A memory controller capable of sequentially increasing or decreasing a total current consumed by a plurality of memory devices, controls a plurality of memory devices coupled through a plurality of channels. The memory controller includes a request checker for identifying memory devices corresponding to requests received from a host among the plurality of memory devices, and generating the identified device information on memory devices to perform operations corresponding to the requests; a dummy manager for outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator for sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse.

According to one embodiment, a semiconductor memory device includes first and second memory cells, first and second word lines, and a bit line. The first and second memory cells are coupled to each other and adjacent to each other. When a state of the second memory cell is the first state or one of the states corresponding to a lower threshold voltage distribution than that of the first state, the first memory cell data is read in a first period during which a first voltage is applied to the second word line. And when the state of the second memory cell is the second state or one of the states corresponding to a higher threshold voltage distribution than the second state, the first memory cell data is read in a second period during which a second voltage higher than the first voltage is applied to the second word line.

According to one embodiment, a memory device includes first and second lines, a memory cell connected between the first and second lines, and including a resistance change memory element and a switching element, a current supply circuit supplying write current to the memory cell when data is written to the resistance change memory element, a detection circuit detecting an on state of the switching element after supply operation of the write current is enabled, and a control circuit controlling a time required until supplying the write current from the current supply circuit is stopped, wherein a starting point of the controlling the time is a time point at which the on state of the switching element is detected.

Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.

Systems, apparatuses and methods may provide for technology that reads a lower page, one or more intermediate pages and a last page from a set of multi-level non-volatile memory (NVM) cells, wherein one or more of a lower read time associated with the lower page or a last read time associated with the last page is substantially similar to an intermediate read time associated with the one or more intermediate pages.

A method to access a memory chip having memory banks includes processing read requests in a read queue, and when a write queue is filled beyond a high watermark, stopping the processing of the read requests in the read queue and draining the write queue until the write queue is under a low watermark. Draining the write queue include issuing write requests in an order based on information in the read queue. When the write queue is under the low watermark, the method includes stopping the draining of the write queue and again processing the read requests in the read queue.

Circuits and methods are described for a DDR memory controller where two different DQS gating modes are utilized. These gating modes together ensure that the DQS signal, driven by a DDR memory to the memory controller, is only available when read data is valid. Two types of gating logic are used: Initial DQS gating logic, and Functional DQS gating logic. The Initial gating logic has additional timing margin in the Initial DQS gating value to allow for the unknown round trip timing during initial bit levelling calibration. DQS functional gating is then optimized during further calibration to gate DQS precisely as latency and phase calibration are performed, resulting in a precise gating value for Functional DQS gating. Providing dual gating modes is especially useful when data capture is performed at half the DQS frequency in view of rising clock rates for DDR memories.

A memory device includes a memory array with memory cells arranged in rows and columns and with word lines and bit lines. A dummy structure includes a dummy row of dummy cells and a dummy word line. A first pre-charging stage biases a word line of the memory array. An output stage includes a plurality of sense amplifiers. Each sense amplifier generates a corresponding output signal representing a datum stored in a corresponding memory cell pre-charged by the first pre-charging stage. A second pre-charging stage biases the dummy word line simultaneously with the word line biased by the first pre-charging stage. The output stage includes an enable stage, which detects a state of complete pre-charging of an intermediate dummy cell.

An electronic circuit includes an adaptive delay circuit and a test circuit. The adaptive delay circuit is configured to receive an input clock signal, to further receive a delay setting that specifies first and second delays, and to generate first and second delayed versions of the input clock signal that are delayed relative to the input clock signal by the first and second delays, respectively. The test circuit is configured to test the adaptive delay circuit by (i) programming the adaptive delay circuit with multiple different delay settings that each specifies a respective first delay and a respective second delay, (ii) for each of the multiple delay settings, measuring an actual time offset between the first and second delayed versions of the input clock signal, and (iii) generating a test result based on actual time offsets measured for the multiple different delay settings.

Apparatuses for memory repair for a memory device are described. An example apparatus includes: a non-volatile storage element that stores information; a storage latch circuit coupled to the non-volatile storage element and stores latch information; and a control circuit that, in a first repair mode, receives first repair address information, provides the first repair address information to the non-volatile storage element, and further transmits the first repair address information from the non-volatile storage element to the storage latch circuit. The control circuit, in a second repair mode, receives second repair address information and provides the second repair address information to the storage latch circuit and disables storing the second address information into the non-volatile storage element.