Methods and systems include memory devices with multiple memory cells configured to store data. The memory devices also include a cache configured to store at least a portion of the data to provide access to the at least the portion of the data without accessing the multiple memory cells. The memory devices also include control circuitry configured to receive a read command having a target address. Based on the target address, the control circuitry is configured to determine that the at least the portion of the data is present in the cache. Using the cache, the control circuitry also outputs read data from the cache without accessing the plurality of memory cells.

Methods and apparatus for software-assisted sparse memory. A processor including a memory controller is configured to implement one or more portions of the memory space for memory accessed via the memory controller as sparse memory regions. The amount of physical memory used for a sparse memory region is a fraction of the address range for the sparse memory region, where only non-zero data are written to the physical memory. Mechanisms are provided to detect memory access requests for memory in a sparse memory region and perform associated operations, while non-sparse memory access operations are performed when accessing memory that is not in a sparse memory region. Interfaces are provided to enable software to request allocation of a new sparse memory region or allocate sparse memory from an existing sparse memory region. Operations associated with access to sparse memory regions include detecting whether data for read and write request are all zeros.

An apparatus (e.g., a content addressable memory system) can have a controller, a first content addressable memory coupled to the controller, and a second content addressable memory coupled to the controller. The controller can be configured to cause the first content addressable memory to write data in the first content addressable memory, cause the second content addressable memory to write the data in the second content addressable memory, and cause the second content addressable memory to query the data written in the second content addressable memory while the first content addressable memory continues to write the data in the first content addressable memory.

A CAM array of compare memory cell circuits includes a decode column corresponding to each set, and each set includes at least one row of the compare memory cell circuits. Each decode column receives a set clock signal addressing the corresponding set and generates a set match signal in each row of the corresponding set. A column compare circuit generates compare data indicating a bit of a compare tag. A row match circuit generates, for each row, in response to the set match signal, a row match signal indicating the compare tag matches the binary tag stored in the row. Circuits and loads in a decode column employed to generate the set clock signal correspond to circuits generating the row match signal in each column of the CAM array to reduce a timing margin of the match indication and decrease the access time for the CAM array.

A ternary content addressable memory and a memory cell thereof are provided. The ternary content addressable memory cell includes a first transistor and a second transistor. The first transistor has a gate to receive a selection signal. A first end of the first transistor is coupled to a match line. A second end of the first transistor is coupled to a source line. The second transistor has a gate to receive an inverted selection signal. A first end of the second transistor is coupled to the match line. A second end of the second transistor is coupled to the source line. The first and second transistors have charge storage structures.

The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry is configured to perform a logical operation using a data value stored in a first memory cell coupled to a sense line as a first input and a data value stored in a second memory cell coupled to the sense line as a second input. The sensing circuitry is configured to perform the logical operation without transferring data via a sense line address access.

The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry is configured to perform a logical operation using a data value stored in a first memory cell coupled to a sense line as a first input and a data value stored in a second memory cell coupled to the sense line as a second input. The sensing circuitry is configured to perform the logical operation without transferring data via a sense line address access.

Circuitry is provided that includes programmable fabric with fine-grain routing wires and a separate programmable coarse-grain routing network that provides enhanced bandwidth, low latency, and deterministic routing behavior. The programmable fabric may be implemented on a top die that is stacked on the active interposer die. The programmable coarse-grain routing network and smart memory circuitry may be implemented on an active interposer die. the smart memory circuitry may be configured to perform higher level functions than simple read and write operations. The smart memory circuitry may carry out command based low cycle count operations using a state machine without requiring execution of a program code, complex microcontroller based multicycle operations, and other non-generic microcontroller based smart RAM functions.

Circuitry is provided that includes programmable fabric with fine-grain routing wires and a separate programmable coarse-grain routing network that provides enhanced bandwidth, low latency, and deterministic routing behavior. The programmable fabric may be implemented on a top die that is stacked on the active interposer die. The programmable coarse-grain routing network and smart memory circuitry may be implemented on an active interposer die. the smart memory circuitry may be configured to perform higher level functions than simple read and write operations. The smart memory circuitry may carry out command based low cycle count operations using a state machine without requiring execution of a program code, complex microcontroller based multicycle operations, and other non-generic microcontroller based smart RAM functions.

A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a first set of signals representing the input search word and a second set of signals representing a second sequence of bits comprising an inverse of the first sequence of bits. The search pattern is provided as input to search lines of a content addressable memory (CAM) block. The search pattern causes at least one string in the CAM block to be conductive and provide a signal to a page buffer connected to the string in response to the input search word matching a data entry stored on the string. A location of the data entry is determined based on data read from the page buffer and the location is output.