According to one embodiment, a semiconductor memory device includes: first and second select transistors; first and second select gate lines; first and second interconnects; first and second memory cell transistors; and first and second word lines. In a write operation, after execution of a verify operation, in a period in which the second select transistor is ON, a voltage of the first word line changes from a first voltage to a second voltage and a voltage of the second word line changes from a third voltage applied in the verify operation to a fourth voltage, and after the voltage of the first word line changes to the second voltage and the voltage of the second word line changes to the fourth voltage, a voltage of the second select gate line changes from a fifth voltage to a sixth voltage.

A semiconductor memory cell comprising an electrically floating body. A method of operating the memory cell is provided.

A semiconductor memory cell comprising an electrically floating body. A method of operating the memory cell is provided.

Techniques for encoding data for non-volatile memory storage systems are disclosed. In one particular embodiment, the techniques may be realized as a method including writing first data to the memory, reading the first data from the memory, analyzing the first read data such that the analyzing includes determining whether the read data includes an error, encoding second data based on the analyzing of the first data such that the second data is encoded to be written to a position adjacent to the error when it is determined that the read data includes the error, and writing the encoded second data to the memory at the position.

A method of erasing vertical NAND strings from a source side of the vertical NAND strings includes applying a relatively high erase voltage to a source line, applying a relatively low voltage or 0 V to bit lines, applying a first drain-select-level voltage that is less than the erase voltage to one of the first drain-select-level electrically conductive layers, and applying a second drain-select-level voltage that is greater than the first drain-select-level voltage and not greater than the erase voltage to one of the second drain-select-level electrically conductive layers.

Apparatuses, systems, methods, and computer program products are disclosed for state-dependent read compensation. A set of non-volatile storage cells comprising a plurality of word lines. A controller is configured to perform a read operation on one or more word lines adjacent to a target word line. A controller is configured to determine a read setting for application to a target word line based on a result of a read operation on one or more word lines adjacent to the target word line. A controller is configured to perform a read operation on a target word line using a determined read setting.

An EPROM device includes bit lines branching from a supply voltage line, a first group of enablement signal lines intersecting the bit lines, unit cells respectively located at cross points of the bit lines and the first group of enablement signal lines, pass transistors, load transistors, comparators, and enablement signal generators. One of the pass transistors and one of the load transistors are coupled in series between the supply voltage line and each of the bit lines. Each of the comparators receives voltages of both ends of any one of the load transistors to generate an output signal. Each of the enablement signal generators receives one of the output signals of the comparators and one of a second group of enablement signals and outputs one of a third group of enablement signals to turn off one of the pass transistors responsive to a program current reaching a reference value.

The present invention relates to a flash memory cell with only four terminals and a high voltage row decoder for operating an array of such flash memory cells. The invention allows for fewer terminals for each flash memory cell compared to the prior art, which results in a simplification of the decoder circuitry and overall die space required per flash memory cells. The invention also provides for the use of high voltages on one or more of the four terminals to allow for read, erase, and programming operations despite the lower number of terminals compared to prior art flash memory cells.

According to one embodiment, a memory system includes a nonvolatile memory, a command managing unit, a command issuing unit, a data control unit and a command monitoring unit. The command issuing unit issues a command received by the command managing unit to the nonvolatile memory. The data control unit controls a reading or writing of data to the nonvolatile memory. The command monitoring unit monitors the command managing unit and outputs a receipt signal to the data control unit when the command managing unit receives the command. The data control unit interrupts the reading or writing when receiving the receipt signal, issues the command from the command issuing unit to the nonvolatile memory, and resumes the reading or writing after issuing the command.

According to one embodiment, a memory system includes a nonvolatile memory, a command managing unit, a command issuing unit, a data control unit and a command monitoring unit. The command issuing unit issues a command received by the command managing unit to the nonvolatile memory. The data control unit controls a reading or writing of data to the nonvolatile memory. The command monitoring unit monitors the command managing unit and outputs a receipt signal to the data control unit when the command managing unit receives the command. The data control unit interrupts the reading or writing when receiving the receipt signal, issues the command from the command issuing unit to the nonvolatile memory, and resumes the reading or writing after issuing the command.