Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.

A processing device of a system receives a request to access a selected sector in a memory component. The selected sector is associated with a sector number. The processing device determines a virtual block corresponding to the selected sector. The virtual block is associated with a misalignment factor and a misalignment counter. The processing device determines if the misalignment counter satisfies a threshold criterion. In response to the misalignment counter satisfying the threshold criterion, the processing device generates an updated sector number by shifting the sector number by the misalignment factor and performs the access to the selected sector using the updated sector number. In response to the misalignment counter not satisfying the threshold criterion, the processing device updates the misalignment counter and performs the access to the selected sector using the sector number.

A processing device of a system receives a request to access a selected sector in a memory component. The selected sector is associated with a sector number. The processing device determines a virtual block corresponding to the selected sector. The virtual block is associated with a misalignment factor and a misalignment counter. The processing device determines if the misalignment counter satisfies a threshold criterion. In response to the misalignment counter satisfying the threshold criterion, the processing device generates an updated sector number by shifting the sector number by the misalignment factor and performs the access to the selected sector using the updated sector number. In response to the misalignment counter not satisfying the threshold criterion, the processing device updates the misalignment counter and performs the access to the selected sector using the sector number.

A memory circuit includes a first memory circuit formed of a first die or a set of stacked dies. The memory circuit further includes a second memory circuit formed of a second die, the second memory circuit comprising one or more sets of memory cells of a second type and each set of the memory cells of the second type comprising multiple cache sections. The first die or the set of stacked dies are stacked over the second die, wherein the second die further includes a first plurality of I/O terminals and a second plurality of I/O terminals, the first plurality of I/O terminals being electrically coupled to the first memory circuit, and the second plurality of I/O terminals being electrically isolated from the first memory circuit.

A memory system includes: a memory device suitable for storing a data; a controller suitable for controlling an operation of the memory device based on a control signal; and an interface device includes a signal transfer device suitable for transferring the control signal from the controller to the memory device and transferring the data between the memory device and the controller; and a signal control device suitable for controlling an operation of the signal transfer device in response to an interface control signal included in the control signal, wherein the interface control signal includes a blocking command for stopping an operation of the signal transfer device, a correction command for correcting a duty cycle of the control signal, and an unblocking command for resuming the operation in response to the corrected control signal, of the signal transfer device.

Various implementations described herein are related to a device having a bitcell. The device may include horizontal bitlines coupled to the bitcell. The horizontal bitlines may include multiple first read bitlines disposed in a horizontal direction with respect to the bitcell. The device may include vertical bitlines coupled to the bitcell. The vertical bitlines may include multiple second read bitlines disposed in a vertical direction with respect to the bitcell.

Memory devices may have an array of elements in two or more dimensions. The memory devices use multiple access lines arranged in a grid to access the memory devices. Memory cells located at intersections of the access lines in the grid. Drivers are used for each access line and configured to transmit a corresponding signal to respective memory cells of the plurality of memory cells via a corresponding access line. The memory devices uses an electrical distance calculator to determine an electrical distance from a memory cell to a respective driver of the plurality of drivers. The memory device also uses a driver modulator to modulate the corresponding signal based at least in part on the electrical distance.

A semiconductor memory instance is provided that includes an array of memory cells. The array includes a plurality of semiconductor memory cells arranged in at least one column and at least one row. Each of the semiconductor memory cells includes a floating body region configured to be charged to a level indicative of a state of the memory cell. Further includes are a plurality of buried well regions, wherein each of the buried well regions can be individually selected, and a decoder circuit to select at least one of the buried well regions.

Methods, systems, and devices for driver sharing between banks or portions of banks of memory devices are described. An apparatus may include a first bank and a second bank of memory cells and a word line driver configured to activate word lines. The word line driver may include a master word line driver and an address driver. In some examples, the master word line driver may be configured to generate a first signal to a first portion of the first bank or a second portion of the first bank as part of performing an access operation. In some examples, the master word line driver may be configured to generate a first signal for the first bank or the second bank as part of performing an access operation. The address driver configured to generate a second signal to a portion of the first bank or the second bank.

Apparatuses, systems, and methods for data strobe write timing. A memory device may receive a data strobe clock signal and serial write data during a write operation. A deserializer circuit of the memory may convert the serial write data into parallel write data using timing based on the data strobe clock signal. For example, one or more internal signals may be generated based on the data strobe clock signal and used to activate various operations of the deserializer circuit. The data strobe clock signal may also be used to activate bit lines of the memory device in order to write the parallel write data to memory cells along those activated bit lines. The memory may also receive a system clock, separate from the data strobe clock signal, which may be used for other operations of the memory. For example, in a read operation, the bit lines may be activated with timing based on the system clock.