Embodiments of the present disclosure provide a storage system, including a distribution apparatus and a storage device; the storage device includes at least two storage controllers and multiple storage units, where each storage unit is configured with any one of the at least two storage controllers as a home storage controller; and the distribution apparatus includes a front-end interface and at least two back-end interfaces, where the front-end interface is configured to connect to a host device, and each back-end interface is connected to each storage controller in a one-to-one correspondence manner. According to the technical solutions provided in the present disclosure, the distribution apparatus parses an IO read/write instruction, so that the IO read/write instruction can be accurately sent to the home storage controller, which avoids forwarding the IO read/write instruction between the storage controllers, thereby improving IO processing efficiency of the storage system.

An apparatus including a Correlated Electron Switch (CES) element and a programing circuit is provided. The programing circuit provides a programing signal to the CES element to program the CES element to an impedance state of multiple impedance states when a number of times the CES element has been programed is less than a threshold.

An apparatus including a Correlated Electron Switch (CES) element and a programing circuit is provided. The programing circuit provides a programing signal to the CES element to program the CES element to an impedance state of multiple impedance states when a number of times the CES element has been programed is less than a threshold.

Methods for providing redundancy in a memory include mapping a portion of first data associated with an address of the memory determined to indicate a defective memory cell to an address of a redundant area of the memory array, and writing second data to the memory array, wherein a portion of the second data is written to a column of the memory array associated with the address of the memory determined to indicate a defective memory cell for the first data.

Apparatuses and methods involving accessing distributed sub-blocks of memory cells are described. In one such method, distributed sub-blocks of memory cells in a memory array are enabled to be accessed at the same time. Additional embodiments are described.

Apparatuses and methods involving accessing distributed sub-blocks of memory cells are described. In one such method, distributed sub-blocks of memory cells in a memory array are enabled to be accessed at the same time. Additional embodiments are described.

A data recorder for permanently storing pre-event data may include a read-write memory with a plurality of bit cells in the read-write memory. Each bit cell may have a bit state of a high value or a low value. A fusible structure in the data recorder may include a morphable element associated with each bit cell. A temperature-triggered module may thermally couple to the ambient environment and may electrically couple to each morphable element. The temperature-triggered module may be further configured to determine if a parameter of the ambient environment exceeds a predetermined threshold, and if so may then transmit a burn signal to the fusible structure so that each morphable element permanently secures the bit state for each bit cell.

The invention pertains to semiconductor memories, and more particularly to enhancing the reliability of stacked memory devices. Apparatuses and methods are described for implementing RAID-style error correction to increase the reliability of the stacked memory devices.

Systems, methods, and computer programs for providing row tamper protection in a multi-bank memory cell array. One method comprises monitoring row activation activity for each of a plurality of banks in a multi-bank memory cell array. In response to monitoring the row activation activity, a row activation counter table is stored in a memory. The row activation counter table comprises a plurality of row address entries, each row address entry having a corresponding row activation counter. In response to detecting one of the plurality of row activation counters has exceeded a threshold indicating suspicious row tampering, the corresponding row address entry associated with the row activation counter exceeding the threshold is determined. A refresh operation is performed on one or more rows adjacent to the row address having the row activation counter exceeding the threshold.

Main memory access from a CPU is reduced, and thus an increase in speed of data processing is achieved. Provided is a reconfigurable device (20) connected to a main memory (600). The reconfigurable device (20) includes a plurality of logic sections connected to each other by an address line or a data line. Each of the logic sections includes a plurality of address lines, a plurality of data lines, an address decoder that decodes addresses input from part of the plurality of address lines, and a memory cell array unit that includes a plurality of memory cells specified by decode lines of the address decoder, and outputs data read from the specified memory cells to the data lines. An address line of the memory cell array unit is connected to a data output line (RD1) of the main memory.