A semiconductor structure, a method for manufacturing the same and a memory are provided. The semiconductor structure at least includes two photolithography layers which are arranged in sequence and at least one blocking layer. Each photolithography layer includes a functional pattern and an overlay mark, and the photolithography layers include a first photolithography layer and a second photolithography layer. The first photolithography layer includes a first functional pattern and a first overlay mark, and the second photolithography layer includes a second functional pattern and a second overlay mark; and at least one blocking layer. The blocking layer is located between the first functional pattern and the second functional pattern, and a vertical distance between the first functional pattern and the second functional pattern is greater than a vertical distance between the first and second overlay marks, in a stacking direction of the photolithography layers.

A structure and method for providing alignment aids that are co-fabricated with the optical emission output from a laser pedestal are described. In embodiments, the alignment aids are formed using processes and masking layers that produce a ridge waveguide laser structure. The use of same masking processes for the laser and the alignment aids provides lithographic level precision in the positioning of the alignment aids in relation to the optical output from the laser device. Optoelectrical die formed with the alignment aids may be used with complementary interposer structures to enable alignment of optical output from lasers formed on the optoelectrical die with optical devices on the interposer.

A method and system for optimizing forces applied to actuators during a nanoimprint lithography process is provided. A first set of forces within a first set of force limits is selected to be applied to edges of a template. A first residual distortion representative of a first predicted overlay error associated with a simulated imprinting method in which the first set of forces are applied to the edges of the template is estimated. A second set of forces is selected within a second set of force limits to be applied to the edges of the template. A second residual distortion is estimated that is representative of a second predicted overlay error associated with the simulated imprinting method in which the second set of forces are applied to edges of the template. An initial set of forces having a narrowest set of force limits and residual distortion that is below a residual threshold from among the first set of forces and the second set of forces is selected.

A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

Three-dimensional printing methods and systems use a derived geometry and aligns anisotropic inclusions in any orientation at any number of discrete volumetric sections. Structural, thermal, or geometry-based analyses are combined with inclusion alignment computations and print preparation methods and provided to 3D printers to produce composite material parts that meet demanding geometric needs as well as enhanced structural and thermal requirements. In one example, optimal inclusion alignment vectors associated with a section of the object are calculated based on specifications for the object, segmenting a three-dimensional model of the object into layer slices, grouping each section within each layer slice having similar alignment vectors and combining the groupings and generating printing instructions for the object according to the grouped alignment vectors.

Devices, systems, and methods (a) receive a field material map that represents of a spatial distribution of a volume of a material over a rectangular region; (b) divide the rectangular region into two rectangular child regions along a division axis; (c) determine if the material volume in each rectangular child region is within a range of a specific volume; (d) for each rectangular child region that is not within the range of the specific volume, perform (b) for each rectangular child region as the rectangular region along a division axis that has been rotated by 90 degrees relative to the division axis that was used to generate the rectangular child region; (e) repeat (b)-(d) until all rectangular child regions meet the criteria in (c); and (f) output a drop pattern that includes one or more drop locations inside each rectangular child region that meets the criteria in (c).

Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

The present disclosure relates to a semiconductor mark and a forming method thereof. The semiconductor mark comprises: a previous layer mark comprising first patterns and at least one second pattern, the second pattern being located between adjacent first patterns, the first pattern being different from the second pattern in material property. Since the first pattern and the second pattern in the previous layer mark in the semiconductor mark according to the present disclosure are different in material property, during measurement, the first pattern and the second pattern are different in reflectivity for measurement light. Thus, the contrast of images of the first pattern and the second pattern obtained during measurement is improved, the positions and boundaries of the first pattern and the second pattern are clearly determined, and the measurement of the previous layer mark is more accurate.

A method for aligning a substrate for fabrication of an optical device is disclosed that includes receiving a substrate having a first side and a second side opposite the first side, the first side of the substrate being oriented towards a scanner, the substrate having an alignment mark formed on the first side of the substrate, scanning the alignment mark with the scanner, and fabricating a first pattern for a first optical device on the first side of the substrate. The method includes positioning the substrate such that the second side is oriented toward the scanner, scanning the alignment mark on the first side with the scanner, through the second side, and fabricating a second pattern for a fourth optical device on the second side of the substrate.