A memory device includes a plurality of memory units and a global responder (RSP) unit. Each memory unit includes a memory array of memory cells arranged in rows and columns, and an RSP unit. The memory array receives horizontal input data rotated for storage as data candidates in columns of the array. At least one of the rows is a calculation row receiving per-bit-line Boolean AND operations between bits of a marker row and bits of a row of data of the data candidates. The RSP unit includes wired-OR circuitry operative on the calculation row to generate a responder signal indicating whether there is one cell in the calculation row having a predefined value identifying a data candidate in the memory array. The global RSP unit receives multiple responder signals, one from at least two of the RSP units, and performs Boolean OR operations on the multiple responder signals.

A memory device includes a plurality of memory units and a global responder (RSP) unit. Each memory unit includes a memory array of memory cells arranged in rows and columns, and an RSP unit. The memory array receives horizontal input data rotated for storage as data candidates in columns of the array. At least one of the rows is a calculation row receiving per-bit-line Boolean AND operations between bits of a marker row and bits of a row of data of the data candidates. The RSP unit includes wired-OR circuitry operative on the calculation row to generate a responder signal indicating whether there is one cell in the calculation row having a predefined value identifying a data candidate in the memory array. The global RSP unit receives multiple responder signals, one from at least two of the RSP units, and performs Boolean OR operations on the multiple responder signals.

Apparatus includes a plurality of memory cells (e.g., a dynamic random access memory (DRAM)) addressable as rows and columns and a plurality of matching circuits configured to be coupled to respective bit lines associated with the columns A control circuit is configured to store respective reference sequences (e.g., binary-encoded k-mer patterns) in respective ones of the columns, to sequentially provide rows of bits stored in the memory cells and bits of a query to the matching circuits, and to identify one of the reference sequences as corresponding to the query responsive to comparisons by the matching circuits.

The present invention discloses a memory device and operation method thereof. The operation method comprises: programming a plurality of first strings of a plurality of string pairs representing a finite state machine (FSM) to an in-memory-searching (IMS) array of a memory device; programming a plurality of second strings of the string pairs to a working memory of the memory device; and programming a string representing a starting state of the FSM to a buffer of the memory device.

The present invention discloses a memory device and operation method thereof. The operation method comprises: programming a plurality of first strings of a plurality of string pairs representing a finite state machine (FSM) to an in-memory-searching (IMS) array of a memory device; programming a plurality of second strings of the string pairs to a working memory of the memory device; and programming a string representing a starting state of the FSM to a buffer of the memory device.

A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a first set of signals representing the input search word and a second set of signals representing a second sequence of bits comprising an inverse of the first sequence of bits. The search pattern is provided as input to search lines of a content addressable memory (CAM) block. The search pattern causes at least one string in the CAM block to be conductive and provide a signal to a page buffer connected to the string in response to the input search word matching a data entry stored on the string. A location of the data entry is determined based on data read from the page buffer and the location is output.

A memory cell for an analog content-addressable memory is provided. The memory cell includes an N-type transistor, a P-type transistor, and a current control circuit. The gate of the N-type transistor is configured to receive a first input signal. The gate of the P-type transistor is configured to receive a second input signal. The current control circuit is coupled to at least one of the N-type transistor and the P-type transistor. The current control circuit is configured to generate at least one passing current. When the input voltages of the first input signal and the second input signal are within a matching range, the N-type transistor and the P-type transistor are turned on, and the passing current is substantially a fixed current value. The matching range is related to the threshold voltages of the N-type transistor and the P-type transistor, and the fixed current value.

A device for in memory vector-matrix multiplication includes a memory array and in-memory logic. The memory array has at least two sections and stores a multiplier matrix. The memory array also receives and stores an input multiplicand arranged in a vector such that the operands of the vector-matrix multiplication are located on a same column of the memory array. Each of the sections is one of: a volatile memory array, a non-volatile memory array, a destructive memory array and a non-destructive memory array. The in-memory logic computes an output of the vector-matrix multiplication using the stored input vector and the stored multiplier matrix. The memory array is one of the following type of memory array: RAM, DRAM, SRAM, Re-RAM, ZRAM, MRAM and Memristor.

A device for in memory vector-matrix multiplication includes a memory array and in-memory logic. The memory array has at least two sections and stores a multiplier matrix. The memory array also receives and stores an input multiplicand arranged in a vector such that the operands of the vector-matrix multiplication are located on a same column of the memory array. Each of the sections is one of: a volatile memory array, a non-volatile memory array, a destructive memory array and a non-destructive memory array. The in-memory logic computes an output of the vector-matrix multiplication using the stored input vector and the stored multiplier matrix. The memory array is one of the following type of memory array: RAM, DRAM, SRAM, Re-RAM, ZRAM, MRAM and Memristor.

System and method for using multiple global identification subnet prefix values in a network switch environment in a high performance computing environment. A packet is received from a network fabric by a first Host Channel Adapter (HCA). The packet has a header portion including a destination subnet prefix identifying a destination subnet of the network fabric. The network HCA is allowed to receive the first packet from a port of the network HCA by selectively determining a logical state of a flag and, selectively in accordance with a predetermined logical state of the flag, ignoring the destination subnet prefix identifying the destination subnet of the network fabric.