Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.

A semiconductor device includes a first buffer circuit configured to generate a first internal chip select signal by buffering a chip select signal in response to a buffer control signal; a second buffer circuit configured to generate a second internal chip select signal by buffering the chip select signal in response to the buffer control signal; and a control circuit configured to generate the buffer control signal by sensing logic levels of a reset signal and the second internal chip select signal, and generate an initialization signal which is enabled during an initializing operation period, in response to the reset signal and the buffer control signal.

The subject technology performs the following in a storage system including memory dies, where each memory die includes its own temperature sensor. The subject technology determines a temperature of each of the memory dies based on a temperature reading from each memory die's temperature sensor. The subject technology determines whether data is hot data or cold data, where hot data is more likely to be changed after it is written than cold data. In response to determining that the data is hot data, the subject technology stores the data in a memory die with a relatively higher temperature than another one of the memory dies. Further, in response to determining that the data is cold data, the subject technology stores the data in a memory die with a relatively cooler temperature than another one of the memory dies.

A method of operating a data storage system is provided. The method includes establishing a user region on a non-volatile storage media of the data storage system configured to store user data, and establishing a recovery region on the non-volatile storage media of the data storage system configured to store recovery information pertaining to at least the user region. The method also includes updating the recovery information in the recovery region responsive to at least changes to the user region, and responsive to at least a power interruption of the data storage system, rebuilding at least a portion of the user region using the recovery information retrieved from the recovery region.

A semiconductor memory having a memory cell structure capable of reducing soft error without complicating a circuit configuration. Specifically, an inverter (I1) consists of a NMOS transistor (N1) and a PMOS transistor (P1), and an inverter (I2) consists of a NMOS transistor (N2) and a PMOS transistor (P2). The inverters (I1, I2) are subjected to cross section. The NMOS transistor (N1) is formed within a P well region (PW0), and the NMOS transistor (N2) is formed within a P well region (PW1). The P well regions (PW0, PW1) are oppositely disposed with an N well region (NW) interposed therebetween.

A data line control circuit has a data line driving circuit and a write-assist data line driving circuit. The data line driving circuit is used to drive differential data lines during a write operation of at least one memory cell. The write-assist data line driving circuit is used to drive at least one write-assist data line during the write operation of the at least one memory cell, wherein the at least one write-assist data line is isolated from the differential data lines, and is driven to have a first voltage transition from a first voltage level to a second voltage level, such that one of the differential data lines has a second voltage transition from a third voltage level to a fourth voltage level that is induced by the first voltage transition via capacitive coupling.

A data line control circuit has a data line driving circuit and a write-assist data line driving circuit. The data line driving circuit is used to drive differential data lines during a write operation of at least one memory cell. The write-assist data line driving circuit is used to drive at least one write-assist data line during the write operation of the at least one memory cell, wherein the at least one write-assist data line is isolated from the differential data lines, and is driven to have a first voltage transition from a first voltage level to a second voltage level, such that one of the differential data lines has a second voltage transition from a third voltage level to a fourth voltage level that is induced by the first voltage transition via capacitive coupling.

A layered semiconductor device capable of improving production yield and a method for producing the layered semiconductor device. The layered semiconductor device has, layered therein, a plurality of semiconductor chips, a reserve semiconductor chip which is used as a reserve for the semiconductor chips, and a control chip for controlling the operating states of the plurality of semiconductor chips and the operating state of the reserve semiconductor chip. The semiconductor chips and the reserve semiconductor chip include contactless communication units and operating switches, and are capable of contactlessly communicating with another of the semiconductor chips via the contactless communication units. The control chip controls the operating states of the semiconductor chips by switching the operating switches of the semiconductor chips, and controls the operating state of the reserve semiconductor chip by switching the operating switch of the reserve semiconductor chip.

A data storage drive includes a memory and a controller communicatively coupled to the memory. A casing encloses the controller and the memory. At least one electrically conductive grounding pad is included on an exterior of the casing. The electrically conductive grounding pad forms a portion of a low impedance path that extends from the grounding pad to a system ground in an interior of the data storage drive. The low impedance path prevents a build-up of static electricity.

Technology that provides security for a requestor of data stored in a non-volatile memory device is disclosed. In one aspect, the non-volatile memory device provides data on a host interface only if a digest for the data matches an expected digest for the data. The non-volatile memory device may store expected digests for data for various logical addresses. Upon receiving a request on the host interface to read data for a logical address, the non-volatile memory device may access the data for the logical address, compute a digest for the accessed data, and compare the computed digest with the expected digest. The non-volatile memory device provides the accessed data on the host interface only if the computed digest matches the expected digest, in one aspect. The non-volatile memory device may be used to provide a secure boot of a host.