There is a described a patch-clamp chip for making electrical measurements on a biological sample. The patch-clamp chip comprising a plurality of layers comprising poly-dimethylsiloxane (PDMS) forming a stack. It comprises at least a chip surface layer comprising an aperture formed therethrough and which upwardly opens on the surface, where the biological sample is provided. A microfluidic channel layer comprising PDMS extends below the plane of the chip surface layer and comprises a microfluidic channel formed therein. The aperture of the chip surface layer downwardly opens on the microfluidic channel. Electrophysiological measurements are made between an internal solution in the microfluidic channel and the external solution on the chip surface. The measurements can be performed via a bottom electrode. A plurality of apertures and corresponding microfluidic channels can be provided to perform simultaneous measurements on a plurality of samples, independently.

A method of forming a three-dimensional object, wherein said three-dimensional object is an insert for use between a helmet and a human body, is described. The method may use a polymerizable liquid, or resin, useful for the production by additive manufacturing of a three-dimensional object, comprising a mixture of (i) a light polymerizable liquid first component, and (ii) a second solidifiable component that is different from said first component.

A method of forming a three-dimensional object, wherein said three-dimensional object is an insert for use between a helmet and a human body, is described. The method may use a polymerizable liquid, or resin, useful for the production by additive manufacturing of a three-dimensional object, comprising a mixture of (i) a light polymerizable liquid first component, and (ii) a second solidifiable component that is different from said first component.

Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support. The lithography mask processing chambers may include a cover ring positioned atop the substrate support. The cover ring may define a rectilinear substrate seat. A top surface of the rectilinear substrate seat may be elevated above the top surface of the substrate support. An outer periphery of the rectilinear substrate seat may be positioned outward of the plurality of lift pins.

A method for characterizing post-processing data in terms of individual contributions from processing stations, the post-processing data relating to a manufacturing process for manufacturing integrated circuits on a plurality of substrates using a corresponding processing apparatus for each of a plurality of process steps, at least some of the processing apparatuses each including a plurality of the processing stations, and wherein the combination of processing stations used to process each substrate defines a process thread for the substrate; the method including: obtaining post-processing data associated with processing of the plurality of substrates in a cyclic sequence of processing threads; and determining an individual contribution of a particular processing station by comparing a subset of the post-processing data corresponding to substrates having shared process sub-threads, wherein a process sub-thread describes the process steps of each process thread other than the process step to which the particular processing station corresponds.

A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

A method for forming ultra-high density integrated circuitry, such as for a 6T SRAM, for example, is provided. The method involves applying double patterning litho-etch litho-etch (LELE) and using a spacer process to shrink the critical dimension of features. To improve process margins, the method implements a double-patterning technique by modifying the layout and splitting cross-coupling straps into two colors (e.g., each color corresponds to a mask-etch process). In addition, a spacer process is implemented to shrink feature size and increase the metal-to-metal spacing between the two cross-coupling straps, in order to improve process margin and electrical performance. This is achieved by depositing a spacer layer over an opening in a hardmask, followed by spacer etch back. The opening is thus shrunk by the amount of spacer thickness. The strap-to-strap spacing may then be increased by twice the amount of spacer thickness.

A substrate transport apparatus includes transport hands that clamp substrates by vacuum pressures, respectively, and that are located at different heights, a vacuum pressure supply unit that supplies the vacuum pressures to the transport hands, and a controller that controls the vacuum pressure supply unit to supply the vacuum pressures to the transport hands or interrupt the supply of the vacuum pressures to the transport hands. The controller controls the vacuum pressure supply unit such that the vacuum pressures of the transport hands are turned off at the same height from a substrate support member.

A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.

A method of forming a three-dimensional object is carried out by: (a) providing a carrier and an optically transparent member having a build surface, the carrier and the build surface defining a build region therebetween; (b) filling the build region with a polymerizable liquid, the polymerizable liquid including a mixture of (i) a light polymerizable liquid first component, and (ii) a second solidifiable component that is different from the first component; (c) irradiating the build region with light through the optically transparent member to form a solid polymer scaffold from the first component and also advancing the carrier away from the build surface to form a three-dimensional intermediate having the same shape as, or a shape to be imparted to, the three-dimensional object, and containing the second solidifiable component carried in the scaffold in unsolidified and/or uncured form; and (d) concurrently with or subsequent to the irradiating step, solidifying and/or curing the second solidifiable component in the three-dimensional intermediate to form the three-dimensional object.