A search circuit includes a content-addressable memory (CAM) including a plurality of CAM cells configured to store a plurality of entry data, each entry data including a first bit corresponding to a least significant bit through a K-th bit corresponding to a most significant bit, the CAM configured to provide a plurality of matching signals indicating whether each of the plurality of entry data matches searching data, and a CAM controller configured to perform a partial searching operation such that the CAM controller applies comparison bits corresponding to a portion of the first through K-th bits as the searching data to the CAM and searches for target entry data among the plurality of entry data based on the plurality of matching signals indicating that the corresponding bits of the target entry data match the comparison bits.

A search circuit includes a content-addressable memory (CAM) including a plurality of CAM cells configured to store a plurality of entry data, each entry data including a first bit corresponding to a least significant bit through a K-th bit corresponding to a most significant bit, the CAM configured to provide a plurality of matching signals indicating whether each of the plurality of entry data matches searching data, and a CAM controller configured to perform a partial searching operation such that the CAM controller applies comparison bits corresponding to a portion of the first through K-th bits as the searching data to the CAM and searches for target entry data among the plurality of entry data based on the plurality of matching signals indicating that the corresponding bits of the target entry data match the comparison bits.

Disclosed are various embodiments related to stacked memory devices, such as DRAMs, SRAMs, EEPROMs, ReRAMs, and CAMs. For example, stack position identifiers (SPIDs) are assigned or otherwise determined, and are used by each memory device to make a number of adjustments. In one embodiment, a self-refresh rate of a DRAM is adjusted based on the SPID of that device. In another embodiment, a latency of a DRAM or SRAM is adjusted based on the SPID. In another embodiment, internal regulation signals are shared with other devices via TSVs. In another embodiment, adjustments to internally regulated signals are made based on the SPID of a particular device. In another embodiment, serially connected signals can be controlled based on a chip SPID (e.g., an even or odd stack position), and whether the signal is an upstream or a downstream type of signal.

Disclosed are various embodiments related to stacked memory devices, such as DRAMs, SRAMs, EEPROMs, ReRAMs, and CAMs. For example, stack position identifiers (SPIDs) are assigned or otherwise determined, and are used by each memory device to make a number of adjustments. In one embodiment, a self-refresh rate of a DRAM is adjusted based on the SPID of that device. In another embodiment, a latency of a DRAM or SRAM is adjusted based on the SPID. In another embodiment, internal regulation signals are shared with other devices via TSVs. In another embodiment, adjustments to internally regulated signals are made based on the SPID of a particular device. In another embodiment, serially connected signals can be controlled based on a chip SPID (e.g., an even or odd stack position), and whether the signal is an upstream or a downstream type of signal.

The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry is configured to perform a logical operation using a data value stored in a first memory cell coupled to a sense line as a first input and a data value stored in a second memory cell coupled to the sense line as a second input. The sensing circuitry is configured to perform the logical operation without transferring data via a sense line address access.

An apparatus (e.g., a content addressable memory system) can have a controller, a first content addressable memory coupled to the controller, and a second content addressable memory coupled to the controller. The controller can be configured to cause the first content addressable memory to write data in the first content addressable memory, cause the second content addressable memory to write the data in the second content addressable memory, and cause the second content addressable memory to query the data written in the second content addressable memory while the first content addressable memory continues to write the data in the first content addressable memory.

A memory device comprises a block of ranged content-addressable memory (RCAM) including multiple RCAM memory elements, wherein each RCAM memory element is accessed by content that includes two values; a search register configured to store a search value; and logic circuitry coupled to the multiple content-addressable memory elements and the search register. The logic circuitry is configured to: compare the search value of the search register to the two values of each of the multiple RCAM memory elements in parallel; and identify an RCAM memory element according to the comparison.

A memory device comprises a block of ranged content-addressable memory (RCAM) including multiple RCAM memory elements, wherein each RCAM memory element is accessed by content that includes two values; a search register configured to store a search value; and logic circuitry coupled to the multiple content-addressable memory elements and the search register. The logic circuitry is configured to: compare the search value of the search register to the two values of each of the multiple RCAM memory elements in parallel; and identify an RCAM memory element according to the comparison.

A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a first set of signals representing the input search word and a second set of signals representing a second sequence of bits comprising an inverse of the first sequence of bits. The search pattern is provided as input to search lines of a content addressable memory (CAM) block. The search pattern causes at least one string in the CAM block to be conductive and provide a signal to a page buffer connected to the string in response to the input search word matching a data entry stored on the string. A location of the data entry is determined based on data read from the page buffer and the location is output.

A method for an associative memory array includes storing each column of a matrix in an associated column of the associative memory array, where each bit in row j of the matrix is stored in row R-matrix-row-j of the array, storing a vector in each associated column, where a bit j from the vector is stored in an R-vector-bit-j row of the array. The method includes simultaneously activating a vector-matrix pair of rows R-vector-bit-j and R-matrix-row-j to concurrently receive a result of a Boolean function on all associated columns, using the results to calculate a product between the vector-matrix pair of rows, and writing the product to an R-product-j row in the array.