G11C21/00

System and method for managing data in a ring buffer

A system and method for managing data in a ring buffer is disclosed. The system includes a legacy ring buffer functioning as an on-chip ring buffer, a supplemental buffer for storing data in the ring buffer, a preload ring buffer that is on-chip and capable of receiving preload data from the supplemental buffer, a write controller that determines where to write data that is write requested by a write client of the ring buffer, and a read controller that controls a return of data to a read client pursuant to a read request to the ring buffer.

MEMORY START VOLTAGE MANAGEMENT
20200005870 · 2020-01-02 ·

A system includes a memory device storing a set of start voltage values, wherein the set of start voltage values each represent voltage levels used to initially store charges in performing operations to corresponding one or more memory locations of the memory device; and a processing device, operatively coupled to the memory device, to: determine whether a quantity of start voltage values in the set of start voltage values stored in the memory device meets a threshold; modify the set of start voltage values stored in the memory device to remove one or more start voltage values from the set in response to a determination that the quantity of start voltage values in the set meets the threshold; and add a new start voltage value to the modified set of start voltage values.

Packet routing between memory devices and related apparatuses, methods, and memory systems
11947798 · 2024-04-02 · ·

Packet routing between memory devices and related apparatuses, methods, and memory systems are disclosed. An apparatus of a memory device includes a memory controller, two or more memory interfaces, packet relay logic configured to control the two or more memory interfaces, and a switch. The switch is configured to pass a received packet received through a first memory interface of the two or more memory interfaces to the memory controller responsive to a determination that the received packet indicates the memory device as a destination of the received packet. The switch is also configured to pass the received packet through a second memory interface of the two or more memory interfaces toward an other memory device responsive to a determination that the received packet indicates the other memory device as the destination of the received packet.

Packet routing between memory devices and related apparatuses, methods, and memory systems
11947798 · 2024-04-02 · ·

Packet routing between memory devices and related apparatuses, methods, and memory systems are disclosed. An apparatus of a memory device includes a memory controller, two or more memory interfaces, packet relay logic configured to control the two or more memory interfaces, and a switch. The switch is configured to pass a received packet received through a first memory interface of the two or more memory interfaces to the memory controller responsive to a determination that the received packet indicates the memory device as a destination of the received packet. The switch is also configured to pass the received packet through a second memory interface of the two or more memory interfaces toward an other memory device responsive to a determination that the received packet indicates the other memory device as the destination of the received packet.

Memory start voltage management

A system includes a memory device storing a set of start voltage values, wherein the set of start voltage values each represent voltage levels used to initially store charges in performing operations to corresponding one or more memory locations of the memory device; and a processing device, operatively coupled to the memory device, to: determine whether a quantity of start voltage values in the set of start voltage values stored in the memory device meets a threshold; modify the set of start voltage values stored in the memory device to remove one or more start voltage values from the set in response to a determination that the quantity of start voltage values in the set meets the threshold; and add a new start voltage value to the modified set of start voltage values.

MEMORY START VOLTAGE MANAGEMENT
20190333582 · 2019-10-31 ·

A system includes a memory device storing a set of start voltage values, wherein the set of start voltage values each represent voltage levels used to initially store charges in performing operations to corresponding one or more memory locations of the memory device; and a processing device, operatively coupled to the memory device, to: determine whether a quantity of start voltage values in the set of start voltage values stored in the memory device meets a threshold; modify the set of start voltage values stored in the memory device to remove one or more start voltage values from the set in response to a determination that the quantity of start voltage values in the set meets the threshold; and add a new start voltage value to the modified set of start voltage values.

MEMORY COMPONENT WITH PATTERN REGISTER CIRCUITRY TO PROVIDE DATA PATTERNS FOR CALIBRATION

A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration.

MEMORY COMPONENT WITH PATTERN REGISTER CIRCUITRY TO PROVIDE DATA PATTERNS FOR CALIBRATION

A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration.

MODULAR DEVICE AND METHOD OF OPERATION
20190182314 · 2019-06-13 ·

A modular system including a set of functionality tiles and a control tile storing a storage structure, an initialization file, and operation instructions. The method for operating a custom device made using the modular system includes: sending operation settings for each tile to the respective tile upon device initialization; operating each tile based on the operation settings; writing the output from each tile to the storage structure; monitoring data streams within the storage structure for a trigger event; reading data off the storage structure in response to occurrence of the trigger event; and processing the read data according to a processing function specified by the operation instructions.

MODULAR DEVICE AND METHOD OF OPERATION
20190182314 · 2019-06-13 ·

A modular system including a set of functionality tiles and a control tile storing a storage structure, an initialization file, and operation instructions. The method for operating a custom device made using the modular system includes: sending operation settings for each tile to the respective tile upon device initialization; operating each tile based on the operation settings; writing the output from each tile to the storage structure; monitoring data streams within the storage structure for a trigger event; reading data off the storage structure in response to occurrence of the trigger event; and processing the read data according to a processing function specified by the operation instructions.