A system includes a volatile storage device, a read-only memory (ROM), a memory built-in self-test (BIST) controller and a central processing unit (CPU). The CPU, upon occurrence of a reset event, executes a first instruction from the ROM to cause the CPU to copy a plurality of instructions from a range of addresses in the ROM to the volatile storage device. The CPU also executes a second instruction from the ROM to change a program counter. The CPU further executes the plurality of instructions from the volatile storage device using the program counter. The CPU, when executing the plurality of instructions from the volatile storage device, causes the ROM to enter a test mode and the memory BIST controller to be configured to test the ROM.

The present application describes embodiments of an interface for coupling flash memory and dynamic random access memory (DRAM) in a processing system. Some embodiments include a dedicated interface between a flash memory and DRAM. The dedicated interface is to provide access to the flash memory in response to instructions received over a DRAM interface between the DRAM and a processing device. Some embodiments of a method include accessing a flash memory via a dedicated interface between the flash memory and a dynamic random access memory (DRAM) in response to an instruction received over a DRAM interface between the DRAM and a processing device.

A computer system with a small circuit area and reduced power consumption is used. The computer system includes a computer node including a processor and a three-dimensional NAND memory device. The three-dimensional NAND memory device includes a first string and a second string in different blocks. The first string includes a first memory cell, and the second string includes a second memory cell. On reception of first data and a signal including an instruction to write the first data, the controller writes the first data to the first memory cell. Then, the controller reads the first data from the first memory cell and writes the first data to the second memory cell. Thus, the computer node can eliminate a main memory such as a DRAM from the structure.

Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.

Technologies for switching network traffic include a network switch. The network switch includes one or more processors and communication circuitry coupled to the one or more processors. The communication circuitry is capable of switching network traffic of multiple link layer protocols. Additionally, the network switch includes one or more memory devices storing instructions that, when executed, cause the network switch to receive, with the communication circuitry through an optical connection, network traffic to be forwarded, and determine a link layer protocol of the received network traffic. The instructions additionally cause the network switch to forward the network traffic as a function of the determined link layer protocol. Other embodiments are also described and claimed.

Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.

Subject matter disclosed herein relates to management of a memory device.

Technologies for switching network traffic include a network switch. The network switch includes one or more processors and communication circuitry coupled to the one or more processors. The communication circuity is capable of switching network traffic of multiple link layer protocols. Additionally, the network switch includes one or more memory devices storing instructions that, when executed, cause the network switch to receive, with the communication circuitry through an optical connection, network traffic to be forwarded, and determine a link layer protocol of the received network traffic. The instructions additionally cause the network switch to forward the network traffic as a function of the determined link layer protocol. Other embodiments are also described and claimed.

Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.

An embodiment in the application may include an analog memory structure, and methods of writing to such a structure, including a volatile memory element in series with a non-volatile memory element. The analog memory structure may change resistance upon application of a voltage. This may enable accelerated writing of the analog memory structure.