A memory array includes a plurality of column segments, each column segment including a plurality of columns of memory cells, a plurality of sense amplifiers selectively coupled to each column of the plurality of columns of a corresponding column segment, pluralities of first and second reference cells, and a reference current circuit. The reference current circuit generates a reference current based on a first current generated by a first reference cell programmed to a low logical value and a second current generated by a second reference cell programmed to a high logical value. Each sense amplifier generates a mirror current based on the reference current, and a logical value based on a comparison of the mirror current to a cell current received from a memory cell of a column of the plurality of columns of the corresponding column segment.

A memory array includes a plurality of column segments, each column segment including a plurality of columns of memory cells, a plurality of sense amplifiers selectively coupled to each column of the plurality of columns of a corresponding column segment, pluralities of first and second reference cells, and a reference current circuit. The reference current circuit generates a reference current based on a first current generated by a first reference cell programmed to a low logical value and a second current generated by a second reference cell programmed to a high logical value. Each sense amplifier generates a mirror current based on the reference current, and a logical value based on a comparison of the mirror current to a cell current received from a memory cell of a column of the plurality of columns of the corresponding column segment.

Various implementations described herein are directed to a device having memory control circuitry having global passgates and a read-write driver that provides a global read-write signal to the global passgates. The device may have sense amplifier circuitry with local-drivers and a sense amplifier driver that provides a sense amplifier enable signal to the local-drivers, wherein the local-drivers may include multiple buffers coupled to the sense amplifier driver in parallel.

Shift register includes input sub-circuit coupling input terminal to first node responsive to signal of first clock terminal in input stage, control sub-circuit transmitting signal of second clock terminal to intermediate output terminal according to level at first node and controlling potential of third node according to potential of intermediate output terminal and signal of third clock terminal in input, output and reset stages, pull-up sub-circuit coupling second level terminal to final output terminal responsive to potential of intermediate output terminal in output stage, first voltage stabilization sub-circuit stabilizing voltage between final output terminal and third node responsive to signal of next-stage node connection terminal, pull-down transistor having gate electrode coupled to third node, first electrode coupled to first level terminal, and second electrode coupled to final output terminal. First voltage stabilization sub-circuit lowers potential of third node to level lower than signal of first level terminal in reset stage.

Apparatuses and methods for pure-time, self-adopt sampling for RHR refresh. An example apparatus includes a memory bank comprising a plurality of rows each associated with a respective row address, and a sampling timing generator circuit configured to provide a timing signal having a plurality of pulses. Each of the plurality of pulses is configured to initiate sampling of a respective row address associated with a row of the plurality of rows to detect a row hammer attack. The sampling timing generator includes first circuitry configured to provide a first subset of pulses of the plurality of pulses during a first time period and includes second circuitry configured to initiate provision of a second subset of pulses of the plurality of pulses during a second time period after the first time period.

A memory device and an operation method thereof are provided. The memory device comprises: a memory array; a decoding circuit coupled to the memory array, the decoding circuit including a plurality of first transistors, a plurality of second transistors and a plurality of inverters, the first transistors and the second transistors are paired; and a controller coupled to the decoding circuit, wherein the paired first transistors and the paired second transistors are respectively coupled to a corresponding one inverter among the inverters, and respectively coupled to a corresponding one among a plurality of local bit lines or a corresponding one among a plurality of local source lines; the first transistors are coupled to a global bit line; and the second transistors are coupled to a global source line.

Disclosed herein is an apparatus that includes a plurality of memory sections each including a plurality of word lines, a predecoder circuit configured to generate predecoded section address signals to select one of the plurality of memory sections and predecoded word line address signals to select one of the word lines included in a selected one of the plurality of memory sections based on a row address, and a section address control circuit configured to retain the predecoded section address signals regardless of an update of the row address in a test operation mode.

A memory device includes a memory area configured to store data, a data input/output (I/O) part configured to receive and output data through an external bus, an I/O buffering part coupled between the memory area and the data I/O part to store data outputted from the memory area, and a first internal data transmission line providing a data transmission path between the memory area and the I/O buffering part and having a first bandwidth which is greater than a bandwidth of the external bus, Data transmission between the memory area and the I/O buffering part through the first internal data transmission line is executed using a portion of the first bandwidth in a first operation mode and is executed using all of the first bandwidth in a second operation mode.

A level shifter circuit to convert a first signal having an input voltage range V1 to a level shifted output having an output voltage range V2 includes an NMOS depletion mode transistor having a drain terminal connected to an output range upper-level supply node, a source connected to an intermediate node and a gate connected to an output node, a PMOS enhancement mode transistor having a drain terminal connected to the output node, a source connected to the intermediate node and a gate connected to an input node, and an NMOS enhancement mode transistor having a drain terminal connected to the output node, a source connected to an output range lower-level supply node and a gate connected to the input node.

Embodiments of the disclosure are drawn to apparatuses and methods for scheduling targeted refreshes in a memory device. Memory cells in a memory device may be volatile and may need to be periodically refreshed as part of an auto-refresh operation. In addition, certain rows may experience faster degradation, and may need to undergo targeted refresh operations, where a specific targeted refresh address is provided and refreshed. The rate at which targeted refresh operations need to occur may be based on the rate at which memory cells are accessed. The memory device may monitor accesses to a bank of the memory, and may use a count of the accesses to determine if an auto-refresh address or a targeted refresh address will be refreshed.