A memory system includes a nonvolatile memory and a controller. The nonvolatile memory has first regions in which data writes and data reads can be executed in parallel. Each of the first regions has second regions which are each a data write/read unit. The controller acquires first values indicating a data write load for each of the first regions, detects a first region having a first value greater than or equal to a first threshold, acquires second values indicating a data write load for each of the plurality of second regions in the detected first region, detects a second region having a second value greater than or equal to a second threshold but less than or equal to a third threshold that is higher than the second threshold, and then move data from the detected second region to a second region in another first region.

A memory built-in device according to the present disclosure is a memory built-in device including a processor; a memory access controller; and a memory to be accessed in accordance with a process by the memory access controller, wherein the memory access controller is configured to read and write data to be used in an operation of a convolution arithmetic circuit from and to the memory according to designation of a parameter.

An object is to reduce the number of writes of information managed by a controller to a non-volatile memory. A controller according to one aspect of the present invention includes: a first interface unit connected to a non-volatile memory including a plurality of blocks of memory cells that enter into both a first state and a second state and in which a plurality of addresses is allocated to the plurality of blocks; an information holding unit that holds first information; and a control unit that reads first data from a first block of the non-volatile memory via the first interface unit, specifies the memory cell in the second state among the memory cells in the first block and writes second data for causing the specified memory cell in the second state to transition to the first state, and selects one of the first information and the first data on the basis of the address of the first block and writes the selected first information or first data to the first block.

According to one embodiment, a memory device includes a first nonvolatile memory die, a second nonvolatile memory die, a controller, and a first temperature sensor and a second temperature sensor incorporated respectively in the first nonvolatile memory die and the second nonvolatile memory die. The controller reads temperatures measured by the first and second temperature sensors, from the first and second nonvolatile memory dies. When at least one of the temperatures read from the first and second nonvolatile memory dies is equal to or higher than a threshold temperature, the controller reduces a frequency of issue of commands to the first and second nonvolatile memory dies or a seed of access to the first and second nonvolatile memory dies.

A storage device includes a storage device communicably connected to a host; a nonvolatile memory configured to store calibration data of the host; and a calibration circuit configured to receive a descriptor from the host including the setting information and update the calibration data with the received setting information.

A variety of applications can include memory systems that have one or more memory devices capable of performing memory operations on multiple blocks of memory in response to a command from a host. For example, improvement in erase performance can be attained by erasing multiple blocks of memory by one of a number of approaches. Such approaches can include parallel erasure followed by serial verification in response to a single command. Other approaches can include sequential erase and verify operations of the multiple blocks in response to a single command. Additional apparatus, systems, and methods are disclosed.

An embodiment of an electronic apparatus may include one or more substrates, and logic coupled to the one or more substrates, the logic to determine a set of requirements for a persistent storage media based on input from an agent, dedicate one or more banks of the persistent storage media to the agent based on the set of requirements, and configure at least one of the dedicated one or more banks of the persistent storage media at a program mode width which is narrower than a native maximum program mode width for the persistent storage media. Other embodiments are disclosed and claimed.

The present teaching relates to a method, system and programming for operating a data storage. The data storage comprises of different portions including: a first portion having a plurality of metadata objects stored therein, each of the metadata objects being associated with a filter and corresponding to a range of keys, wherein at least one of the metadata objects is associated with a data structure, and a second portion having a plurality of files stored therein, each of the plurality of files being associated with one of the plurality of metadata objects; The data storage synchronizes a scan request with respect to one or more write requests based on a parameter associated with the scan request and each of the one or more write requests.

A memory sub-system can receive a definition of a performance target for each of a number of applications that use the memory sub-system for storage. The memory sub-system can create a plurality of partitions according to the definitions and assign each of the partitions to a block group. The memory sub-system can operate each block group with a trim tailored to the performance target corresponding to that block group and application.

A data storage device, in one implementation, includes a memory device having Single Level Cell (SLC) blocks and Multi-Level Cell (MLC) blocks, such as Triple Level Cell (TLC) blocks. If a SLC block is determined to have errors, the SLC block is reallocated as a TLC block. In some implementations, the TLC block is used to store TLC cold data.