Embodiments of the disclosure provide a system, method, or computer readable medium for programming a target analog voltage range of an analog content addressable memory (aCAM) row. The method may comprise calculating a threshold current sufficient to switch a sense amplifier (SA) on and discharge a match line (ML) connected to a cell of the aCAM; and based on calculating the threshold current, programming a match threshold value by setting a memristor conductance in association with the target analog voltage range applied to a data line (DL) input. The target analog voltage range may comprise a target analog voltage range vector.

Memory cells and methods of forming and operating the same include forming a doped crystalline semiconductor memory layer on a first electrode. The doped crystalline semiconductor memory layer has a programmable dopant activation level that determines a resistance of the doped crystalline semiconductor memory layer. A second electrode is formed on the doped crystalline semiconductor memory layer.

An apparatus includes an analog phase change memory array, including an array of cells addressable and accessible through first lines and second lines. The apparatus includes device(s) coupled to one or more of the first lines. The device(s) is/are able to be coupled to or decoupled from the one or more first lines to compensate for phase change memory resistance drift in resistance of at least one of the cells in the one or more first lines. The apparatus may also include control circuitry configured to send, using the first lines and second lines, a same set pulse through the device(s) to multiple individual phase change memory resistors in the phase change memory array sequentially once every period.

Embodiments of the disclosure provide a system, method, or computer readable medium for programming a target analog voltage range of an analog content addressable memory (aCAM) row. The method may comprise calculating a threshold current sufficient to switch a sense amplifier (SA) on and discharge a match line (ML) connected to a cell of the aCAM; and based on calculating the threshold current, programming a match threshold value by setting a memristor conductance in association with the target analog voltage range applied to a data line (DL) input. The target analog voltage range may comprise a target analog voltage range vector.

Optimized synapses for neuromorphic arrays are provided. In various embodiments, first and second single-transistor current sources are electrically coupled in series. The first single-transistor current source is electrically coupled to both a first control circuit and second control circuit, free of any intervening logic gate between the first single-transistor current source and either one of the control circuits. The second single-transistor current source is electrically coupled to both the first control circuit and the second control circuit, free of any intervening logic gate between the second single-transistor current source and either one of the control circuits. A capacitor is electrically coupled to the first and second single-transistor current sources. A read circuit is electrically coupled to the capacitor. The first and second single-transistor current sources are adapted to charge the capacitor only when concurrently receiving a control signal from both the first and second control circuits. The first and second single-transistor current sources are adapted to discharge the capacitor only when concurrently receiving a control signal from both the first and second control circuit.

Optimized synapses for neuromorphic arrays are provided. In various embodiments, first and second single-transistor current sources are electrically coupled in series. The first single-transistor current source is electrically coupled to both a first control circuit and second control circuit, free of any intervening logic gate between the first single-transistor current source and either one of the control circuits. The second single-transistor current source is electrically coupled to both the first control circuit and the second control circuit, free of any intervening logic gate between the second single-transistor current source and either one of the control circuits. A capacitor is electrically coupled to the first and second single-transistor current sources. A read circuit is electrically coupled to the capacitor. The first and second single-transistor current sources are adapted to charge the capacitor only when concurrently receiving a control signal from both the first and second control circuits. The first and second single-transistor current sources are adapted to discharge the capacitor only when concurrently receiving a control signal from both the first and second control circuit.

Encoding of domain logic rules in an analog content addressable memory (aCAM) is disclosed. By encoding domain logic in an aCAM, rapid and flexible search capabilities are enabled, including the capability to search ranges of analog values, fuzzy match capabilities, and optimized parameter search capabilities. This is achieved with low latency by using only a small number of clock cycles at low power. A domain logic ruleset may be represented using various data structures such as decision trees, directed graphs, or the like. These representations can be converted to a table of values, where each table column can be directly mapped to a corresponding row of the aCAM.

Encoding of domain logic rules in an analog content addressable memory (aCAM) is disclosed. By encoding domain logic in an aCAM, rapid and flexible search capabilities are enabled, including the capability to search ranges of analog values, fuzzy match capabilities, and optimized parameter search capabilities. This is achieved with low latency by using only a small number of clock cycles at low power. A domain logic ruleset may be represented using various data structures such as decision trees, directed graphs, or the like. These representations can be converted to a table of values, where each table column can be directly mapped to a corresponding row of the aCAM.

Techniques are provided for programming a multi-level self-selecting memory cell that includes a chalcogenide material. To program one or more intermediate memory states to the self-selecting memory cell, a programming pulse sequence that includes two pulses may be used. A first pulse of the programming pulse sequence may have a first polarity and a first magnitude and the second pulse of the programming pulse sequence may have a second polarity different than the first polarity and a second magnitude different than the first magnitude. After applying both pulses in the programming pulse sequence, the self-selecting memory cell may store an intermediate state that represents two bits of data (e.g., a logic ‘01’ or a logic ‘10’).

A semiconductor device includes a cell array, a computation circuit, and a control circuit. The cell array includes a plurality of unit cells configured to store a plurality of first signals by a write operation and to output a plurality of output signals corresponding to the first signals by a read operation. The computation circuit includes a plurality of unit computation circuits receiving the plurality of output signals and being set according to a plurality of second signals during a computation operation. The control circuit is configured to control the cell array and the computation circuit during the write operation, the read operation, and the computation operation.