A hybrid Micro-Electro-Mechanical-System-Floating-Gate (MEMS-FG) device includes an electrically isolated non-volatile memory (floating) structure including a polysilicon gate structure connected by a metal via to a fixed electrode, where the polysilicon gate structure also forms the gate of an NVM cell, and the fixed electrode forms part of a lever-type or membrane-type ohmic MEMS switch. An initial charge is written before each sensing operation onto the floating structure by way of the NVM cell. During each sensing operation, sensor data is effectively written directly onto the NVM cell by way of either maintaining or discharging the initial charge, where discharge of the initial charge occurs when a predetermined event (e.g., contact by a fingerprint ridge) produces an actuating force that biases a movable electrode of the MEMS switch against the fixed electrode. The sensor data is read out from the NVM cell after each sensing operation.

A hybrid Micro-Electro-Mechanical-System-Floating-Gate (MEMS-FG) device includes an electrically isolated non-volatile memory (floating) structure including a polysilicon gate structure connected by a metal via to a fixed electrode, where the polysilicon gate structure also forms the gate of an NVM cell, and the fixed electrode forms part of a lever-type or membrane-type ohmic MEMS switch. An initial charge is written before each sensing operation onto the floating structure by way of the NVM cell. During each sensing operation, sensor data is effectively written directly onto the NVM cell by way of either maintaining or discharging the initial charge, where discharge of the initial charge occurs when a predetermined event (e.g., contact by a fingerprint ridge) produces an actuating force that biases a movable electrode of the MEMS switch against the fixed electrode. The sensor data is read out from the NVM cell after each sensing operation.

A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

A data storage cell for storing data is disclosed. In one aspect, the data storage cell comprises a first nano electromechanical switch comprising a first moveable beam fixed to a first anchor, a first control gate and a second control gate, a first output node against which the first moveable beam can be positioned. The data storage cell also comprises a second nano electromechanical switch comprising a second moveable beam fixed to a second anchor, a third control gate and a fourth control gate. The second moveable beam can be positioned against the first output node. Further, the first nano electromechanical switch and the second nano electromechanical switch are configured for selecting a first or a second state of the data storage cell and are configured for having their moveable beam complementary positioned to the first output node. A memory arrangement of such data storage cells is also disclosed, as well as methods for writing data to the data storage cells and for reading data from the data storage cells.

A data storage cell for storing data is disclosed. In one aspect, the data storage cell comprises a first nano electromechanical switch comprising a first moveable beam fixed to a first anchor, a first control gate and a second control gate, a first output node against which the first moveable beam can be positioned. The data storage cell also comprises a second nano electromechanical switch comprising a second moveable beam fixed to a second anchor, a third control gate and a fourth control gate. The second moveable beam can be positioned against the first output node. Further, the first nano electromechanical switch and the second nano electromechanical switch are configured for selecting a first or a second state of the data storage cell and are configured for having their moveable beam complementary positioned to the first output node. A memory arrangement of such data storage cells is also disclosed, as well as methods for writing data to the data storage cells and for reading data from the data storage cells.

A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.