Technologies relating to analog-to-analog quantizers with an intrinsic Rectified Linear Unit (ReLU) function designed for in-memory computing are disclosed. An apparatus, in some implementations, includes: a DAC; a first crossbar connected to the DAC; a first analog quantizer connected to the first crossbar; a buffer connected to the first analog quantizer; a second crossbar connected to the buffer; and an ADC connected to the second crossbar.

An integrated circuit device can include a plurality of nonvolatile memory elements having values that vary randomly or pseudo-randomly from one another; a selection circuit configured to select a plurality of nonvolatile memory elements that vary randomly or pseudo-randomly in response to a received challenge value; and sense circuits configured to generate a response value based on the values of the selected nonvolatile memory elements. Related methods and systems are also disclosed.

Methods and systems include memory devices with a memory array comprising a plurality of memory cells. The memory devices include a control circuit operatively coupled to the memory array and configured to receive a read request for data and to apply a first voltage to the memory array based on the read request. The control circuit is additionally configured to count a total number of the plurality of memory cells that have switched to an active read state based on the first voltage and to apply a second voltage to the memory array based on the total number. The control circuit is further configured to return the data based at least on bits stored in a first and a second set of the plurality of memory cells.

A memory device is provided that includes at least one resistive memory cell, a negative capacitance field effect transistor (NC-FET) serving as a voltage amplifier, and a switch enable circuit connecting NC-FET to the memory cell. The NC-FET includes a regular FET having a metal gate terminal and a ferroelectric capacitor. The NC-FET gate terminal forms one plate of the ferroelectric (FE) capacitor. The ferroelectric capacitor includes a ferroelectric dielectric material deposited between a formed upper gate conductive contact and he metal gate terminal. To provide further flexibility, a metal layer can be deposited before the deposition of the ferroelectric material to form a MIM-like FE capacitor so that the capacitance of FE capacitance can be independently tuned by choosing the right height (H), width (W), and length (L) to achieve desired matching between |C.sub.FE| and C.sub.ox where C.sub.ox is the gate oxide capacitance and C.sub.FE is the ferroelectric capacitance.

The present invention is directed to binding molecules that possess one or more epitope-binding sites specific for an epitope of CD137 and one or more epitope-binding sites specific for an epitope of a tumor antigen (“TA”) (e.g., a “CD137×TA Binding Molecule”). In one embodiment, such CD137×TA Binding Molecules will be bispecific molecules, especially bispecific tetravalent diabodies, that are composed of two, three, four or more than four polypeptide chains and possessing two epitope-binding sites each specific for an epitope of CD137 and two epitope-binding sites each specific for an epitope of a TA. Alternatively, such CD137×TA Binding Molecules will be bispecific molecules, especially bispecific trivalent binding molecules composed of three or more polypeptide chains and possessing one or two epitope-binding sites each specific for an epitope of CD137 and one or two epitope-binding sites each specific for an epitope of a TA. The CD137×TA Binding Molecules of the invention are capable of simultaneous binding to CD137, and a TA. The invention is directed to pharmaceutical compositions that contain any such CD137×TA Binding Molecules. The invention is additionally directed to methods for the use of such molecules in the treatment of cancer and other diseases and conditions. The invention also provides novel CD137-binding molecules, and HER2/neu-binding molecules, as well as derivatives thereof and uses thereof.

Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.

An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.

According to one embodiment, a method, computer system, and computer program product for increasing linearity of a weight update of a phase change memory (PCM) cell is provided. The present invention may include applying a RESET pulse to amorphize the phase change material of the PCM cell; responsive to applying the RESET pulse, applying an incubation pulse to the PCM cell; and applying a plurality of partial SET pulses to incrementally increase the conductance of the PCM cell.

In a method for accessing memory cells, a first read operation is performed on a first memory cell to read a first data value from the first memory cell. During the first read operation, a first variable current source provides a first assessment current having a first current level to a first bitline coupled to the first memory cell. A second read operation is performed on the first memory cell to read a second data value from the first memory cell. During the second read operation, the first variable current source manipulates the first current level to provide a second current level to the first bitline. A difference between the first current level and the second current level is based on whether the first data value that was read during the first read operation was a first data state or a second data state.

A semiconductor memory device includes a plurality of semiconductor patterns extending in a first horizontal direction and separated from each other in a second horizontal direction and a vertical direction, each semiconductor pattern including a first source/drain area, a channel area, and a second source/drain area arranged in the first horizontal direction; a plurality of gate insulating layers covering upper surfaces or side surfaces of the channel areas; a plurality of word lines on the upper surfaces or the side surfaces of the channel areas; and a plurality of resistive switch units respectively connected to first sidewalls of the semiconductor patterns, extending in the first horizontal direction, and separated from each other in the second horizontal direction and the vertical direction, each resistive switch unit including a first electrode, a second electrode, and a resistive switch material layer between the first and second electrodes and including carbon nanotubes.