer module.