Methods, systems, and devices for decoding for a memory device are described. A decoder of a memory device may include transistors in a first layer between a memory array and a second layer that includes one or more components associated with the memory array. The second layer may include CMOS pre-decoding circuitry, among other components. The decoder may include CMOS transistors in the first layer. The CMOS transistors may control which voltage source is coupled with an access line based on a gate voltage applied to a p-type transistor and a n-type transistor. For example, a first gate voltage applied to a p-type transistor may couple a source node with the access line and bias the access line to a source voltage. A second gate voltage applied to the n-type transistor may couple a ground node with the access line and bias the access line to a ground voltage.

Systems and methods are provided for controlling a sleep operation for a memory array. A memory system may include a memory array with a memory cell and a word line driver, the memory array receiving a word line clock signal that enables and disables memory read and write operations of the memory cell. The memory array may further including a switching circuit coupled between the word line driver and a power source, the switching circuit being controlled by a local word line sleep signal to turn power to the word line driver on and off. A latch circuit may generate the local word line sleep signal in response to a delayed clock signal and one or more power management control signals. The word line clock signal and the delayed clock signal may both being generated as a function of a memory clock signal. The latch circuit may synchronize the local word line sleep signal with the delayed clock signal such that the local word line sleep signal is prevented from turning off power to the word line driver until memory read and write operations of the memory cell are disabled by the word line clock signal.

An exemplary memory is configurable to operate in a low latency mode through use of a low latency register circuit to execute a read or write command, rather performing a memory army access to execute the read or write command. A control circuit determines whether an access command should be performed using the low latency mode of operation (e.g., first mode of operation) or a normal mode of operation (e.g., second mode of operation). In some examples, a processor unit directs the memory to execute an access command using the low latency mode of operation via one or more bits (e.g., a low latency enable bit) included in the command and address information.

Methods, systems, and devices for thin film transistor deck selection in a memory device are described. A memory device may include memory arrays arranged in a stack of decks formed over a substrate, and deck selection components distributed among the layers to leverage common substrate-based circuitry. For example, each memory array of the stack may include a set of digit lines of a corresponding deck, and deck selection circuitry operable to couple the set of digit lines with a column decoder that is shared among multiple decks. To access memory cells of a selected memory array on one deck, the deck selection circuitry corresponding to the memory array may each be activated, while the deck selection circuitry corresponding to a non-selected memory array on another deck may be deactivated. The deck selection circuitry, such as transistors, may leverage thin-film manufacturing techniques, such as various techniques for forming vertical transistors.

A sense amplifier can be formed outside of/horizontally adjacent to an array of vertically stacked tiers of memory cells. Memory cells can be sensed via multiplexors formed under the array that can operate to couple vertical sense lines (to which the memory cells are coupled) to horizontal sense lines (to which the sense amplifier is coupled).

Disclosed herein is an apparatus that includes a first shift register circuit including a plurality of first latch circuits coupled in series, and a second shift register circuit including a plurality of second latch circuits coupled in series. The first and second shift register circuits are cyclically coupled. Each of the first latch circuits is configured to perform the latch operation in synchronization with a rise edge of a first clock signal. Each of the second latch circuits is configured to perform the latch operation in synchronization with a fall edge of a first clock signal when a first selection signal is in a first state. One or more first latch circuits and one or more second latch circuits are configured to be bypassed when a second selection signal indicates a predetermined value.

Systems and methods are provided to enhance the functionality of an integrated circuit. Such an integrated circuit may include a primary circuitry and an embedded programmable logic programmable to adjust the functionality of the primary circuitry. Specifically, the embedded programmable logic may be programmed to adjust the functionality of the primary circuitry to complement and/or support the functionality of another integrated circuit. Accordingly, the embedded programmable logic may be programmed with functions such as data/address manipulation functions, configuration/testing functions, computational functions, or the like.

Systems and methods are provided to enhance the functionality of an integrated circuit. Such an integrated circuit may include a primary circuitry and an embedded programmable logic programmable to adjust the functionality of the primary circuitry. Specifically, the embedded programmable logic may be programmed to adjust the functionality of the primary circuitry to complement and/or support the functionality of another integrated circuit. Accordingly, the embedded programmable logic may be programmed with functions such as data/address manipulation functions, configuration/testing functions, computational functions, or the like.

According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.