Patent classifications
G11C7/00
Non-volatile, solid-state memory configured to perform logical combination of two or more blocks sharing series-connected bit lines
First and second data representation are stored in first and second blocks of a non-volatile, solid-state memory. The first and second blocks share series-connected bit lines. The first and second blocks are selected and other blocks of the non-volatile, solid-state memory that share the bit lines are deselected. The bit lines are read to determine a combination of the first and second data representations. The combination may include a union or an intersection.
Non-volatile, solid-state memory configured to perform logical combination of two or more blocks sharing series-connected bit lines
First and second data representation are stored in first and second blocks of a non-volatile, solid-state memory. The first and second blocks share series-connected bit lines. The first and second blocks are selected and other blocks of the non-volatile, solid-state memory that share the bit lines are deselected. The bit lines are read to determine a combination of the first and second data representations. The combination may include a union or an intersection.
Integrated circuits with built-in self test mechanism
An embodiment of the invention provides an integrated circuit including a core circuit and a memory. The core circuit executes operations of the integrated circuit. The memory stores a subsystem and a repair system. When the repair system runs, the repair system detects whether there is a defect in the memory. When the repair system detects the defect, the repair system repairs the defect, and when the repair system does not detect the defect, a fake defect is injected in the memory to verify whether the repair system runs correctly.
Precharging and refreshing banks in memory device with bank group architecture
Memory subsystem refresh management enables commands to access one or more identified banks across different bank groups with a single command. Instead of sending commands identifying a bank or banks in separate bank groups by each bank group individually, the command can cause the memory device to access banks in different bank groups. The command can be a refresh command. The command can be a precharge command.
TIMED SENSE AMPLIFIER CIRCUITS AND METHODS IN A SEMICONDUCTOR MEMORY
A memory includes a memory cell, one bitline coupled to the memory cell, a sense amplifier coupled to the one bitline, a timing circuit configured to enable the sense amplifier during a read operation, a control circuit configured to enable the sense amplifier independent of the timing circuit, and a pull-up circuit configured to pull up the one bitline while the sense amplifier is enabled by the control circuit. The method includes enabling a sense amplifier in a read operation by a timing circuit. The sense amplifier is coupled to at least one bitline, and the at least one bitline is coupled to a memory cell. The method further includes enabling the sense amplifier independent of the timing circuit in a second operation and pulling up the at least one bitline by a pull-up circuit while the sense amplifier is enabled in the second operation.
Embedded guard-sanitizer
An embedded guard-sanitizer apparatus is disclosed including a processor, a volatile, high-to-low working memory partition connected to the processor, and a volatile, low-to-high working memory partition connected to the processor. The embedded guard-sanitizer further includes a high-side, input/output section providing an interface to a high-side network or data bus, and configured to send messages to the high-to-low working memory, and to receive messages from the low-to-high working memory, and a low-side, input/output section providing an interface to a low-side network or data bus, and configured to send messages to the low-to-high working memory, and to receive messages from the high-to-low working memory. The embedded guard-sanitizer also includes a first non-volatile memory for storing a rule set binary image, whereby the processor controls the transfer of messages between the high-side input/output section and the low-side input/output section in accordance with the rule set, and a second non-volatile, memory for storing firmware for controlling executive functions of the apparatus.
Protocol for memory power-mode control
In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
Memory read apparatus and methods
Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.
Semiconductor integrated circuit including at least one master chip and at least one slave chip
A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip.
Providing power availability information to memory
The present disclosure includes apparatuses and methods for providing power availability information to memory. A number of embodiments include a memory and a controller. The controller is configured to provide power and power availability information to the memory, and the memory is configured to determine whether to adjust its operation based, at least in part, on the power availability information.