G11C19/00

System and method to manage power throttling

A power throttling engine includes a register configured to receive a power throttling signal. The power throttling engine further includes a decoder configured to generate a vector based on a value of the power throttling signal. The value of the power throttling signal is an amount of power throttling of a device. The power throttling engine further includes a clock gating logic configured to receive the vector and further configured to receive a clocking signal. The clock gating logic is configured to remove clock edges of the clocking signal based on the vector to generate a throttled clocking signal.

METHOD AND DEVICE FOR CLOCK GENERATION AND SYNCHRONIZATION FOR TIME INTERLEAVED NETWORKS
20220155813 · 2022-05-19 ·

A multi-layer time-interleaving (TI) device and method of operation therefor. This device includes a plurality of TI layers configured to receive a plurality of input clock signals and to output a plurality of output clock signals, each of which can be configured to drive subsequent devices. The layers include at least a first and second layer including a fine-grain propagation device and a barrel-shifting propagation device configured to retime the plurality of input clock signals to produce divided output clock signals. The device can include additional barrel-shifting propagation devices to time interleave an initial two layers to produce one or more additional layers. Using negative phase stepping, the plurality of output clock signals is produced with optimal timing margin and synchronized on a single clock edge.

CFAR OS DETECTION HARDWARE

A system includes a shift register to store data samples, where the shift register includes a cell under test (CUT), a left guard cell, a right guard cell, a left window, and a right window. The system includes two sets of comparators to compare incoming data samples with data samples in the left window and the right window to compute ranks of the incoming data samples. The system includes a sorted index array to store a rank of the data samples in the shift register. The system includes a selector to select a Kth smallest index from the sorted index array and its corresponding data sample from the shift register. The system includes a target comparator, where the first comparator input receives a data sample from the CUT and the second comparator input receives a Kth smallest data sample, and the comparator output indicates a CFAR target detection.

ELECTRONIC DEVICE AND SCAN DRIVING CIRCUIT
20220148482 · 2022-05-12 · ·

An electronic device and a scan driving circuit each including a shift register and a demultiplexer are provided. The demultiplexer is electrically connected to the shift register. The demultiplexer includes at least one scan unit. The at least one scan unit includes a switch circuit and a buffer. An input terminal of the buffer is electrically connected to the switch circuit. An output terminal of the buffer is electrically connected to a scan line.

Shift register circuit and drive method thereof, gate drive circuit, and display panel

The present disclosure relates to a shift register circuit and a drive method thereof, a gate drive circuit, and a display panel. The shift register circuit comprises a second reset circuit, and a reset operation is performed for a first node and a signal output terminal by the second reset circuit during an off stage of the display panel.

Shift register, gate driving circuit and gate driving method

Shift register includes signal writing circuit, voltage control circuit and output circuit. The signal writing circuit is configured to write inverted signal of input signal provided by signal input terminal into second node responsive to control of second clock signal provided by second clock signal terminal. The voltage control circuit is configured to write first operating voltage into first node and write second clock signal into third node in voltage control circuit in response to control of voltage at first node, write second operating voltage into third node in response to control of second clock signal and write first clock signal provided by first clock signal terminal into first node in response to control of voltage at third node and first clock signal. The output circuit is configured to write second or first operating voltage into signal output terminal in response to control of voltage at first or second node.

Gate driving circuit and display device having the same

A gate driving circuit including a controller for providing a first carry signal to a control node, a first pull-up portion for outputting a first clock signal as a first gate signal in accordance with a signal provided to the control node, and a second pull-up portion for outputting a second clock signal with a phase that is different from the first clock signal as a second gate signal in accordance with the signal provided to the control node.

Gate driver and display panel having the same

A display panel includes pixels connected to gate lines, and a gate driver that supplies a gate signal to at least one of the gate lines and includes a plurality of stages. Each stage includes a pull-up transistor to apply a turn-on voltage of a first clock signal to an output terminal responsive to a voltage at a Q-node, a pull-down transistor to apply a turn-off voltage to the output terminal responsive to a voltage at a QB-node that holds the turn-on voltage during a period in which the output terminal is applied the turn-off voltage, and a QB-node control unit to apply the turn-on voltage to the QB-node responsive to the first clock signal and a second clock signal in reverse-phase with the first clock signal. Accordingly, a display panel may include a gate driver that can set, reset, and hold the voltage at a QB-node.

SEMICONDUCTOR DEVICE
20230246039 · 2023-08-03 ·

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

SEMICONDUCTOR DEVICE
20230246039 · 2023-08-03 ·

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.