A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

An imprint apparatus includes a controller for controlling an imprint process and a supply device for supplying an imprint material. The supply device includes discharge devices to discharge an imprint material, and a discharge controller to control the discharge devices under the control of the controller. The discharge controller includes a buffer memory to temporarily store driving waveform data. Each of the discharge devices includes a discharge element and a driver for driving the discharge element based on the driving waveform data stored in the buffer memory. While a supply step of supplying an imprint material for a first shot region is performed, the controller transfers the driving waveform data for the supply step of a second shot region to a storage area of the buffer memory which is not used in the supply step of the first shot region.

In a method of manufacturing a photo mask used in a semiconductor manufacturing process, a mask pattern layout in which a plurality of patterns are arranged is acquired. The plurality of patterns are converted into a graph having nodes and links. It is determined whether the nodes are colorable by N colors without causing adjacent nodes connected by a link to be colored by a same color, where N is an integer equal to or more than 3. When it is determined that the nodes are colorable by N colors, the nodes are colored with the N colors. The plurality of patterns are classified into N groups based on the N colored nodes. The N groups are assigned to N photo masks. N data sets for the N photo masks are output.

A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.

A method of manufacturing a patterned stamp (100) for patterning a contoured surface (10) is disclosed. The method comprises applying a layer (115) of a pliable material precursor over a master (50) carrying an inverse pattern (52) to form a desired pattern (112) in said layer; curing the pliable material precursor to form a pliable stamp layer (120) comprising said desired pattern; providing an intermediate stamp structure by adhering a porous pliable support layer (130) to the pliable stamp layer; releasing the intermediate stamp structure from the master; forcing the intermediate stamp structure onto the contoured surface with said pattern of features facing the contoured surface; forming the patterned stamp by filling the porous pliable support layer with a filler material to reduce the pliability of the support layer; and removing the patterned stamp from the contoured surface. A corresponding patterned stamp, imprinting method and imprinted article are also disclosed.

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.

Disclosed herein are a resin composition for underlayer film formation which is capable of forming an underlayer film having good adhesiveness to a base material and good surface state, an imprint forming kit, a laminate, a pattern forming method, and a method for producing a device. Provided is a resin composition for underlayer film formation, including a resin, a nucleophilic catalyst, and a solvent, in which the content of the nucleophilic catalyst is 0.01 to 0.3 mass % with respect to the solid content of the resin composition for underlayer film formation.

The present invention provides an imprint apparatus comprising a deforming unit configured to deform a pattern surface by applying a force to a mold, a measuring unit configured to measure a deformation amount of the pattern surface, a control unit configured to control the measuring unit to measure the deformation amount in each of a plurality of states in which a plurality of the forces are applied to the mold, a calculation unit configured to calculate a rate of change in the deformation amount as a function of a change in the force applied to the mold, and a calibration unit configured to calibrate a control profile describing a time in the imprint process, and the force applied to the mold, based on the rate of change in the deformation amount.

Gray-tone lithography techniques for controlling the thickness profile of an overcoat layer on a surface-relief grating that has a non-uniform grating parameter (e.g., depth, duty cycle, or period), compensating for the non-uniform etch rate in a large area, defining etch/block regions, and/or controlling the thickness of the grating layer.

A method for manufacturing a plurality of mechanical resonators (100) in a manufacturing wafer (10), the resonators being intended to be fitted to an adjusting member of a timepiece, the method comprising the following steps: (a) manufacturing a plurality of resonators in at least one reference wafer according to reference specifications, such manufacture comprising at least one lithography step to form patterns of the resonators on or above the reference wafer and a step of machining in the reference plate using the patterns; (b) for the at least one reference plate, establishing a map indicative of the dispersion of stiffnesses of the resonators relative to an average stiffness value; (c) dividing the map into fields and determining a correction to be made to the dimensions of the resonators for at least one of the fields in order to reduce the dispersion; (d) modifying the reference specifications for the lithography step so as to make the corrections to the dimensions for the at least one field in the lithography step; (e) manufacturing resonators in a manufacturing wafer using the modified specifications.