A ternary content addressable memory (TCAM) semiconductor device includes a first and second data storage portions each connected to a bit line. The first data storage portion is connected to a first word line, and to a first and third group of in series transistors. The second data storage portion is connected to a second word line, and to a second and fourth group of in series transistors. The first group and second group of in series transistors are each connected to a first match line. The first group is connected to a first search line bar, and the second group is connected to a first search line. A third and fourth group of in series transistors are each connected to a second match line. The third group is connected to a second search line, and the fourth group is connected to a second search line bar.

A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.

Access control request parameter remapping may be implemented that supports user-configurable and host-configurable processing stages. A request may be received and evaluated to determine user-configured remapping is applied, host-configured remapping is applied or both user and host remapping applied. For applied remapping, an unmasked portion of a parameter of the access request may be replaced with a corresponding portion of a remap parameter.

Access control request parameter remapping may be implemented that supports user-configurable and host-configurable processing stages. A request may be received and evaluated to determine user-configured remapping is applied, host-configured remapping is applied or both user and host remapping applied. For applied remapping, an unmasked portion of a parameter of the access request may be replaced with a corresponding portion of a remap parameter.

A method to determine an extreme value of a plurality of data candidates includes storing each data candidate of a plurality of data candidates in a separate column of an associative memory, initializing a row of marker bits by setting each marker bit to a value of 1, computing a subsequent row of marker bits by performing in parallel a Boolean AND operation between a previous row of marker bits and a row of bits of the data candidates, starting with the row of most significant bits of the data candidates, performing a Boolean OR operation between the marker bits in the subsequent row of marker bits to generate a subsequent RSP value, identifying the extreme value from among the plurality of data candidates when there is only one marker bit having a value of 1 in the subsequent row of marker bits coinciding with when said subsequent RSP value is a 1, and if the identifying is false, repeating the computing on a row of next most significant bits, performing and identifying until the identifying is true.

A method to determine an extreme value of a plurality of data candidates includes storing each data candidate of a plurality of data candidates in a separate column of an associative memory, initializing a row of marker bits by setting each marker bit to a value of 1, computing a subsequent row of marker bits by performing in parallel a Boolean AND operation between a previous row of marker bits and a row of bits of the data candidates, starting with the row of most significant bits of the data candidates, performing a Boolean OR operation between the marker bits in the subsequent row of marker bits to generate a subsequent RSP value, identifying the extreme value from among the plurality of data candidates when there is only one marker bit having a value of 1 in the subsequent row of marker bits coinciding with when said subsequent RSP value is a 1, and if the identifying is false, repeating the computing on a row of next most significant bits, performing and identifying until the identifying is true.

Embodiments of the present invention are directed to a wildcard matching solution that uses a combination of static random access memories (SRAMs) and ternary content addressable memories (TCAMs) in a hybrid solution. In particular, the wildcard matching solution uses a plurality of SRAM pools for lookup and a spillover TCAM pool for unresolved hash conflicts.

Embodiments of the present invention are directed to a wildcard matching solution that uses a combination of static random access memories (SRAMs) and ternary content addressable memories (TCAMs) in a hybrid solution. In particular, the wildcard matching solution uses a plurality of SRAM pools for lookup and a spillover TCAM pool for unresolved hash conflicts.

A layout pattern of a two-port ternary content addressable memory (TCAM) includes a first storage unit, a second storage unit, a first comparison circuit and a second comparison circuit. The first comparison circuit and the second comparison circuit are positioned in a first side area of a side and a second side area of another side of the layout pattern, respectively. The first storage unit and the second storage unit are positioned in a first middle area and a second middle area between the first side area and the second side area, respectively. The first storage unit is connected to the first comparison circuit through a first gate structure and connected to the second comparison circuit through a second gate structure. The second storage unit is connected to the first comparison circuit through a third gate structure and connected to the second comparison circuit through a fourth gate structure.

A layout pattern of a two-port ternary content addressable memory (TCAM) includes a first storage unit, a second storage unit, a first comparison circuit and a second comparison circuit. The first comparison circuit and the second comparison circuit are positioned in a first side area of a side and a second side area of another side of the layout pattern, respectively. The first storage unit and the second storage unit are positioned in a first middle area and a second middle area between the first side area and the second side area, respectively. The first storage unit is connected to the first comparison circuit through a first gate structure and connected to the second comparison circuit through a second gate structure. The second storage unit is connected to the first comparison circuit through a third gate structure and connected to the second comparison circuit through a fourth gate structure.